David Jiménez
David Jiménez
Professor at UAB (Universitat Autònoma de Barcelona)
Verified email at
Cited by
Cited by
Continuous analytic IV model for surrounding-gate MOSFETs
D Jimenez, B Iniguez, J Sune, LF Marsal, J Pallares, J Roig, D Flores
IEEE Electron Device Letters 25 (8), 571-573, 2004
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
B Iniguez, D Jimenez, J Roig, HA Hamid, LF Marsal, J Pallarès
IEEE Transactions on Electron Devices 52 (8), 1868-1873, 2005
Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
A Rusu, GA Salvatore, D Jimenez, AM Ionescu
2010 international electron devices meeting, 16.3. 1-16.3. 4, 2010
The environment of graphene probed by electrostatic force microscopy
J Moser, A Verdaguer, D Jiménez, A Barreiro, A Bachtold
Applied Physics Letters 92 (12), 2008
Quantum-size effects in hafnium-oxide resistive switching
S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...
Applied Physics Letters 102 (18), 2013
Modeling of nanoscale gate-all-around MOSFETs
D Jimenez, JJ Saenz, B Iniguez, J Sune, LF Marsal, J Pallares
IEEE Electron device letters 25 (5), 314-316, 2004
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
D Jimenez, E Miranda, A Godoy
IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010
Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
A Cano, D Jiménez
Applied Physics Letters 97 (13), 2010
Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications
D Jimenez, O Moldovan
IEEE Transactions on Electron Devices 58 (11), 4049-4052, 2011
Negative capacitance detected
G Catalan, D Jiménez, A Gruverman
Nature materials 14 (2), 137-139, 2015
Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
D Jiménez
Applied Physics Letters 101 (24), 2012
Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor
D Jiménez, JJ Sáenz, B Inıquez, J Suñé, LF Marsal, J Pallares
Journal of Applied Physics 94 (2), 1061-1068, 2003
Explicit analytical charge and capacitance models of undoped double-gate MOSFETs
O Moldovan, D Jimenez, JR Guitart, FA Chaves, B Iniguez
IEEE Transactions on Electron Devices 54 (7), 1718-1724, 2007
Design and analysis of silicon antiresonant reflecting optical waveguides for evanscent field sensor
F Prieto, A Llobera, A Calle, LM Lechuga
Journal of lightwave technology 18 (7), 966, 2000
Tunable graphene–GaSe dual heterojunction device
W Kim, C Li, FA Chaves, D Jiménez, RD Rodriguez, J Susoma, ...
Advanced Materials 28 (9), 1845-1852, 2016
An accurate and Verilog-A compatible compact model for graphene field-effect transistors
GM Landauer, D Jimenez, JL Gonzalez
IEEE Transactions on Nanotechnology 13 (5), 895-904, 2014
A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
D Jiménez, X Cartoixa, E Miranda, J Sune, FA Chaves, S Roche
Nanotechnology 18 (2), 025201, 2006
Explicit drain current, charge and capacitance model of graphene field-effect transistors
D Jimenez
IEEE Transactions on Electron Devices 58 (12), 4377-4383, 2011
Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications
O Moldovan, A Cerdeira, D Jiménez, JP Raskin, V Kilchytska, D Flandre, ...
Solid-state electronics 51 (5), 655-661, 2007
Physical model of the contact resistivity of metal-graphene junctions
FA Chaves, D Jiménez, AW Cummings, S Roche
Journal of Applied Physics 115 (16), 2014
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