Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes R Floyd, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ... Applied Physics Express 14 (8), 084002, 2021 | 45 | 2021 |
Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan IEEE Electron Device Letters 39 (10), 1568-1571, 2018 | 41 | 2018 |
Photonics integrated circuits using AlxGa1− xN based UVC light-emitting diodes, photodetectors and waveguides R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ... Applied Physics Express 13 (2), 022003, 2020 | 25 | 2020 |
An opto-thermal study of high brightness 280nm emission AlGaN micropixel light-emitting diode arrays R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ... Applied Physics Express, 2020 | 17 | 2020 |
High figure of merit extreme bandgap Al0. 87Ga0. 13N-Al0. 64Ga0. 36N heterostructures over bulk AlN substrates K Hussain, A Mamun, R Floyd, MD Alam, ME Liao, K Huynh, Y Wang, ... Applied Physics Express 16 (1), 014005, 2023 | 16 | 2023 |
Current collapse in high-Al channel AlGaN HFETs S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ... Applied Physics Express 12 (7), 074001, 2019 | 15 | 2019 |
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ... Semiconductor Science and Technology 34 (12), 125001, 2019 | 14 | 2019 |
Al0. 64Ga0. 36N channel MOSHFET on single crystal bulk AlN substrate A Mamun, K Hussain, R Floyd, MDD Alam, MVS Chandrashekhar, ... Applied Physics Express 16 (6), 061001, 2023 | 13 | 2023 |
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ... physica status solidi (a) 217 (7), 1900802, 2020 | 11 | 2020 |
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ... Applied Physics Letters 119 (13), 2021 | 9 | 2021 |
High-Performance Interconnects with Reduced Far-End Crosstalk for High-Speed ICs and Communication Systems J Ge, R Floyd, A Khan, G Wang IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023 | 8 | 2023 |
An initial study of ultraviolet C optical losses for monolithically integrated AlGaN heterojunction optoelectronic devices R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ... physica status solidi (a) 217 (7), 1900801, 2020 | 5 | 2020 |
Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield AT Binder, JA Cooper, J Steinfeldt, AA Allerman, R Floyd, L Yates, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 5, 100218, 2023 | 3 | 2023 |
Monolithically Integrated> 3kV, 20A 4H-SiC BiDFET Utilizing an Accumulation Mode Channel for Improved Output Characteristics SA Mancini, SY Jang, A Binder, R Floyd, R Kaplar, S Atcitty, AJ Morgan, ... 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | 1 | 2024 |
(Invited) Common Practical Challenges in Characterization of Wide-Bandgap Semiconductors AT Binder, BD Rummel, KJ Reilly, R Floyd, J Steinfeldt, M Negoita, ... Electrochemical Society Meeting Abstracts prime2024, 2510-2510, 2024 | | 2024 |
Investigation on Design Approaches for 4H-SiC Bi-Directional Field Effect Transistors (BiDFETs) SA Mancini, SY Jang, A Binder, R Floyd, R Kaplar, J Flicker, S Atcitty, ... 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2024 | | 2024 |
High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs AT Binder, J Steinfeldt, KJ Reilly, RS Floyd, PT Dickens, JP Klesko, ... Applied Physics Express 17 (10), 101003, 2024 | | 2024 |
Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing BD Rummel, CE Glaser, RT Gurule, M Groves, AT Binder, R Floyd, ... 2024 IEEE International Reliability Physics Symposium (IRPS), P52. RT-1-P52 …, 2024 | | 2024 |
(Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs AT Binder, J Steinfeldt, AA Allerman, CE Glaser, L Yates, R Floyd, ... Electrochemical Society Meeting Abstracts 244, 1679-1679, 2023 | | 2023 |
Deep-scaling and modular interconnection of deep ultraviolet micro-sized emitters R Floyd, A Khan, M Gaevski, MVS Chandrashekhar, G Simin US Patent App. 17/747,351, 2023 | | 2023 |