| Continuous analytic IV model for surrounding-gate MOSFETs D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores IEEE Electron Device Letters 25 (8), 571-573, 2004 | 343 | 2004 |
| Explicit continuous model for long-channel undoped surrounding gate MOSFETs B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005 | 258 | 2005 |
| Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification A Rusu, GA Salvatore, D Jimenez, AM Ionescu 2010 international electron devices meeting, 16.3. 1-16.3. 4, 2010 | 252 | 2010 |
| The environment of graphene probed by electrostatic force microscopy J Moser, A Verdaguer, D Jiménez, A Barreiro, A Bachtold Applied Physics Letters 92 (12), 2008 | 225 | 2008 |
| Quantum-size effects in hafnium-oxide resistive switching S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ... Applied Physics Letters 102 (18), 2013 | 178 | 2013 |
| Modeling of nanoscale gate-all-around MOSFETs D Jimenez, JJ Saenz, B Iniguez, J Sune, LF Marsal, J Pallares IEEE Electron device letters 25 (5), 314-316, 2004 | 163 | 2004 |
| Analytic model for the surface potential and drain current in negative capacitance field-effect transistors D Jimenez, E Miranda, A Godoy IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010 | 161 | 2010 |
| Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors A Cano, D Jiménez Applied Physics Letters 97 (13), 2010 | 135 | 2010 |
| Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications D Jimenez, O Moldovan IEEE Transactions on Electron Devices 58 (11), 4049-4052, 2011 | 127 | 2011 |
| Negative capacitance detected G Catalan, D Jiménez, A Gruverman Nature materials 14 (2), 137-139, 2015 | 115 | 2015 |
| Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors D Jiménez Applied Physics Letters 101 (24), 2012 | 115 | 2012 |
| Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor D Jiménez, JJ Sáenz, B Inıquez, J Suñé, LF Marsal, J Pallares Journal of Applied Physics 94 (2), 1061-1068, 2003 | 114 | 2003 |
| Explicit analytical charge and capacitance models of undoped double-gate MOSFETs O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007 | 104 | 2007 |
| Design and analysis of silicon antiresonant reflecting optical waveguides for evanscent field sensor F Prieto, A Llobera, A Calle, LM Lechuga Journal of lightwave technology 18 (7), 966, 2000 | 103 | 2000 |
| Tunable graphene–GaSe dual heterojunction device W Kim, C Li, FA Chaves, D Jiménez, RD Rodriguez, J Susoma, ... Advanced Materials 28 (9), 1845-1852, 2016 | 95 | 2016 |
| An accurate and Verilog-A compatible compact model for graphene field-effect transistors GM Landauer, D Jimenez, JL Gonzalez IEEE Transactions on Nanotechnology 13 (5), 895-904, 2014 | 84 | 2014 |
| A simple drain current model for Schottky-barrier carbon nanotube field effect transistors D Jiménez, X Cartoixa, E Miranda, J Sune, FA Chaves, S Roche Nanotechnology 18 (2), 025201, 2006 | 84 | 2006 |
| Explicit drain current, charge and capacitance model of graphene field-effect transistors D Jimenez IEEE Transactions on Electron Devices 58 (12), 4377-4383, 2011 | 78 | 2011 |
| Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications O Moldovan, A Cerdeira, D Jiménez, JP Raskin, V Kilchytska, D Flandre, ... Solid-state electronics 51 (5), 655-661, 2007 | 76 | 2007 |
| Physical model of the contact resistivity of metal-graphene junctions FA Chaves, D Jiménez, AW Cummings, S Roche Journal of Applied Physics 115 (16), 2014 | 70 | 2014 |
Jaume Roig-GuitartPrincipal Device Engineer, On SemiconductorVerified email at onsemi.com
