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Halina Krzyżanowska
Halina Krzyżanowska
Vandebilt University
Verified email at Vanderbilt.edu
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Cited by
Cited by
Year
Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
KIB A. R. Klots, A. K. M. Newaz, Bin Wang, D. Prasai, H. Krzyzanowska D ...
Scientific Reports 4, 6608, 2014
4752014
Characterization of uranium (VI) sorption by organobentonite
M Majdan, S Pikus, A Gajowiak, A Gładysz-Płaska, H Krzyżanowska, ...
Applied Surface Science 256 (17), 5416-5421, 2010
692010
Photoreflectance study of the fundamental optical properties of (Ga, Mn) As epitaxial films
O Yastrubchak, J Żuk, H Krzyżanowska, JZ Domagala, T Andrearczyk, ...
Physical Review B 83 (24), 245201, 2011
392011
Electroluminescence from Er-doped SiO2/nc-Si multilayers under lateral carrier injection
H Krzyżanowska, KS Ni, Y Fu, PM Fauchet
Materials Science and Engineering: B 177 (17), 1547-1550, 2012
262012
Ellipsometric study of refractive index anisotropy in porous silicon
H Krzyżanowska, M Kulik, J Żuk
Journal of luminescence 80 (1-4), 183-186, 1998
231998
Electronic-and band-structure evolution in low-doped (Ga, Mn) As
O Yastrubchak, J Sadowski, H Krzyżanowska, L Gluba, J Żuk, ...
Journal of Applied Physics 114 (5), 2013
212013
Apparatus and methods for probing a material as a function of depth using depth-dependent second harmonic generation
J Garnett, H Krzyzanowska, NH Tolk
US Patent 10,371,668, 2019
182019
Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation
J Żuk, H Krzyżanowska, MJ Clouter, M Bromberek, H Bubert, L Rebohle, ...
Journal of applied physics 96 (9), 4952-4959, 2004
162004
The photoelastic coefficient of H+ implanted GaAs as a function of defect density
A Baydin, H Krzyzanowska, R Gatamov, J Garnett, N Tolk
Scientific Reports 7 (1), 15150, 2017
152017
Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons
A Baydin, H Krzyzanowska, M Dhanunjaya, SVS Nageswara Rao, ...
APL Photonics 1 (3), 2016
142016
Efficient energy transfer between Si nanostructures and Er located at a controlled distance
H Krzyżanowska, Y Fu, KS Ni, PM Fauchet
ACS Photonics 3 (4), 564-570, 2016
142016
Energy-dependent amplitude of Brillouin oscillations in GaP
A Baydin, R Gatamov, H Krzyzanowska, CJ Stanton, N Tolk
Physical Review B 99 (16), 165202, 2019
112019
Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence
H Krzyżanowska, A von Bohlen, R Klockenkämper
Spectrochimica Acta Part B: Atomic Spectroscopy 58 (12), 2059-2067, 2003
112003
Hydrogen and oxygen concentration analysis of porous silicon
H Krzyżanowska, AP Kobzev, J Żuk, M Kulik
Journal of non-crystalline solids 354 (35-39), 4367-4374, 2008
102008
Fluence and wavelength dependent ultrafast differential transmission dynamics in graphene
R Gatamov, A Baydin, H Krzyzanowska, N Tolk
Materials Research Express 7 (9), 095601, 2020
82020
Composition of Ge+ and Si+ implanted SiO2/Si layers: Role of oxides in nanocluster formation
H Krzyżanowska, H Bubert, J Żuk, W Skorupa
Journal of non-crystalline solids 354 (35-39), 4363-4366, 2008
82008
Low temperature diamond growth arising from ultrafast pulsed-laser pretreatment
H Krzyżanowska, WF Paxton, M Yilmaz, A Mayo, J Kozub, M Howell, ...
Carbon 131, 120-126, 2018
72018
Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence
R Klockenkämper, M Becker, A Von Bohlen, HW Becker, H Krzyzanowska, ...
Journal of applied physics 98 (3), 2005
72005
Experimental and theoretical determination of the opto-acoustic spectrum of silicon
HM Lawler, A Steigerwald, J Gregory, H Krzyzanowska, NH Tolk
Materials Research Express 1 (2), 025701, 2014
62014
Strong Er emission from Er doped SiO2/nc-Si multilayers
Y Fu, H Krzyżanowska, K Ni, J LaRose, M Huang, PM Fauchet
7th IEEE International Conference on Group IV Photonics, 305-307, 2010
62010
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