| Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs J Franco, B Kaczer, S Mukhopadhyay, P Duhan, P Weckx, PJ Roussel, ... 2016 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2016 | 14 | 2016 |
| Analysis of hot-carrier degradation in 22nm FDSOI transistors using RF small-signal characteristics DK Huynh, QH Le, P Duhan, D Wang, T Kämpfe, M Rudolph 2020 German Microwave Conference (GeMiC), 244-247, 2020 | 7 | 2020 |
| Anomalous Width Dependence of Gate Current in High- Metal Gate nMOS Transistors P Duhan, MD Ganeriwala, VR Rao, NR Mohapatra IEEE Electron Device Letters 36 (8), 739-741, 2015 | 7 | 2015 |
| Endurance study of silicon-doped hafnium oxide (HSO) and zirconium-doped hafnium oxide (HZO)-based FeFET memory P Duhan, T Ali, P Khedgarkar, K Kühnel, M Czernohorsky, M Rudolph, ... IEEE Transactions on Electron Devices, 2023 | 6 | 2023 |
| Effect of substrate implant tuning on the performance of MFIS silicon doped hafnium oxide (HSO) FeFET memory T Ali, K Kühnel, K Mertens, M Czernohorsky, M Rudolph, P Duhan, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 6 | 2020 |
| PBTI in HKMG nMOS transistors—effect of width, layout, and other technological parameters P Duhan, VR Rao, NR Mohapatra IEEE Transactions on Electron Devices 64 (10), 4018-4024, 2017 | 6 | 2017 |
| Role of device dimensions and layout on the analog performance of gate-first HKMG nMOS transistors P Duhan, NR Mohapatra IEEE Transactions on Electron Devices 62 (11), 3792-3798, 2015 | 5 | 2015 |
| Impact of temperature on reliability of mfis hzo-based ferroelectric tunnel junctions A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P11-1-P11-5, 2022 | 4 | 2022 |
| Effect of device dimensions, layout and pre-gate carbon implant on hot carrier induced degradation in HKMG nMOS transistors P Duhan, VR Rao, NR Mohapatra IEEE Transactions on Device and Materials Reliability 20 (3), 555-561, 2020 | 4 | 2020 |
| Width and layout dependence of HC and PBTI induced degradation in HKMG nMOS transistors P Duhan, VR Rao, NR Mohapatra 2016 IEEE International Reliability Physics Symposium (IRPS), XT-07-1-XT-07-5, 2016 | 4 | 2016 |
| Effects of HfO 2 and lanthanum capping layer thickness on the narrow width behavior of gate first high-k and metal gate NMOS transistors S SivaNaresh, NR Mohapatra, P Duhan Proc. Int. Conf. SSDM, 60-61, 2013 | 3 | 2013 |
| Modeling the Current-Voltage characteristics & Temporal Drift in Threshold Voltage of ISFET for pH Measurements PD V.K.Khanna 2nd ISSS National Conference on MEMS, Microsensors, Smart Materials …, 2007 | 3* | 2007 |
| Analog performance of gate-first HKMG NMOS transistors—Role of device dimensions and layout NR Mohapatra, SS Naresh, P Duhan 2015 International Symposium on VLSI Technology, Systems and Applications, 1-2, 2015 | 1 | 2015 |
| TCAD-based investigation of 1/f noise in advanced 22 nm FDSOI MOSFETs P Khedgarkar, MD Ganeriwala, P Duhan Applied Physics Letters 125 (20), 2024 | | 2024 |
| Excitation of high-quality quasi-BIC toroidal mode in a lattice perturbed terahertz metasurface BK Bhowmik, KM Rohith, P Duhan, G Kumar Applied Physics Letters 125 (16), 2024 | | 2024 |
