| 20–80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec JJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye 2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 2012 | 111 | 2012 |
| Laser sintered graphene nickel nanocomposites Z Hu, G Tong, D Lin, Q Nian, J Shao, Y Hu, M Saeib, S Jin, GJ Cheng Journal of Materials Processing Technology 231, 143-150, 2016 | 79 | 2016 |
| Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free … D Li, L Tang, C Edmunds, J Shao, G Gardner, MJ Manfra, O Malis Applied physics letters 100 (25), 252105, 2012 | 70 | 2012 |
| III-V gate-all-around nanowire MOSFET process technology: From 3D to 4D JJ Gu, XW Wang, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye 2012 International Electron Devices Meeting, 23.7. 1-23.7. 4, 2012 | 68 | 2012 |
| Low-strain quantum dots-in-a-well infrared photodetector RV Shenoi, RS Attaluri, A Siroya, J Shao, YD Sharma, A Stintz, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 67* | 2008 |
| Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells C Edmunds, J Shao, M Shirazi-Hd, MJ Manfra, O Malis Applied Physics Letters 105 (2), 021109, 2014 | 65 | 2014 |
| Resonant cavity enhanced dots-in-a-well quantum dot infrared photodetector RS Attaluri, J Shao, KT Posani, SJ Lee, JS Brown, A Stintz, S Krishna Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 62 | 2007 |
| Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures D Li, J Shao, L Tang, C Edmunds, G Gardner, MJ Manfra, O Malis Semiconductor science and technology 28 (7), 074024, 2013 | 46 | 2013 |
| Asymmetric 3D Elastic–Plastic Strain‐Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking M Motlag, P Kumar, KY Hu, S Jin, J Li, J Shao, X Yi, YH Lin, JC Walrath, ... Advanced Materials 31 (19), 1900597, 2019 | 43 | 2019 |
| Surface morphology evolution of m-plane GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature J Shao, L Tang, C Edmunds, G Gardner, O Malis, M Manfra Journal of Applied Physics 114 (2), 023508, 2013 | 41 | 2013 |
| Direct laser writing of nanodiamond films from graphite under ambient conditions Q Nian, Y Wang, Y Yang, J Li, MY Zhang, J Shao, L Tang, GJ Cheng Scientific reports 4 (1), 1-8, 2014 | 40 | 2014 |
| Ultrafast and scalable laser liquid synthesis of tin oxide nanotubes and its application in lithium ion batteries Z Liu, Z Cao, B Deng, Y Wang, J Shao, P Kumar, CR Liu, B Wei, ... Nanoscale 6 (11), 5853-5858, 2014 | 39 | 2014 |
| Quantum dots-in-a-well focal plane arrays TE Vandervelde, MC Lenz, E Varley, A Barve, J Shao, RV Shenoi, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1150-1161, 2008 | 39 | 2008 |
| Resonant tunneling barriers in quantum dots-in-a-well infrared photodetectors A Barve, J Shao, YD Sharma, TE Vandervelde, K Sankalp, SJ Lee, ... IEEE journal of quantum electronics 46 (7), 1105-1114, 2010 | 38 | 2010 |
| Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector AV Barve, SY Shah, J Shao, TE Vandervelde, RV Shenoi, WY Jang, ... Applied Physics Letters 93 (13), 131115, 2008 | 38 | 2008 |
| Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities C Edmunds, L Tang, M Cervantes, M Shirazi-Hd, J Shao, A Grier, ... Physical Review B 88 (23), 235306, 2013 | 37 | 2013 |
| Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors M Si, JJ Gu, X Wang, J Shao, X Li, MJ Manfra, RG Gordon, PD Ye Applied Physics Letters 102 (9), 093505, 2013 | 35 | 2013 |
| Quasi-ballistic thermal transport in Al0.1Ga0.9N thin film semiconductors YR Koh, MA Shirazi-HD, B Vermeersch, AMS Mohammed, J Shao, ... Applied Physics Letters 109 (24), 243107, 2016 | 33 | 2016 |
| Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices A Grier, A Valavanis, C Edmunds, J Shao, JD Cooper, G Gardner, ... Journal of Applied Physics 118 (22), 224308, 2015 | 32 | 2015 |
| Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location C Edmunds, L Tang, J Shao, D Li, M Cervantes, G Gardner, DN Zakharov, ... Applied Physics Letters 101 (10), 102104, 2012 | 32 | 2012 |
