Gianluca Fiori
Cited by
Cited by
Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures
D McManus, S Vranic, F Withers, V Sanchez-Romaguera, M Macucci, ...
Nature nanotechnology 12 (4), 343-350, 2017
Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride
S Bruzzone, G Fiori
Applied Physics Letters 99 (22), 2011
Simulation of graphene nanoribbon field-effect transistors
G Fiori, G Iannaccone
IEEE Electron Device Letters 28 (8), 760-762, 2007
Quantum engineering of transistors based on 2D materials heterostructures
G Iannaccone, F Bonaccorso, L Colombo, G Fiori
Nature nanotechnology 13 (3), 183-191, 2018
Performance of arsenene and antimonene double-gate MOSFETs from first principles
G Pizzi, M Gibertini, E Dib, N Marzari, G Iannaccone, G Fiori
Nature communications 7 (1), 12585, 2016
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature Communications 11 (1), 3385, 2020
Ultralow-voltage bilayer graphene tunnel FET
G Fiori, G Iannaccone
IEEE Electron Device Letters 30 (10), 1096-1098, 2009
Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs
Y Yoon, G Fiori, S Hong, G Iannaccone, J Guo
IEEE Transactions on electron devices 55 (9), 2314-2323, 2008
Multiscale modeling for graphene-based nanoscale transistors
G Fiori, G Iannaccone
Proceedings of the IEEE 101 (7), 1653-1669, 2013
Electrical properties of graphene-metal contacts
T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ...
Scientific reports 7 (1), 5109, 2017
Lateral graphene–hBCN heterostructures as a platform for fully two-dimensional transistors
G Fiori, A Betti, S Bruzzone, G Iannaccone
Acs Nano 6 (3), 2642-2648, 2012
Current saturation and voltage gain in bilayer graphene field effect transistors
BN Szafranek, G Fiori, D Schall, D Neumaier, H Kurz
Nano letters 12 (3), 1324-1328, 2012
Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper
S Conti, L Pimpolari, G Calabrese, R Worsley, S Majee, DK Polyushkin, ...
Nature communications 11 (1), 3566, 2020
Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam
Y Katagiri, T Nakamura, A Ishii, C Ohata, M Hasegawa, S Katsumoto, ...
Nano letters 16 (6), 3788-3794, 2016
A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry
G Fiori, G Iannaccone, G Klimeck
IEEE Transactions on electron devices 53 (8), 1782-1788, 2006
Inkjet printed 2D-crystal based strain gauges on paper
C Casiraghi, M Macucci, K Parvez, R Worsley, Y Shin, F Bronte, C Borri, ...
Carbon 129, 462-467, 2018
On the possibility of tunable-gap bilayer graphene FET
G Fiori, G Iannaccone
IEEE Electron Device Letters 30 (3), 261-264, 2009
All-2D material inkjet-printed capacitors: toward fully printed integrated circuits
R Worsley, L Pimpolari, D McManus, N Ge, R Ionescu, JA Wittkopf, ...
Acs Nano 13 (1), 54-60, 2018
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
C Yim, M O'Brien, N McEvoy, S Riazimehr, H Schäfer-Eberwein, A Bablich, ...
Scientific reports 4 (1), 5458, 2014
The system can't perform the operation now. Try again later.
Articles 1–20