Materials science with large-scale data and informatics: Unlocking new opportunities J Hill, G Mulholland, K Persson, R Seshadri, C Wolverton, B Meredig Mrs Bulletin 41 (5), 399-409, 2016 | 266 | 2016 |
Web-based machine learning models for real-time screening of thermoelectric materials properties MW Gaultois, AO Oliynyk, A Mar, TD Sparks, GJ Mulholland, B Meredig American Institute of Physics, 2016 | 199* | 2016 |
Perspective: Web-based machine learning models for real-time screening of thermoelectric materials properties MW Gaultois, AO Oliynyk, A Mar, TD Sparks, GJ Mulholland, B Meredig APL Materials 4 (5), 053213, 2016 | 199 | 2016 |
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... Applied Physics Letters 97 (3), 2010 | 118 | 2010 |
Low-temperature synthesis of large-area, free-standing nanorod arrays on ITO/glass and other conducting substrates KP Musselman, GJ Mulholland, AP Robinson, L Schmidt-Mende, ... | 99 | 2008 |
Efficiency retention at high current injection levels in -plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ... Applied Physics Letters 95 (12), 121107, 2009 | 80 | 2009 |
On carrier spillover in c-and m-plane InGaN light emitting diodes J Lee, X Li, X Ni, Ü Özgür, H Morkoç, T Paskova, G Mulholland, KR Evans Applied Physics Letters 95 (20), 201113, 2009 | 62 | 2009 |
Perspective: Materials informatics across the product lifecycle: Selection, manufacturing, and certification GJ Mulholland, SP Paradiso Apl Materials 4 (5), 2016 | 43 | 2016 |
Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN X Ni, J Lee, M Wu, X Li, R Shimada, Ü Özgür, AA Baski, H Morkoç, ... Applied Physics Letters 95 (10), 2009 | 31 | 2009 |
Identifying threading dislocations in GaN films and substrates by electron channelling RJ Kamaladasa, F Liu, LM Porter, RF Davis, DD Koleske, G Mulholland, ... Journal of Microscopy 244 (3), 311-319, 2011 | 25 | 2011 |
The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... physica status solidi (RRL)–Rapid Research Letters 4 (8‐9), 194-196, 2010 | 25 | 2010 |
HVPE GaN for high power electronic Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Solid-state electronics 79, 238-243, 2013 | 18 | 2013 |
A recommendation engine for suggesting unexpected thermoelectric chemistries MW Gaultois, AO Oliynyk, A Mar, TD Sparks, GJ Mulholland, B Meredig arXiv preprint arXiv:1502.07635, 2015 | 9 | 2015 |
Hackathon aims to solve materials problems G Mulholland, B Meredig MRS Bulletin 40 (4), 366-370, 2015 | 7 | 2015 |
Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates SM Eichfeld, D Won, K Trumbull, M Labella, X Weng, J Robinson, ... physica status solidi c 8 (7‐8), 2053-2055, 2011 | 5 | 2011 |
On the reduction of efficiency loss in polar c ‐plane and non‐polar m ‐plane InGaN light emitting diodes X Li, X Ni, HY Liu, F Zhang, S Liu, J Lee, V Avrutin, Ü Özgür, T Paskova, ... physica status solidi c 8 (5), 1560-1563, 2011 | 3 | 2011 |
High-throughput characterization of Lu-doped zirconia R Huang, E Antono, B Meredig, GJ Mulholland, TC Davenport, SM Haile Solid State Ionics 368, 115698, 2021 | 2 | 2021 |
Internal quantum efficiency of m-plane InGaN on Si and GaN J Lee, X Ni, M Wu, X Li, R Shimada, Ü Özgür, AA Baski, H Morkoç, ... Gallium Nitride Materials and Devices V 7602, 306-311, 2010 | 2 | 2010 |
Product design and materials development integration using a machine learning generated capability map JB Ling, AWA Van Grootel, JS Koeller, JS Peerless, EMT Antono, ... US Patent 11,004,037, 2021 | 1 | 2021 |
GaN Power Schottky Diodes RP Tompkins, JR Smith, S Zhou, KW Kirchner, MA Derenge, KA Jones, ... ECS Transactions 45 (7), 17, 2012 | 1 | 2012 |