| Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo Journal of Applied Physics 107 (11), 2010 | 232 | 2010 |
| Transport and magnetic resonance studies of polyaniline JP Travers, J Chroboczek, F Devreux, F Genoud, M Nechtschein, A Syed, ... Molecular Crystals and Liquid Crystals 121 (1-4), 195-199, 1985 | 207 | 1985 |
| 75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002 | 146 | 2002 |
| Water effects in polyaniline: NMR and transport properties M Nechtschein, C Santier, JP Travers, J Chroboczek, A Alix, M Ripert Synthetic Metals 18 (1-3), 311-316, 1987 | 135 | 1987 |
| Fabrication and structure of epitaxial Er silicide films on (111) Si FA d’Avitaya, A Perio, JC Oberlin, Y Campidelli, JA Chroboczek Applied physics letters 54 (22), 2198-2200, 1989 | 131 | 1989 |
| Electronic transport properties of epitaxial erbium silicide/silicon heterostructures JY Duboz, PA Badoz, FA d’Avitaya, JA Chroboczek Applied physics letters 55 (1), 84-86, 1989 | 101 | 1989 |
| Growth, characterization and electrical properties of epitaxial erbium silicide FA d'Avitaya, PA Badoz, Y Campidelli, JA Chroboczek, JY Duboz, A Perio, ... Thin Solid Films 184 (1-2), 283-293, 1990 | 69 | 1990 |
| Epitaxial erbium silicide films on Si (111) surface: Fabrication, structure, and electrical properties JY Duboz, PA Badoz, A Perio, JC Oberlin, FA d'Avitaya, Y Campidelli, ... Applied Surface Science 38 (1-4), 171-177, 1989 | 62 | 1989 |
| A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters S Jouan, R Planche, H Baudry, P Ribot, JA Chroboczek, D Dutartre, ... IEEE Transactions on Electron Devices 46 (7), 1525-1531, 1999 | 58 | 1999 |
| Crystallographic and magnetic structures of Er3Si5 S Auffret, J Pierre, B Lambert, JL Soubeyroux, JA Chroboczek Physica B: Condensed Matter 162 (3), 271-280, 1990 | 54 | 1990 |
| Impurity conduction in silicon and effect of uniaxial compression on p-type Si JA Chroboczek, FH Pollak, HF Staunton Philosophical Magazine B 50 (1), 113-156, 1984 | 54 | 1984 |
| Carrier mobility in organic field-effect transistors Y Xu, M Benwadih, R Gwoziecki, R Coppard, T Minari, C Liu, ... Journal of Applied Physics 110 (10), 2011 | 53 | 2011 |
| Origin of low-frequency noise in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, J Chroboczek, F Balestra, G Ghibaudo Solid-state electronics 61 (1), 106-110, 2011 | 51 | 2011 |
| Low frequency noise in thin gate oxide MOSFETs R Kolarova, T Skotnicki, JA Chroboczek Microelectronics Reliability 41 (4), 579-585, 2001 | 50 | 2001 |
| Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors A Mounib, G Ghibaudo, F Balestra, D Pogany, A Chantre, J Chroboczek Journal of Applied Physics 79 (6), 3330-3336, 1996 | 50 | 1996 |
| Silicon overgrowth on CoSi2/Si (111) epitaxial structures: application to permeable base transistor FA d'Avitaya, JA Chroboczek, C d'Anterroches, G Glastre, Y Campidelli, ... Journal of Crystal Growth 81 (1-4), 463-469, 1987 | 43 | 1987 |
| Dimension scaling of noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors P Llinares, D Celi, O Roux-dit-Buisson, G Ghibaudo, JA Chroboczek Journal of applied physics 82 (5), 2671-2675, 1997 | 42 | 1997 |
| Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non‐Equivalent Lattice Positions in InSb S Porowski, M Kończykowski, J Chroboczek physica status solidi (b) 63 (1), 291-296, 1974 | 41 | 1974 |
| 1.54 μm photoluminescence of erbium-implanted silicon D Moutonnet, H l'Haridon, PN Favennec, M Salvi, M Gauneau, ... Materials Science and Engineering: B 4 (1-4), 75-77, 1989 | 40 | 1989 |
| Low-Frequency Noise in Oxide-Based Resistive Random Access Memory Cells Z Fang, HY Yu, JA Chroboczek, G Ghibaudo, J Buckley, B DeSalvo, X Li, ... IEEE transactions on electron devices 59 (3), 850-853, 2012 | 39 | 2012 |
Paulo Sergio Soares GuimaraesProfessor of Physics, Universidade Federal de Minas GeraisVerified email at fisica.ufmg.br
