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Iftikhar Ahmad
Iftikhar Ahmad
Verified email at cec.sc.edu
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Cited by
Year
Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon
A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ...
IEEE Sensors Journal 3 (6), 788-795, 2003
1312003
Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates
I Ahmad, M Holtz, NN Faleev, H Temkin
Journal of applied physics 95 (4), 1692-1697, 2004
1292004
Self-heating study of an AlGaN∕ GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, ...
Applied Physics Letters 86 (17), 2005
1002005
Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition
G Kipshidze, B Yavich, A Chandolu, J Yun, V Kuryatkov, I Ahmad, ...
Applied Physics Letters 86 (3), 2005
932005
276 nm substrate-free flip-chip AlGaN light-emitting diodes
S Hwang, D Morgan, A Kesler, M Lachab, B Zhang, A Heidari, H Nazir, ...
Applied physics express 4 (3), 032102, 2011
662011
Deep ultraviolet light emitting diodes based on short period superlattices of AlN/AlGa (In) N
SA Nikishin, VV Kuryatkov, A Chandolu, BA Borisov, GD Kipshidze, ...
Japanese journal of applied physics 42 (11B), L1362, 2003
642003
Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations
I Ahmad, V Kasisomayajula, DY Song, L Tian, JM Berg, M Holtz
Journal of applied physics 100 (11), 2006
432006
Depth dependence of defect density and stress in GaN grown on SiC
N Faleev, H Temkin, I Ahmad, M Holtz, Y Melnik
Journal of applied physics 98 (12), 2005
422005
Optical properties of a nanoporous array in silicon
L Tian, KB Ram, I Ahmad, L Menon, M Holtz
Journal of applied physics 97 (2), 2005
412005
MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters
K Balakrishnan, M Lachab, HC Chen, D Blom, V Adivarahan, I Ahmad, ...
physica status solidi (a) 208 (12), 2724-2729, 2011
292011
Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes
M Lachab, F Asif, B Zhang, I Ahmad, A Heidari, Q Fareed, V Adivarahan, ...
Solid-state electronics 89, 156-160, 2013
262013
Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates
F Asif, M Lachab, A Coleman, I Ahmad, B Zhang, V Adivarahan, A Khan
Journal of Vacuum Science & Technology B 32 (6), 2014
182014
Substrate lifted-off AlGaN/AlGaN lateral conduction thin-film light-emitting diodes operating at 285 nm
F Asif, HC Chen, A Coleman, M Lachab, I Ahmad, B Zhang, Q Fareed, ...
Japanese Journal of Applied Physics 52 (8S), 08JG14, 2013
182013
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric
S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ...
Semiconductor Science and Technology 34 (12), 125001, 2019
142019
Optically-pumped 285 nm edge stimulated emission from AlGaN-based LED structures grown by MOCVD on sapphire substrates
M Lachab, F Asif, A Coleman, I Ahmad, B Zhang, V Adivarahan, A Khan
Japanese Journal of Applied Physics 53 (11), 112101, 2014
142014
Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate
S Hasan, A Mamun, K Hussain, M Gaevski, I Ahmad, A Khan
Journal of Materials Research 36, 4360-4369, 2021
132021
Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes
I Ahmad, B Krishnan, B Zhang, Q Fareed, M Lachab, J Dion, A Khan
physica status solidi (a) 208 (7), 1501-1503, 2011
112011
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer …
S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ...
physica status solidi (a) 217 (7), 1900802, 2020
102020
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer …
S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ...
physica status solidi (a) 217 (7), 1900802, 2020
102020
Pseudomorphic AlxGa1‐xN MQW based deep ultraviolet light emitting diodes over sapphire
F Asif, HC Chen, A Coleman, I Ahmad, B Zhang, J Dion, A Heidari, ...
physica status solidi (c) 11 (3‐4), 798-801, 2014
102014
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