Xuezhe Yu
Xuezhe Yu
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Controlled synthesis of phase-pure InAs nanowires on Si (111) by diminishing the diameter to 10 nm
D Pan, M Fu, X Yu, X Wang, L Zhu, S Nie, S Wang, Q Chen, P Xiong, ...
Nano letters 14 (3), 1214-1220, 2014
Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires
X Yu, H Wang, J Lu, J Zhao, J Misuraca, P Xiong, S von Molnár
Nano letters 12 (10), 5436-5442, 2012
Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy
L Li, D Pan, Y Xue, X Wang, M Lin, D Su, Q Zhang, X Yu, H So, D Wei, ...
Nano letters 17 (2), 622-630, 2017
Free-standing two-dimensional single-crystalline InSb nanosheets
D Pan, DX Fan, N Kang, JH Zhi, XZ Yu, HQ Xu, JH Zhao
Nano letters 16 (2), 834-841, 2016
Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs
SH Nie, LJ Zhu, J Lu, D Pan, HL Wang, XZ Yu, JX Xiao, JH Zhao
Applied Physics Letters 102 (15), 2013
All zinc-blende GaAs/(Ga, Mn) As core–shell nanowires with ferromagnetic ordering
X Yu, H Wang, D Pan, J Zhao, J Misuraca, S von Molnár, P Xiong
Nano letters 13 (4), 1572-1577, 2013
Robust manipulation of magnetism in dilute magnetic semiconductor (Ga, Mn) As by organic molecules
X Wang, H Wang, D Pan, L Li, X Yu, J Lu, J Zhao, T Keiper, E Lochner, ...
2016 IEEE International Nanoelectronics Conference (INEC), 1-3, 2016
Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy
X Yu, L Li, H Wang, J Xiao, C Shen, D Pan, J Zhao
Nanoscale 8 (20), 10615-10621, 2016
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)
K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ...
Advanced Optical Materials 8 (22), 2000970, 2020
Growth and fabrication of high‐quality single nanowire devices with radial p‐i‐n junctions
Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ...
Small 15 (3), 1803684, 2019
III–V ternary nanowires on Si substrates: growth, characterization and device applications
G Boras, X Yu, H Liu
Journal of Semiconductors 40 (10), 101301, 2019
Quantitative determination of the Mn site distribution in ultrathin As layers with high critical temperatures: A Rutherford backscattering channeling …
D Benzeggouta, K Khazen, I Vickridge, HJ Von Bardeleben, L Chen, ...
Physical Review B 89 (11), 115323, 2014
Preferred growth direction of III–V nanowires on differently oriented Si substrates
H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ...
Nanotechnology 31 (47), 475708, 2020
Bias current dependence of the spin lifetime in insulating Al0. 3Ga0. 7As
J Misuraca, JI Kim, J Lu, K Meng, L Chen, X Yu, J Zhao, P Xiong, ...
Applied Physics Letters 104 (8), 2014
Optimizing GaAs nanowire-based visible-light photodetectors
X Li, X Yu, H Zeng, G Boras, K Shen, Y Zhang, J Wu, KL Choy, H Liu
Applied Physics Letters 119 (5), 2021
Self-catalyzed AlGaAs nanowires and AlGaAs/GaAs nanowire-quantum dots on Si substrates
G Boras, X Yu, HA Fonseka, G Davis, AV Velichko, JA Gott, H Zeng, S Wu, ...
The Journal of Physical Chemistry C 125 (26), 14338-14347, 2021
Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants
XY Chen, Y Gu, YJ Ma, SM Chen, MC Tang, YY Zhang, XZ Yu, P Wang, ...
Materials Research Express 6 (1), 015046, 2018
Magnetic properties of Fe0. 4Mn0. 6/Co2FeAl bilayers grown on GaAs by molecular-beam epitaxy
KK Meng, SH Nie, XZ Yu, SL Wang, WS Yan, JH Zhao
Journal of Applied Physics 110 (9), 2011
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates
J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ...
Nanoscale 14 (46), 17247-17253, 2022
Hybrid III–V/IV nanowires: high-quality Ge shell epitaxy on GaAs cores
H Zeng, X Yu, HA Fonseka, JA Gott, M Tang, Y Zhang, G Boras, J Xu, ...
Nano Letters 18 (10), 6397-6403, 2018
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