Mechanisms of growth and defect properties of epitaxial SiC F La Via, M Camarda, A La Magna
Applied Physics Reviews 1 (3), 2014
140 2014 High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ...
Thin Solid Films 518 (6), S165-S169, 2010
73 2010 SiCILIA—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ...
Sensors 18 (7), 2289, 2018
72 2018 Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of Microelectromechanical Systems 20 (3), 745-752, 2011
56 2011 A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures M Camarda, A La Magna, F La Via
Journal of Computational Physics 227 (2), 1075-1093, 2007
55 2007 Defect influence on heteroepitaxial 3C-SiC Young’s modulus R Anzalone, M Camarda, A Canino, N Piluso, F La Via, G D’arrigo
Electrochemical and Solid-State Letters 14 (4), H161, 2011
43 2011 Carbon nanotube-based sensing devices for human Arginase-1 detection S Baldo, S Buccheri, A Ballo, M Camarda, A La Magna, ME Castagna, ...
Sensing and bio-sensing research 7, 168-173, 2016
40 2016 The role of dielectrophoresis for cancer diagnosis and prognosis GI Russo, N Musso, A Romano, G Caruso, S Petralia, L Lanzanò, ...
Cancers 14 (1), 198, 2021
38 2021 Electron backscattering from stacking faults in SiC by means of ab initio quantum transport calculations I Deretzis, M Camarda, F La Via, A La Magna
Physical Review B 85 (23), 235310, 2012
36 2012 3C-SiC film growth on Si substrates A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ...
ECS Transactions 35 (6), 99, 2011
35 2011 Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via
Journal of crystal growth 310 (5), 971-975, 2008
35 2008 Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111) Si A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, ...
Applied physics letters 94 (10), 2009
34 2009 Two-dimensional defect mapping of the interface J Woerle, BC Johnson, C Bongiorno, K Yamasue, G Ferro, D Dutta, ...
Physical Review Materials 3 (8), 084602, 2019
31 2019 Structural and electronic characterization of (2, 33) bar-shaped stacking fault in 4H-SiC epitaxial layers M Camarda, A Canino, A La Magna, F La Via, G Feng, T Kimoto, M Aoki, ...
Applied physics letters 98 (5), 2011
31 2011 Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC M Camarda, A La Magna, A Severino, F La Via
Thin Solid Films 518 (6), S159-S161, 2010
29 2010 Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, ...
Applied Physics Letters 95 (11), 2009
27 2009 Gaussian effective potential and superconductivity M Camarda, GGN Angilella, R Pucci, F Siringo
The European Physical Journal B-Condensed Matter and Complex Systems 33, 273-277, 2003
27 2003 Optically Active Defects at the Interface BC Johnson, J Woerle, D Haasmann, CTK Lew, RA Parker, H Knowles, ...
Physical Review Applied 12 (4), 044024, 2019
24 2019 Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices A La Magna, M Camarda, I Deretzis, G Fisicaro, S Coffa
Applied Physics Letters 100 (13), 2012
24 2012 First principles investigation on the modifications of the 4H-SiC band structure due to the (4, 4) and (3, 5) stacking faults M Camarda, A La Magna, P Delugas, F La Via
Applied physics express 4 (2), 025802, 2011
24 2011