| Electronics based on two-dimensional materials G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ... Nature nanotechnology 9 (10), 768-779, 2014 | 3009 | 2014 |
| Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures D McManus, S Vranic, F Withers, V Sanchez-Romaguera, M Macucci, ... Nature nanotechnology 12 (4), 343-350, 2017 | 517 | 2017 |
| Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride S Bruzzone, G Fiori Applied Physics Letters 99 (22), 2011 | 395 | 2011 |
| Simulation of graphene nanoribbon field-effect transistors G Fiori, G Iannaccone IEEE Electron Device Letters 28 (8), 760-762, 2007 | 387 | 2007 |
| Quantum engineering of transistors based on 2D materials heterostructures G Iannaccone, F Bonaccorso, L Colombo, G Fiori Nature nanotechnology 13 (3), 183-191, 2018 | 374 | 2018 |
| Performance of arsenene and antimonene double-gate MOSFETs from first principles G Pizzi, M Gibertini, E Dib, N Marzari, G Iannaccone, G Fiori Nature communications 7 (1), 12585, 2016 | 299 | 2016 |
| Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature Communications 11 (1), 3385, 2020 | 266 | 2020 |
| Ultralow-voltage bilayer graphene tunnel FET G Fiori, G Iannaccone IEEE Electron Device Letters 30 (10), 1096-1098, 2009 | 198 | 2009 |
| Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs Y Yoon, G Fiori, S Hong, G Iannaccone, J Guo IEEE Transactions on electron devices 55 (9), 2314-2323, 2008 | 197 | 2008 |
| Multiscale modeling for graphene-based nanoscale transistors G Fiori, G Iannaccone Proceedings of the IEEE 101 (7), 1653-1669, 2013 | 173 | 2013 |
| Electrical properties of graphene-metal contacts T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ... Scientific reports 7 (1), 5109, 2017 | 170 | 2017 |
| Lateral graphene–hBCN heterostructures as a platform for fully two-dimensional transistors G Fiori, A Betti, S Bruzzone, G Iannaccone Acs Nano 6 (3), 2642-2648, 2012 | 168 | 2012 |
| Current saturation and voltage gain in bilayer graphene field effect transistors BN Szafranek, G Fiori, D Schall, D Neumaier, H Kurz Nano letters 12 (3), 1324-1328, 2012 | 150 | 2012 |
| Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper S Conti, L Pimpolari, G Calabrese, R Worsley, S Majee, DK Polyushkin, ... Nature communications 11 (1), 3566, 2020 | 122 | 2020 |
| Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam Y Katagiri, T Nakamura, A Ishii, C Ohata, M Hasegawa, S Katsumoto, ... Nano letters 16 (6), 3788-3794, 2016 | 121 | 2016 |
| A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry G Fiori, G Iannaccone, G Klimeck IEEE Transactions on electron devices 53 (8), 1782-1788, 2006 | 121 | 2006 |
| Inkjet printed 2D-crystal based strain gauges on paper C Casiraghi, M Macucci, K Parvez, R Worsley, Y Shin, F Bronte, C Borri, ... Carbon 129, 462-467, 2018 | 118 | 2018 |
| On the possibility of tunable-gap bilayer graphene FET G Fiori, G Iannaccone IEEE Electron Device Letters 30 (3), 261-264, 2009 | 117 | 2009 |
| All-2D material inkjet-printed capacitors: toward fully printed integrated circuits R Worsley, L Pimpolari, D McManus, N Ge, R Ionescu, JA Wittkopf, ... Acs Nano 13 (1), 54-60, 2018 | 102 | 2018 |
| Heterojunction Hybrid Devices from Vapor Phase Grown MoS2 C Yim, M O'Brien, N McEvoy, S Riazimehr, H Schäfer-Eberwein, A Bablich, ... Scientific reports 4 (1), 5458, 2014 | 93 | 2014 |
Giuseppe IannacconeUniversity of Pisa, ItalyVerified email at unipi.it
