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Michael Mastro
Michael Mastro
US Naval Research Lab
Verified email at us.navy.mil
Title
Cited by
Cited by
Year
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
24072018
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
4592017
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2852010
Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
MA Mastro, CR Eddy Jr, S Akbar
US Patent 7,928,471, 2011
2622011
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
1872012
Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
J Kim, S Oh, MA Mastro, J Kim
Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016
1742016
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE electron device letters 33 (1), 23-25, 2011
1572011
III–V compound semiconductors: integration with silicon-based microelectronics
T Li, M Mastro, A Dadgar
CRC press, 2010
1492010
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45, 2031-2037, 2016
1482016
Surface depletion effects in semiconducting nanowires
BS Simpkins, MA Mastro, CR Eddy, PE Pehrsson
Journal of Applied Physics 103 (10), 2008
1422008
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy, ...
Applied Physics Letters 99 (14), 2011
1302011
Characterizing the tunable refractive index of vanadium dioxide
M Currie, MA Mastro, VD Wheeler
Optical Materials Express 7 (5), 1697-1707, 2017
1282017
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
S Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ Pearton
Applied Physics Letters 109 (6), 2016
1222016
Development of solar-blind photodetectors based on Si-implanted β-Ga2O3
S Oh, Y Jung, MA Mastro, JK Hite, CR Eddy, J Kim
Optics Express 23 (22), 28300-28305, 2015
1222015
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor
J Kim, MA Mastro, MJ Tadjer, J Kim
ACS applied materials & interfaces 9 (25), 21322-21327, 2017
1162017
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
1132014
Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake
S Oh, MA Mastro, MJ Tadjer, J Kim
ECS Journal of Solid State Science and Technology 6 (8), Q79, 2017
1082017
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
1052011
Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
J Kim, MA Mastro, MJ Tadjer, J Kim
ACS applied materials & interfaces 10 (35), 29724-29729, 2018
1022018
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Letters 35 (8), 826-828, 2014
932014
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