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Wouter Mortelmans
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MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates
S El Kazzi, W Mortelmans, T Nuytten, J Meersschaut, P Carolan, ...
Journal of Applied Physics 123 (13), 2018
352018
Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling
W Mortelmans, S De Gendt, M Heyns, C Merckling
Applied Materials Today 22, 100975, 2021
332021
Recent advances in 2D material theory, synthesis, properties, and applications
YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi, HM Hill, K Zhang, ...
ACS nano 17 (11), 9694-9747, 2023
322023
On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides
W Mortelmans, A Nalin Mehta, Y Balaji, S Sergeant, R Meng, M Houssa, ...
ACS Applied Materials & Interfaces 12 (24), 27508–27517, 2020
242020
Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces
W Mortelmans, S El Kazzi, AN Mehta, D Vanhaeren, T Conard, ...
Nanotechnology 30 (46), 465601, 2019
232019
Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ...
Nanotechnology 31 (12), 125604, 2020
182020
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
W Mortelmans, AN Mehta, Y Balaji, S El Kazzi, S Sergeant, M Houssa, ...
2D Materials 7 (2), 025027, 2020
162020
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
W Mortelmans, S El Kazzi, B Groven, A Nalin Mehta, Y Balaji, S De Gendt, ...
Applied Physics Letters 117 (3), 033101, 2020
152020
Process integration and future outlook of 2D transistors
KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ...
nature communications 14 (1), 6400, 2023
72023
Atomic-Scale Mechanisms of MoS2 Oxidation for Kinetic Control of MoS2/MoO3 Interfaces
K Reidy, W Mortelmans, SS Jo, AN Penn, AC Foucher, Z Liu, T Cai, ...
Nano Letters 23 (13), 5894-5901, 2023
72023
Kinetic control for planar oxidation of MoS
K Reidy, W Mortelmans, SS Jo, A Penn, B Wang, A Foucher, FM Ross, ...
arXiv preprint arXiv:2211.16789, 2022
32022
Measuring and then eliminating twin domains in SnSe thin films using fast optical metrology and molecular beam epitaxy
W Mortelmans, M Hilse, Q Song, SS Jo, K Ye, D Liu, N Samarth, ...
ACS nano 16 (6), 9472-9478, 2022
32022
Role of Stronger Interlayer van der Waals Coupling in Twin-Free Molecular Beam Epitaxy of 2D Chalcogenides
W Mortelmans, K De Smet, M Ruishen, M Houssa, S De Gendt, M Heyns, ...
Advanced Materials Interfaces, 2100438, 2021
32021
Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling
W Mortelmans, K De Smet, R Meng, M Houssa, S De Gendt, M Heyns, ...
arXiv:2010.04103, 2020
12020
High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling
A Penumatcha, KP O’Brien, K Maxey, W Mortelmans, R Steinhardt, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions
W Mortelmans, S De Gendt, M Heyns, C Merckling
arXiv:2010.04657, 2020
2020
Novel Insights into the Homo-/Heteroepitaxy of van der Waals Materials
W Mortelmans, A Nalin Mehta, Y Balaji, K De Smet, S El Kazzi, M Houssa, ...
2020
Epitaxy of van der Waals Materials: a Fundamental and Exploratory Study Focused on Molecular Beam Epitaxy of WSe2
W Mortelmans
KU Leuven, Imec, 2020
2020
Peculiar alignment and strain behavior of 2D WSe2 monolayers grown by van der Waals epitaxy on engineered sapphire surfaces
W Mortelmans, S El Kazzi, A Nalin Mehta, D Vanhaeren, T Conard, ...
2019
Preferential in-plane alignment, twinning and strain in hetero-and homo-epitaxial growth of 2D selenides
W Mortelmans, A Nalin Mehta, Y Balaji, S El Kazzi, D Vanhaeren, ...
2019
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