Gate-voltage tuning of chemical potential and weak antilocalization in Bi2Se3 LL J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R ... Physical Review Letters 105, 176602, 2010 | 757* | 2010 |
A synaptic transistor based on quasi‐2D molybdenum oxide CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun Advanced Materials 29 (27), 1700906, 2017 | 330 | 2017 |
All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ... Advanced Functional Materials 28 (42), 1804170, 2018 | 320 | 2018 |
Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport YL J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet Physical Review B 83, 241304 (R), 2011 | 288 | 2011 |
Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large tunability in chemical potential G Zhang, H Qin, J Chen, X He, L Lu, Y Li, K Wu Advanced Functional Materials 21 (12), 2351-2355, 2011 | 145 | 2011 |
Highly tunable electron transport in epitaxial topological insulator (Bi1-xSbx)2Te3 thin films KW X. Y. He, T. Guan, X. X. Wang, B.J. Feng, P. Cheng, L. Chen, Yongqing Li Applied Physics Letters 101, 123111, 2012 | 98 | 2012 |
Transport in two-dimensional topological materials: recent developments in experiment and theory D Culcer, AC Keser, Y Li, G Tkachov 2D Materials 7 (2), 022007, 2020 | 91 | 2020 |
Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators YL Jian Liao, Yunbo Ou, Xiao Feng, Shuo Yang, Chaojing Lin, Wenmin Yang ... Physical Review Letters 114, 216601, 2015 | 91 | 2015 |
Hall magnetometry on a single iron nanoparticle HO Yongqing Li, P. Xiong, S. von Molnár, S. Wirth, Y. Ohno Applied Physics Letters 80, 4644, 2002 | 91 | 2002 |
Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal D Wu, J Liao, W Yi, X Wang, P Li, H Weng, Y Shi, Y Li, J Luo, X Dai, ... Applied Physics Letters 108 (4), 2016 | 80 | 2016 |
Thickness dependence of the quantum anomalous Hall effect in magnetic topological insulator films X Feng, Y Feng, J Wang, Y Ou, Z Hao, C Liu, Z Zhang, L Zhang, C Lin, ... Advanced Materials 28 (30), 6386-6390, 2016 | 79 | 2016 |
Parallel field magnetoresistance in topological insulator thin films YL C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T ... Physical Revfiew B 88, 041307 (R), 2013 | 76* | 2013 |
Evidence for Half-Metallicity in n-type HgCr2Se4 PX Tong Guan, Chaojing Lin, Chongli Yang, Youguo Shi, Cong Ren, Yongqing Li ... Physical Review Letters 115, 087002, 2015 | 74* | 2015 |
Cavity enhanced Faraday rotation of semiconductor quantum dots DDA Yongqing Li, D. W. Steuerman, J. Berezovsky, D. S. Seferos, G. C. Bazan Applied Physics Letters 88, 193126, 2006 | 58 | 2006 |
Large negative magnetoresistance of a nearly Dirac material: Layered antimonide C Yi, S Yang, M Yang, L Wang, Y Matsushita, S Miao, Y Jiao, J Cheng, ... Physical Review B 96 (20), 205103, 2017 | 54 | 2017 |
Linear and nonlinear two-terminal spin-valve effect from chirality-induced spin selectivity T Liu, X Wang, H Wang, G Shi, F Gao, H Feng, H Deng, L Hu, E Lochner, ... ACS nano 14 (11), 15983-15991, 2020 | 49 | 2020 |
Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity PX Tianhan Liu, Xiaolei Wang, Hailong Wang, Gang Shi, Fan Gao, Honglei Feng ... ACS Nano 14 (11), 15983–15991, 2020 | 49 | 2020 |
Enhanced electron dephasing in three-dimensional topological insulators J Liao, Y Ou, H Liu, K He, X Ma, QK Xue, Y Li Nature Communications 8, 16071, 2017 | 47 | 2017 |
Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy YL W. M. Yang, S. Yang, Q. H. Zhang, Y. Xu, S. P. Shen, J. Liao, J. Teng, C ... Applied Physics Letters 105, 092411, 2014 | 46 | 2014 |
Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating HO Yongqing Li, C. Ren, P. Xiong, S. von Molnár, Y. Ohno Physical Review Letters 93, 246602, 2004 | 44* | 2004 |