Richard Floyd
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Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts
X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan
IEEE Electron Device Letters 39 (10), 1568-1571, 2018
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes
R Floyd, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ...
Applied Physics Express 14 (8), 084002, 2021
Photonics integrated circuits using Al x Ga1− x N based UVC light-emitting diodes, photodetectors and waveguides
R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ...
Applied Physics Express 13 (2), 022003, 2020
An opto-thermal study of high brightness 280nm emission AlGaN micropixel light-emitting diode arrays
R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ...
Applied Physics Express, 2020
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric
S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ...
Semiconductor Science and Technology 34 (12), 125001, 2019
Current collapse in high-Al channel AlGaN HFETs
S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ...
Applied Physics Express 12 (7), 074001, 2019
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer …
S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ...
physica status solidi (a) 217 (7), 1900802, 2020
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders
MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ...
Applied Physics Letters 119 (13), 2021
An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices
R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ...
physica status solidi (a) 217 (7), 1900801, 2020
Al0. 64Ga0. 36N channel MOSHFET on single crystal bulk AlN substrate
A Mamun, K Hussain, R Floyd, MDD Alam, MVS Chandrashekhar, ...
Applied Physics Express 16 (6), 061001, 2023
High figure of merit extreme bandgap Al0. 87Ga0. 13N-Al0. 64Ga0. 36N heterostructures over bulk AlN substrates
K Hussain, A Mamun, R Floyd, MD Alam, ME Liao, K Huynh, Y Wang, ...
Applied Physics Express 16 (1), 014005, 2023
High-Performance Interconnects with Reduced Far-End Crosstalk for High-Speed ICs and Communication Systems
J Ge, R Floyd, A Khan, G Wang
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023
Deep-scaling and modular interconnection of deep ultraviolet micro-sized emitters
R Floyd, A Khan, M Gaevski, MVS Chandrashekhar, G Simin
US Patent App. 17/747,351, 2023
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