Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics T Georgiou, R Jalil, BD Belle, L Britnell, RV Gorbachev, SV Morozov, ... Nature nanotechnology 8 (2), 100-103, 2013 | 1778 | 2013 |
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement GW Mudd, SA Svatek, T Ren, A Patanč, O Makarovsky, L Eaves, ... Advanced Materials 25 (40), 5714-5718, 2013 | 585 | 2013 |
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures A Mishchenko, JS Tu, Y Cao, RV Gorbachev, JR Wallbank, ... Nature nanotechnology 9 (10), 808-813, 2014 | 459 | 2014 |
High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures GW Mudd, SA Svatek, L Hague, O Makarovsky, ZR Kudrynskyi, CJ Mellor, ... Advanced Materials 27 (25), 3760-3766, 2015 | 336 | 2015 |
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals GW Mudd, MR Molas, X Chen, V Zólyomi, K Nogajewski, ZR Kudrynskyi, ... Scientific reports 6 (1), 39619, 2016 | 175 | 2016 |
Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors EE Vdovin, A Mishchenko, MT Greenaway, MJ Zhu, D Ghazaryan, A Misra, ... Physical review letters 116 (18), 186603, 2016 | 92 | 2016 |
Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation N Balakrishnan, ZR Kudrynskyi, EF Smith, MW Fay, O Makarovsky, ... 2D Materials 4 (2), 025043, 2017 | 88 | 2017 |
Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions N Balakrishnan, ZR Kudrynskyi, MW Fay, GW Mudd, SA Svatek, ... Advanced Optical Materials 2 (11), 1064-1069, 2014 | 87 | 2014 |
Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor NV Kozlova, N Mori, O Makarovsky, L Eaves, QD Zhuang, A Krier, ... Nature Communications 3 (1), 1097, 2012 | 84 | 2012 |
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport N Balakrishnan, CR Staddon, EF Smith, J Stec, D Gay, GW Mudd, ... 2D Materials 3 (2), 025030, 2016 | 82 | 2016 |
Resonant tunnelling between the chiral Landau states of twisted graphene lattices MT Greenaway, EE Vdovin, A Mishchenko, O Makarovsky, A Patanč, ... Nature Physics 11 (12), 1057-1062, 2015 | 78 | 2015 |
Quantum confined acceptors and donors in InSe nanosheets GW Mudd, A Patanč, ZR Kudrynskyi, MW Fay, O Makarovsky, L Eaves, ... Applied Physics Letters 105 (22), 221909, 2014 | 73 | 2014 |
Ligand‐Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor L Turyanska, O Makarovsky, SA Svatek, PH Beton, CJ Mellor, A Patanč, ... Advanced Electronic Materials 1 (7), 1500062, 2015 | 69 | 2015 |
Controlling high-frequency collective electron dynamics via single-particle complexity N Alexeeva, MT Greenaway, AG Balanov, O Makarovsky, A Patanč, ... Physical Review Letters 109 (2), 024102, 2012 | 48 | 2012 |
Microscopic analysis of the valence band and impurity band theories of (Ga, Mn) As J Mašek, F Máca, J Kudrnovský, O Makarovsky, L Eaves, RP Campion, ... Physical review letters 105 (22), 227202, 2010 | 48 | 2010 |
Giant quantum hall plateau in graphene coupled to an InSe van der Waals crystal ZR Kudrynskyi, MA Bhuiyan, O Makarovsky, JDG Greener, EE Vdovin, ... Physical Review Letters 119 (15), 157701, 2017 | 47 | 2017 |
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ... physica status solidi (c), 2389-2392, 2003 | 46 | 2003 |
Universal mobility characteristics of graphene originating from charge scattering by ionised impurities JH Gosling, O Makarovsky, F Wang, ND Cottam, MT Greenaway, ... Communications Physics 4 (1), 30, 2021 | 40 | 2021 |
High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga, Mn) As M Wang, KW Edmonds, BL Gallagher, AW Rushforth, O Makarovsky, ... Physical Review B 87 (12), 121301, 2013 | 40 | 2013 |
Tunnel spectroscopy of localised electronic states in hexagonal boron nitride MT Greenaway, EE Vdovin, D Ghazaryan, A Misra, A Mishchenko, Y Cao, ... Communications physics 1 (1), 94, 2018 | 39 | 2018 |