| A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model T Kunikiyo, M Takenaka, Y Kamakura, M Yamaji, H Mizuno, M Morifuji, ... Journal of Applied Physics 75 (1), 297-312, 1994 | 219 | 1994 |
| Impact ionization model for full band Monte Carlo simulation Y Kamakura, H Mizuno, M Yamaji, M Morifuji, K Taniguchi, C Hamaguchi, ... Journal of applied physics 75 (7), 3500-3506, 1994 | 134 | 1994 |
| Electron mobility calculation for graphene on substrates H Hirai, H Tsuchiya, Y Kamakura, N Mori, M Ogawa Journal of Applied Physics 116 (8), 2014 | 119 | 2014 |
| A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ... IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994 | 92 | 1994 |
| A new soft breakdown model for thin thermal SiO/sub 2/films under constant current stress T Tomita, H Utsunomiya, T Sakura, Y Kamakura, K Taniguchi IEEE Transactions on Electron Devices 46 (1), 159-164, 1999 | 84 | 1999 |
| Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport S Kaneko, H Tsuchiya, Y Kamakura, N Mori, M Ogawa Applied Physics Express 7 (3), 035102, 2014 | 82 | 2014 |
| Methodology of thermoelectric power factor enhancement by controlling nanowire interface T Ishibe, A Tomeda, K Watanabe, Y Kamakura, N Mori, N Naruse, Y Mera, ... ACS applied materials & interfaces 10 (43), 37709-37716, 2018 | 81 | 2018 |
| A detailed study of soft-and pre-soft-breakdowns in small geometry MOS structures T Sakura, H Utsunomiya, Y Kamakura, K Taniguchi International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 74 | 1998 |
| Modeling, Simulation, Fabrication, and Characterization of a 10-W/cm2Class Si-Nanowire Thermoelectric Generator for IoT Applications M Tomita, S Oba, Y Himeda, R Yamato, K Shima, T Kumada, M Xu, ... IEEE Transactions on Electron Devices 65 (11), 5180-5188, 2018 | 73 | 2018 |
| Equivalent transport models in atomistic quantum wires G Mil’nikov, N Mori, Y Kamakura Physical Review B 85 (3), 035317, 2012 | 67 | 2012 |
| The theoretical highest frame rate of silicon image sensors TG Etoh, AQ Nguyen, Y Kamakura, K Shimonomura, TY Le, N Mori Sensors 17 (3), 483, 2017 | 56 | 2017 |
| Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure T Watanabe, T Teraji, T Ito, Y Kamakura, K Taniguchi Journal of Applied Physics 95 (9), 4866-4874, 2004 | 55 | 2004 |
| Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation T Zhan, R Yamato, S Hashimoto, M Tomita, S Oba, Y Himeda, K Mesaki, ... Science and Technology of advanced MaTerialS 19 (1), 443-453, 2018 | 53 | 2018 |
| A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxides T Hosoi, PL Re, Y Kamakura, K Taniguchi Digest. International Electron Devices Meeting,, 155-158, 2002 | 51 | 2002 |
| Monte Carlo simulation of phonon transport in silicon including a realistic dispersion relation K Kukita, Y Kamakura Journal of Applied Physics 114 (15), 2013 | 49 | 2013 |
| Determination of threshold energy for hot electron interface state generation JD Bude, T Iizuka, Y Kamakura International Electron Devices Meeting. Technical Digest, 865-868, 1996 | 38 | 1996 |
| Publisher’s Note:“germanene on Al (111) grown at nearly room temperature” SC Chen, JY Wu, CY Lin, MF Lin Applied Physics Express 11, 019201, 2018 | 36 | 2018 |
| R-matrix theory of quantum transport and recursive propagation method for device simulations G Mil’nikov, N Mori, Y Kamakura, T Ezaki Journal of Applied Physics 104 (4), 2008 | 35 | 2008 |
| Hot hole induced breakdown of thin silicon dioxide films T Tomita, H Utsunomiya, Y Kamakura, K Taniguchi Applied physics letters 71 (25), 3664-3666, 1997 | 34 | 1997 |
| Boron segregation to extended defects induced by self-ion implantation into silicon J Xia, T Saito, R Kim, T Aoki, Y Kamakura, K Taniguchi Journal of applied physics 85 (11), 7597-7603, 1999 | 33 | 1999 |
