Seguir
Xuezhe Yu
Xuezhe Yu
Afiliación desconocida
Dirección de correo verificada de ucl.ac.uk
Título
Citado por
Citado por
Año
Controlled synthesis of phase-pure InAs nanowires on Si (111) by diminishing the diameter to 10 nm
D Pan, M Fu, X Yu, X Wang, L Zhu, S Nie, S Wang, Q Chen, P Xiong, ...
Nano letters 14 (3), 1214-1220, 2014
1192014
Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires
X Yu, H Wang, J Lu, J Zhao, J Misuraca, P Xiong, S von Molnár
Nano letters 12 (10), 5436-5442, 2012
992012
Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy
L Li, D Pan, Y Xue, X Wang, M Lin, D Su, Q Zhang, X Yu, H So, D Wei, ...
Nano letters 17 (2), 622-630, 2017
842017
Free-standing two-dimensional single-crystalline InSb nanosheets
D Pan, DX Fan, N Kang, JH Zhi, XZ Yu, HQ Xu, JH Zhao
Nano letters 16 (2), 834-841, 2016
832016
Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs
SH Nie, LJ Zhu, J Lu, D Pan, HL Wang, XZ Yu, JX Xiao, JH Zhao
Applied Physics Letters 102 (15), 2013
822013
All zinc-blende GaAs/(Ga, Mn) As core–shell nanowires with ferromagnetic ordering
X Yu, H Wang, D Pan, J Zhao, J Misuraca, S von Molnár, P Xiong
Nano letters 13 (4), 1572-1577, 2013
462013
Robust manipulation of magnetism in dilute magnetic semiconductor (Ga, Mn) As by organic molecules
X Wang, H Wang, D Pan, L Li, X Yu, J Lu, J Zhao, T Keiper, E Lochner, ...
2016 IEEE International Nanoelectronics Conference (INEC), 1-3, 2016
312016
Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy
X Yu, L Li, H Wang, J Xiao, C Shen, D Pan, J Zhao
Nanoscale 8 (20), 10615-10621, 2016
262016
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)
K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ...
Advanced Optical Materials 8 (22), 2000970, 2020
252020
Growth and fabrication of high‐quality single nanowire devices with radial p‐i‐n junctions
Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ...
Small 15 (3), 1803684, 2019
192019
III–V ternary nanowires on Si substrates: growth, characterization and device applications
G Boras, X Yu, H Liu
Journal of Semiconductors 40 (10), 101301, 2019
152019
Quantitative determination of the Mn site distribution in ultrathin As layers with high critical temperatures: A Rutherford backscattering channeling …
D Benzeggouta, K Khazen, I Vickridge, HJ Von Bardeleben, L Chen, ...
Physical Review B 89 (11), 115323, 2014
102014
Preferred growth direction of III–V nanowires on differently oriented Si substrates
H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ...
Nanotechnology 31 (47), 475708, 2020
92020
Bias current dependence of the spin lifetime in insulating Al0. 3Ga0. 7As
J Misuraca, JI Kim, J Lu, K Meng, L Chen, X Yu, J Zhao, P Xiong, ...
Applied Physics Letters 104 (8), 2014
82014
Optimizing GaAs nanowire-based visible-light photodetectors
X Li, X Yu, H Zeng, G Boras, K Shen, Y Zhang, J Wu, KL Choy, H Liu
Applied Physics Letters 119 (5), 2021
72021
Self-catalyzed AlGaAs nanowires and AlGaAs/GaAs nanowire-quantum dots on Si substrates
G Boras, X Yu, HA Fonseka, G Davis, AV Velichko, JA Gott, H Zeng, S Wu, ...
The Journal of Physical Chemistry C 125 (26), 14338-14347, 2021
72021
Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants
XY Chen, Y Gu, YJ Ma, SM Chen, MC Tang, YY Zhang, XZ Yu, P Wang, ...
Materials Research Express 6 (1), 015046, 2018
72018
Magnetic properties of Fe0. 4Mn0. 6/Co2FeAl bilayers grown on GaAs by molecular-beam epitaxy
KK Meng, SH Nie, XZ Yu, SL Wang, WS Yan, JH Zhao
Journal of Applied Physics 110 (9), 2011
72011
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates
J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ...
Nanoscale 14 (46), 17247-17253, 2022
62022
Hybrid III–V/IV nanowires: high-quality Ge shell epitaxy on GaAs cores
H Zeng, X Yu, HA Fonseka, JA Gott, M Tang, Y Zhang, G Boras, J Xu, ...
Nano Letters 18 (10), 6397-6403, 2018
62018
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20