| Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics N Gong, X Sun, H Jiang, KS Chang-Liao, Q Xia, TP Ma Applied Physics Letters 112 (26), 2018 | 103 | 2018 |
| Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method X Sun, OI Saadat, KS Chang-Liao, T Palacios, S Cui, TP Ma Applied Physics Letters 102 (10), 2013 | 94 | 2013 |
| Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition H Ikeda, S Goto, K Honda, M Sakashita, A Sakai, S Zaima, Y Yasuda Japanese journal of applied physics 41 (4S), 2476, 2002 | 52 | 2002 |
| Charge-Trapping-Type Flash Memory Device With Stacked High- Charge-Trapping Layer PH Tsai, KS Chang-Liao, TC Liu, TK Wang, PJ Tzeng, CH Lin, LS Lee, ... IEEE electron device letters 30 (7), 775-777, 2009 | 48 | 2009 |
| Novel SONOS-type nonvolatile memory device with optimal Al doping in HfAlO charge-trapping layer PH Tsai, KS Chang-Liao, CY Liu, TK Wang, PJ Tzeng, CH Lin, LS Lee, ... IEEE electron device letters 29 (3), 265-268, 2008 | 46 | 2008 |
| Twin thin-film transistor nonvolatile memory with an indium–gallium–zinc–oxide floating gate MF Hung, YC Wu, JJ Chang, KS Chang-Liao IEEE Electron Device Letters 34 (1), 75-77, 2012 | 40 | 2012 |
| Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2Stack Gate Dielectric CC Li, KS Chang-Liao, WF Chi, MC Li, TC Chen, TH Su, YW Chang, ... IEEE Electron Device Letters 37 (1), 12-15, 2015 | 38 | 2015 |
| Monitoring the moisture-related degradation of ethylene propylene rubber cable by electrical and SEM methods YT Hsu, KS Chang-Liao, TK Wang, CT Kuo Polymer Degradation and Stability 91 (10), 2357-2364, 2006 | 38 | 2006 |
| Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate CC Yang, SH Chen, JM Shieh, WH Huang, TY Hsieh, CH Shen, TT Wu, ... 2013 IEEE International Electron Devices Meeting, 29.6. 1-29.6. 4, 2013 | 37 | 2013 |
| Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption CC Li, KS Chang-Liao, LJ Liu, TM Lee, CH Fu, TC Chen, JW Cheng, ... IEEE electron device letters 35 (5), 509-511, 2014 | 35 | 2014 |
| Depth profiling of border traps in MOSFET with high-$ kappa $ gate dielectric by charge-pumping technique CY Lu, KS Chang-Liao, PH Tsai, TK Wang IEEE electron device letters 27 (10), 859-862, 2006 | 35 | 2006 |
| A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices CH Fu, KS Chang-Liao, CC Li, ZH Ye, FM Hsu, TK Wang, YJ Lee, MJ Tsai Applied Physics Letters 101 (3), 2012 | 30 | 2012 |
| An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer CH Fu, KS Chang-Liao, LJ Liu, CC Li, TC Chen, JW Cheng, CC Lu IEEE Transactions on Electron Devices 61 (8), 2662-2667, 2014 | 28 | 2014 |
| Correlation between mechanical and electrical properties for assessing the degradation of ethylene propylene rubber cables used in nuclear power plants YT Hsu, KS Chang-Liao, TK Wang, CT Kuo Polymer degradation and stability 92 (7), 1297-1303, 2007 | 28 | 2007 |
| A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect RCJ Wang, CC Lee, LD Chen, K Wu, KS Chang-Liao Microelectronics Reliability 46 (9-11), 1673-1678, 2006 | 27 | 2006 |
| A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric CH Fu, KS Chang-Liao, YA Chang, YY Hsu, TH Tzeng, TK Wang, ... Microelectronic engineering 88 (7), 1309-1311, 2011 | 26 | 2011 |
| Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices CL Cheng, KS Chang-Liao, CH Huang, TK Wang Applied Physics Letters 86 (21), 2005 | 25 | 2005 |
| Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects RCJ Wang, KS Chang-Liao, TK Wang, MN Chang, CS Wang, CH Lin, ... Thin Solid Films 517 (3), 1230-1233, 2008 | 23 | 2008 |
| Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide KS Chang-Liao, HC Lai Applied physics letters 72 (18), 2280-2282, 1998 | 23 | 1998 |
| High Performance Ge pMOSFETs With HfO2/Hf-Cap/GeOxGate Stack and Suitable Post Metal Annealing Treatments SH Yi, KS Chang-Liao, TY Wu, CW Hsu, J Huang IEEE Electron Device Letters 38 (5), 544-547, 2017 | 22 | 2017 |
