Addressable electron spin resonance using donors and donor molecules in silicon SJ Hile, L Fricke, MG House, E Peretz, CY Chen, Y Wang, M Broome, ... Science advances 4 (7), eaaq1459, 2018 | 43 | 2018 |
WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing CS Pang, CY Chen, T Ameen, S Zhang, H Ilatikhameneh, R Rahman, ... Small 15 (41), 1902770, 2019 | 29 | 2019 |
Characterizing Si: P quantum dot qubits with spin resonance techniques Y Wang, CY Chen, G Klimeck, MY Simmons, R Rahman Scientific reports 6 (1), 31830, 2016 | 28 | 2016 |
Sensitivity challenge of steep transistors H Ilatikhameneh, TA Ameen, CY Chen, G Klimeck, R Rahman IEEE Transactions on Electron Devices 65 (4), 1633-1639, 2018 | 26 | 2018 |
Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors CY Chen, YR Wu Journal of Applied Physics 113 (21), 214501, 2013 | 25 | 2013 |
The sub-band structure of atomically sharp dopant profiles in silicon F Mazzola, CY Chen, R Rahman, XG Zhu, CM Polley, T Balasubramanian, ... npj Quantum Materials 5 (1), 34, 2020 | 19 | 2020 |
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation MP Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang, Gerhard Klimeck https://arxiv.org/abs/2002.04220, 2020 | 18* | 2020 |
Antifuse OTP memory cell with performance improvement prevention and operating method of memory CY Chen, LC Chen, YC Wen, MY Wu, HM Chen US Patent 9,013,910, 2015 | 17 | 2015 |
Channel thickness optimization for ultrathin and 2-D chemically doped TFETs CY Chen, TA Ameen, H Ilatikhameneh, R Rahman, G Klimeck, ... IEEE Transactions on Electron Devices 65 (10), 4614-4621, 2018 | 16 | 2018 |
Doping profile engineered triple heterojunction TFETs with 12-nm body thickness CY Chen, HY Tseng, H Ilatikhameneh, TA Ameen, G Klimeck, MJ Rodwell, ... IEEE Transactions on Electron Devices 68 (6), 3104-3111, 2021 | 12 | 2021 |
Nonvolatile memory cell structure and method for programming and reading the same MY Wu, CH Huang, YC Wen, CY Chen, LC Chen, HM Chen US Patent App. 14/176,162, 2014 | 6 | 2014 |
All-electrical control of donor-bound electron spin qubits in silicon Y Wang, CY Chen, G Klimeck, MY Simmons, R Rahman arXiv preprint arXiv:1703.05370, 2017 | 4 | 2017 |
Memory apparatus and method of operation using periodic normal erase dummy cycle to improve stripe erase endurance and data retention RK Chin-Yi Chen, Muhammad Masuduzzaman, Dengtao Zhao, Anubhav Khandelwal US Patent US11,574,693, 2023 | | 2023 |
Quantum phenomena for next generation computing CY Chen Purdue University, 2020 | | 2020 |
The sub-band structure of atomically sharp dopant profiles in silicon M Federico, C Chin-Yi, R Rahman, Z Xie-Gang, CM Polley, B Thiagarajan, ... NPJ Quantum Materials 5 (1), 2020 | | 2020 |
Channel thickness optimization for TFETs RR C. Chen, H. Ilatikhameneh, T. A. Ameen, G. Klimeck TECHCON, 2017 | | 2017 |
Multi-dot multi-electron simulations from full atomistic configuration interaction CY Chen, H Sahasrabudhe, A Tankasala, R Ferdous, YL Hsueh, ... Siliconworkshop, 2017 | | 2017 |
Electronic structure of Si: P delta doped layer CY Chen, F Mazzola, JW Wells, R Rahman APS March Meeting Abstracts 2017, H26. 013, 2017 | | 2017 |
Study of Scaling Issues in Tri-Gate AlGaN/GaN Nanowire Transistors CY Chen, YR Wu Electronic Materials Conference, 2012 | | 2012 |
Scaling Issue of GaN based HEMT. CY Chen, YR Wu International Electron Devices and Materials Symposium, 2011 | | 2011 |