| Dynamic behavior of the triboelectric charges and structural optimization of the friction layer for a triboelectric nanogenerator N Cui, L Gu, Y Lei, J Liu, Y Qin, X Ma, Y Hao, ZL Wang ACS nano 10 (6), 6131-6138, 2016 | 323 | 2016 |
| Physically Transient Resistive Switching Memory Based on Silk Protein. H Wang, B Zhu, X Ma, Y Hao, X Chen Small (Weinheim an der Bergstrasse, Germany) 12 (20), 2715-2719, 2016 | 161 | 2016 |
| High-performance microwave gate-recessed AlGaN/AlN/GaN MOS-HEMT with 73% power-added efficiency Y Hao, L Yang, X Ma, J Ma, M Cao, C Pan, C Wang, J Zhang IEEE Electron Device Letters 32 (5), 626-628, 2011 | 159 | 2011 |
| Electroless plating of highly efficient bifunctional boride‐based electrodes toward practical overall water splitting W Hao, R Wu, R Zhang, Y Ha, Z Chen, L Wang, Y Yang, X Ma, D Sun, ... Advanced Energy Materials 8 (26), 1801372, 2018 | 134 | 2018 |
| NaCl-assisted one-step growth of MoS2–WS2 in-plane heterostructures Z Wang, Y Xie, H Wang, R Wu, T Nan, Y Zhan, J Sun, T Jiang, Y Zhao, ... Nanotechnology 28 (32), 325602, 2017 | 118 | 2017 |
| Fabrication of practical catalytic electrodes using insulating and eco-friendly substrates for overall water splitting W Hao, R Wu, H Huang, X Ou, L Wang, D Sun, X Ma, Y Guo Energy & Environmental Science 13 (1), 102-110, 2020 | 111 | 2020 |
| Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin. H Wang, B Zhu, X Ma, Y Hao, X Chen Small (Weinheim an der Bergstrasse, Germany) 12 (25), 3360-3365, 2016 | 111 | 2016 |
| Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique XH Ma, JJ Zhu, XY Liao, T Yue, WW Chen, Y Hao Applied Physics Letters 103 (3), 2013 | 107 | 2013 |
| Electronic devices for human‐machine interfaces H Wang, X Ma, Y Hao Advanced Materials Interfaces 4 (4), 1600709, 2017 | 92 | 2017 |
| Thickness-induced structural phase transformation of layered gallium telluride Q Zhao, T Wang, Y Miao, F Ma, Y Xie, X Ma, Y Gu, J Li, J He, B Chen, S Xi, ... Physical Chemistry Chemical Physics 18 (28), 18719-18726, 2016 | 92 | 2016 |
| Recent progress in synthesis of two-dimensional hexagonal boron nitride H Wang, Y Zhao, Y Xie, X Ma, X Zhang Journal of Semiconductors 38 (3), 031003, 2017 | 88 | 2017 |
| Performance enhancement of planar heterojunction perovskite solar cells through tuning the doping properties of hole-transporting materials H Xi, S Tang, X Ma, J Chang, D Chen, Z Lin, P Zhong, H Wang, C Zhang ACS omega 2 (1), 326-336, 2017 | 87 | 2017 |
| Improved interface and transport properties of AlGaN/GaN MIS-HEMTs with PEALD-grown AlN gate dielectric JJ Zhu, XH Ma, Y Xie, B Hou, WW Chen, JC Zhang, Y Hao IEEE Transactions on Electron Devices 62 (2), 512-518, 2014 | 87 | 2014 |
| Fabrication of normally off AlGaN/GaN MOSFET using a self-terminating gate recess etching technique Z Xu, J Wang, Y Liu, J Cai, J Liu, M Wang, M Yu, B Xie, W Wu, X Ma, ... IEEE electron device letters 34 (7), 855-857, 2013 | 87 | 2013 |
| Controllable growth of monolayer MoS2 by chemical vapor deposition via close MoO2 precursor for electrical and optical applications Y Xie, Z Wang, Y Zhan, P Zhang, R Wu, T Jiang, S Wu, H Wang, Y Zhao, ... Nanotechnology 28 (8), 084001, 2017 | 86 | 2017 |
| A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors B Dang, Q Wu, F Song, J Sun, M Yang, X Ma, H Wang, Y Hao Nanoscale 10 (43), 20089-20095, 2018 | 83 | 2018 |
| Recent progress of integrated circuits and optoelectronic chips Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ... Science China Information Sciences 64 (10), 201401, 2021 | 81 | 2021 |
| A skin-inspired artificial mechanoreceptor for tactile enhancement and integration F Li, R Wang, C Song, M Zhao, H Ren, S Wang, K Liang, D Li, X Ma, ... ACS nano 15 (10), 16422-16431, 2021 | 78 | 2021 |
| Broadband high-performance microwave absorption of the single-layer Ti3C2Tx MXene X Zhou, J Wen, Z Wang, X Ma, H Wu Journal of Materials Science & Technology 115, 148-155, 2022 | 68 | 2022 |
| Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors L Lv, JG Ma, YR Cao, JC Zhang, W Zhang, L Li, SR Xu, XH Ma, XT Ren, ... Microelectronics Reliability 51 (12), 2168-2172, 2011 | 67 | 2011 |
Jiejie ZhuXidian UniversityDirección de correo verificada de mail.xidian.edu.cn
