| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 663 | 2019 |
| Brain-inspired computing needs a master plan A Mehonic, AJ Kenyon Nature 604 (7905), 255-260, 2022 | 476 | 2022 |
| Resistive switching in silicon suboxide films A Mehonic, S Cueff, M Wojdak, S Hudziak, O Jambois, C Labbe, ... Journal of Applied Physics 111 (7), 074507, 2012 | 312 | 2012 |
| Memristors—From In‐Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio‐Inspired Computing A Mehonic, A Sebastian, B Rajendran, O Simeone, E Vasilaki, AJ Kenyon Advanced Intelligent Systems 2 (11), 2000085, 2020 | 259 | 2020 |
| Silicon Oxide (SiOx): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018 | 211 | 2018 |
| Quantum conductance in silicon oxide resistive memory devices A Mehonic, A Vrajitoarea, S Cueff, S Hudziak, H Howe, C Labbe, R Rizk, ... Scientific reports 3 (1), 1-8, 2013 | 204 | 2013 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suńe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 197 | 2021 |
| Complementary metal‐oxide semiconductor and memristive hardware for neuromorphic computing M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ... Advanced Intelligent Systems 2 (5), 1900189, 2020 | 143 | 2020 |
| Emulating the electrical activity of the neuron using a silicon oxide RRAM cell A Mehonic, AJ Kenyon Frontiers in neuroscience 10, 57, 2016 | 143 | 2016 |
| Electrically tailored resistance switching in silicon oxide A Mehonic, S Cueff, M Wojdak, S Hudziak, C Labbé, R Rizk, AJ Kenyon Nanotechnology 23 (45), 455201, 2012 | 142 | 2012 |
| Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ... Journal of Applied Physics 117 (12), 2015 | 138 | 2015 |
| Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature communications 15 (1), 1974, 2024 | 127 | 2024 |
| Defects at oxide surfaces J Jupille, G Thornton Springer, 2015 | 105 | 2015 |
| Nanoscale transformations in metastable, amorphous, silicon‐rich silica A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ... Advanced Materials 28 (34), 7486-7493, 2016 | 93* | 2016 |
| Committee machines—a universal method to deal with non-idealities in memristor-based neural networks D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ... Nature communications 11 (1), 4273, 2020 | 87 | 2020 |
| Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ... Microelectronic Engineering 178, 98-103, 2017 | 86 | 2017 |
| Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM M Buckwell, L Montesi, S Hudziak, A Mehonic, AJ Kenyon Nanoscale 7 (43), 18030-18035, 2015 | 77 | 2015 |
| Simulation of inference accuracy using realistic RRAM devices A Mehonic, D Joksas, WH Ng, M Buckwell, AJ Kenyon Frontiers in neuroscience 13, 593, 2019 | 75 | 2019 |
| Light-activated resistance switching in SiOx RRAM devices A Mehonic, T Gerard, AJ Kenyon Applied Physics Letters 111 (23), 2017 | 63 | 2017 |
| Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ... Scientific reports 7 (1), 9274, 2017 | 62 | 2017 |
Tony KenyonProfessor of Nanoelectronic & Nanophotonic Materials, UCLVerified email at ee.ucl.ac.uk
