Follow
Pardeep Duhan
Title
Cited by
Cited by
Year
Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
J Franco, B Kaczer, S Mukhopadhyay, P Duhan, P Weckx, PJ Roussel, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2016
142016
Analysis of hot-carrier degradation in 22nm FDSOI transistors using RF small-signal characteristics
DK Huynh, QH Le, P Duhan, D Wang, T Kämpfe, M Rudolph
2020 German Microwave Conference (GeMiC), 244-247, 2020
72020
Anomalous Width Dependence of Gate Current in High- Metal Gate nMOS Transistors
P Duhan, MD Ganeriwala, VR Rao, NR Mohapatra
IEEE Electron Device Letters 36 (8), 739-741, 2015
72015
Endurance study of silicon-doped hafnium oxide (HSO) and zirconium-doped hafnium oxide (HZO)-based FeFET memory
P Duhan, T Ali, P Khedgarkar, K Kühnel, M Czernohorsky, M Rudolph, ...
IEEE Transactions on Electron Devices, 2023
62023
Effect of substrate implant tuning on the performance of MFIS silicon doped hafnium oxide (HSO) FeFET memory
T Ali, K Kühnel, K Mertens, M Czernohorsky, M Rudolph, P Duhan, ...
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
62020
PBTI in HKMG nMOS transistors—effect of width, layout, and other technological parameters
P Duhan, VR Rao, NR Mohapatra
IEEE Transactions on Electron Devices 64 (10), 4018-4024, 2017
62017
Role of device dimensions and layout on the analog performance of gate-first HKMG nMOS transistors
P Duhan, NR Mohapatra
IEEE Transactions on Electron Devices 62 (11), 3792-3798, 2015
52015
Impact of temperature on reliability of mfis hzo-based ferroelectric tunnel junctions
A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger, ...
2022 IEEE International Reliability Physics Symposium (IRPS), P11-1-P11-5, 2022
42022
Effect of device dimensions, layout and pre-gate carbon implant on hot carrier induced degradation in HKMG nMOS transistors
P Duhan, VR Rao, NR Mohapatra
IEEE Transactions on Device and Materials Reliability 20 (3), 555-561, 2020
42020
Width and layout dependence of HC and PBTI induced degradation in HKMG nMOS transistors
P Duhan, VR Rao, NR Mohapatra
2016 IEEE International Reliability Physics Symposium (IRPS), XT-07-1-XT-07-5, 2016
42016
Effects of HfO 2 and lanthanum capping layer thickness on the narrow width behavior of gate first high-k and metal gate NMOS transistors
S SivaNaresh, NR Mohapatra, P Duhan
Proc. Int. Conf. SSDM, 60-61, 2013
32013
Modeling the Current-Voltage characteristics & Temporal Drift in Threshold Voltage of ISFET for pH Measurements
PD V.K.Khanna
2nd ISSS National Conference on MEMS, Microsensors, Smart Materials …, 2007
3*2007
Analog performance of gate-first HKMG NMOS transistors—Role of device dimensions and layout
NR Mohapatra, SS Naresh, P Duhan
2015 International Symposium on VLSI Technology, Systems and Applications, 1-2, 2015
12015
TCAD-based investigation of 1/f noise in advanced 22 nm FDSOI MOSFETs
P Khedgarkar, MD Ganeriwala, P Duhan
Applied Physics Letters 125 (20), 2024
2024
Excitation of high-quality quasi-BIC toroidal mode in a lattice perturbed terahertz metasurface
BK Bhowmik, KM Rohith, P Duhan, G Kumar
Applied Physics Letters 125 (16), 2024
2024
The system can't perform the operation now. Try again later.
Articles 1–15