Yongqing Li (李永庆)
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Gate-voltage tuning of chemical potential and weak antilocalization in Bi2Se3
LL J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R ...
Physical Review Letters 105, 176602, 2010
A synaptic transistor based on quasi‐2D molybdenum oxide
CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun
Advanced Materials 29 (27), 1700906, 2017
All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing
CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ...
Advanced Functional Materials 28 (42), 1804170, 2018
Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport
YL J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet
Physical Review B 83, 241304 (R), 2011
Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large tunability in chemical potential
G Zhang, H Qin, J Chen, X He, L Lu, Y Li, K Wu
Advanced Functional Materials 21 (12), 2351-2355, 2011
Highly tunable electron transport in epitaxial topological insulator (Bi1-xSbx)2Te3 thin films
KW X. Y. He, T. Guan, X. X. Wang, B.J. Feng, P. Cheng, L. Chen, Yongqing Li
Applied Physics Letters 101, 123111, 2012
Transport in two-dimensional topological materials: recent developments in experiment and theory
D Culcer, AC Keser, Y Li, G Tkachov
2D Materials 7 (2), 022007, 2020
Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators
YL Jian Liao, Yunbo Ou, Xiao Feng, Shuo Yang, Chaojing Lin, Wenmin Yang ...
Physical Review Letters 114, 216601, 2015
Hall magnetometry on a single iron nanoparticle
HO Yongqing Li, P. Xiong, S. von Molnár, S. Wirth, Y. Ohno
Applied Physics Letters 80, 4644, 2002
Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal
D Wu, J Liao, W Yi, X Wang, P Li, H Weng, Y Shi, Y Li, J Luo, X Dai, ...
Applied Physics Letters 108 (4), 2016
Thickness dependence of the quantum anomalous Hall effect in magnetic topological insulator films
X Feng, Y Feng, J Wang, Y Ou, Z Hao, C Liu, Z Zhang, L Zhang, C Lin, ...
Advanced Materials 28 (30), 6386-6390, 2016
Parallel field magnetoresistance in topological insulator thin films
YL C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T ...
Physical Revfiew B 88, 041307 (R), 2013
Evidence for Half-Metallicity in n-type HgCr2Se4
PX Tong Guan, Chaojing Lin, Chongli Yang, Youguo Shi, Cong Ren, Yongqing Li ...
Physical Review Letters 115, 087002, 2015
Cavity enhanced Faraday rotation of semiconductor quantum dots
DDA Yongqing Li, D. W. Steuerman, J. Berezovsky, D. S. Seferos, G. C. Bazan
Applied Physics Letters 88, 193126, 2006
Large negative magnetoresistance of a nearly Dirac material: Layered antimonide
C Yi, S Yang, M Yang, L Wang, Y Matsushita, S Miao, Y Jiao, J Cheng, ...
Physical Review B 96 (20), 205103, 2017
Linear and nonlinear two-terminal spin-valve effect from chirality-induced spin selectivity
T Liu, X Wang, H Wang, G Shi, F Gao, H Feng, H Deng, L Hu, E Lochner, ...
ACS nano 14 (11), 15983-15991, 2020
Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity
PX Tianhan Liu, Xiaolei Wang, Hailong Wang, Gang Shi, Fan Gao, Honglei Feng ...
ACS Nano 14 (11), 15983–15991, 2020
Enhanced electron dephasing in three-dimensional topological insulators
J Liao, Y Ou, H Liu, K He, X Ma, QK Xue, Y Li
Nature Communications 8, 16071, 2017
Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy
YL W. M. Yang, S. Yang, Q. H. Zhang, Y. Xu, S. P. Shen, J. Liao, J. Teng, C ...
Applied Physics Letters 105, 092411, 2014
Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating
HO Yongqing Li, C. Ren, P. Xiong, S. von Molnár, Y. Ohno
Physical Review Letters 93, 246602, 2004
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