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Fikru Adamu-Lema
Fikru Adamu-Lema
University Of Glasgow, Research Associate
Verified email at glasgow.ac.uk - Homepage
Title
Cited by
Cited by
Year
Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
G Roy, AR Brown, F Adamu-Lema, S Roy, A Asenov
IEEE Transactions on Electron Devices 53 (12), 3063-3070, 2006
3332006
Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells
B Cheng, S Roy, G Roy, F Adamu-Lema, A Asenov
Solid-State Electronics 49 (5), 740-746, 2005
1072005
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
552018
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
472014
Extended Analysis of the -FET: Operation as Capacitorless eDRAM
C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
442017
Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: A comprehensive simulation analysis
X Wang, F Adamu-Lema, B Cheng, A Asenov
IEEE transactions on electron devices 60 (5), 1547-1554, 2013
372013
Integrated atomistic process and device simulation of decananometre MOSFETs
A Asenov, M Jaraiz, S Roy, G Roy, F Adamu-Lema, AR Brown, V Moroz, ...
International Conference on Simulation of Semiconductor Processes and …, 2002
362002
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
352017
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ...
IEEE transactions on electron devices 60 (2), 833-839, 2012
342012
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics 19, 1031-1046, 2020
292020
Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study
K Samsudin, F Adamu-Lema, AR Brown, S Roy, A Asenov
Solid-State Electronics 51 (4), 611-616, 2007
262007
Experimental and simulation study of silicon nanowire transistors using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ...
IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017
252017
Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness
AR Brown, F Adamu-Lema, A Asenov
Superlattices and Microstructures 34 (3-6), 283-291, 2003
252003
Simulation study of vertically stacked lateral Si nanowires transistors for 5-nm CMOS applications
T Al-Ameri, VP Georgiev, F Adamu-Lema, A Asenov
IEEE Journal of the Electron Devices Society 5 (6), 466-472, 2017
222017
Problems with the continuous doping TCAD simulations of decananometer CMOS transistors
A Asenov, F Adamu-Lema, X Wang, SM Amoroso
IEEE Transactions on Electron Devices 61 (8), 2745-2751, 2014
222014
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
222013
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov
IEEE transactions on electron devices 60 (12), 4008-4013, 2013
212013
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov
Solid-State Electronics 84, 120-126, 2013
212013
NESS: new flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
202018
Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs
S Markov, SM Amoroso, L Gerrer, F Adamu-Lema, A Asenov
IEEE electron device letters 34 (5), 686-688, 2013
192013
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