| Residual metallic contamination of transferred chemical vapor deposited graphene G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ... ACS nano 9 (5), 4776-4785, 2015 | 325 | 2015 |
| Electrical properties of graphene-metal contacts T Cusati, G Fiori, A Gahoi, V Passi, MC Lemme, A Fortunelli, ... Scientific reports 7 (1), 5109, 2017 | 199 | 2017 |
| Chemical vapor deposited graphene: From synthesis to applications S Kataria, S Wagner, J Ruhkopf, A Gahoi, H Pandey, R Bornemann, ... physica status solidi (a) 211 (11), 2439-2449, 2014 | 125 | 2014 |
| Contact resistance study of various metal electrodes with CVD graphene A Gahoi, S Wagner, A Bablich, S Kataria, V Passi, MC Lemme Solid-State Electronics 125, 234-239, 2016 | 78 | 2016 |
| Ultralow specific contact resistivity in metal–graphene junctions via contact engineering V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ... Advanced Materials Interfaces 6 (1), 1801285, 2019 | 55 | 2019 |
| Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons V Passi, A Gahoi, BV Senkovskiy, D Haberer, FR Fischer, A Grüneis, ... ACS applied materials & interfaces 10 (12), 9900-9903, 2018 | 54 | 2018 |
| On the adequacy of the transmission line model to describe the graphene–metal contact resistance S Venica, F Driussi, A Gahoi, P Palestri, MC Lemme, L Selmi IEEE Transactions on Electron Devices 65 (4), 1589-1596, 2018 | 32 | 2018 |
| Dependable contact related parameter extraction in graphene–metal junctions A Gahoi, S Kataria, F Driussi, S Venica, H Pandey, D Esseni, L Selmi, ... Advanced Electronic Materials 6 (10), 2000386, 2020 | 25 | 2020 |
| Dielectric surface charge engineering for electrostatic doping of graphene S Wittmann, F Aumer, D Wittmann, S Pindl, S Wagner, A Gahoi, E Reato, ... ACS Applied Electronic Materials 2 (5), 1235-1242, 2020 | 18 | 2020 |
| Contact resistance Study of “edge-contacted” metal-graphene interfaces V Passi, A Gahoi, J Ruhkopf, S Kataria, F Vaurette, E Pallecchi, H Happy, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 236-239, 2016 | 17 | 2016 |
| Systematic comparison of metal contacts on CVD graphene A Gahoi, V Passi, S Kataria, S Wagner, A Bablich, MC Lemme 2015 45th European Solid State Device Research Conference (ESSDERC), 184-187, 2015 | 15 | 2015 |
| Improved understanding of metal–graphene contacts F Driussi, S Venica, A Gahoi, A Gambi, P Giannozzi, S Kataria, ... Microelectronic Engineering 216, 111035, 2019 | 14 | 2019 |
| Accurate graphene-metal junction characterization M König, G Ruhl, A Gahoi, S Wittmann, T Preis, JM Batke, I Costina, ... IEEE Journal of the Electron Devices Society 7, 219-226, 2019 | 13 | 2019 |
| Dependability assessment of transfer length method to extract the metal–graphene contact resistance F Driussi, S Venica, A Gahoi, S Kataria, MC Lemme, P Palestri IEEE Transactions on Semiconductor Manufacturing 33 (2), 210-215, 2020 | 12 | 2020 |
| Detailed characterization and critical discussion of series resistance in graphene-metal contacts S Venica, F Driussi, A Gahoi, V Passi, P Palestri, MC Lemme, L Selmi 2017 International Conference of Microelectronic Test Structures (ICMTS), 1-5, 2017 | 9 | 2017 |
| Understanding the nature of metal-graphene contacts: A theoretical and experimental study T Cusati, G Fiori, A Gahoi, V Passi, A Fortunelli, M Lemme, G Iannaccone 2015 IEEE International Electron Devices Meeting (IEDM), 12.7. 1-12.7. 4, 2015 | 9 | 2015 |
| Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method S Venica, F Driussi, A Gahoi, S Kataria, P Palestri, MC Lenirne, L Scimi 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | 7 | 2018 |
| Temperature dependence of contact resistance for gold-graphene contacts A Gahoi, S Kataria, MC Lemme 2017 47th European Solid-State Device Research Conference (ESSDERC), 110-113, 2017 | 7 | 2017 |
| PECVD Al2O3/a‐Si:B as a dopant source and surface passivation J Seiffe, A Gahoi, M Hofmann, J Rentsch, R Preu physica status solidi (a) 210 (8), 1593-1599, 2013 | 7 | 2013 |
| DFT study of graphene doping due to metal contacts P Khakbaz, F Driussi, A Gambi, P Giannozzi, S Venica, D Esseni, A Gaho, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 6 | 2019 |
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHVerified email at eld.rwth-aachen.de
