Qhalid  Fareed
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Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ...
Applied physics letters 80 (19), 3542-3544, 2002
AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
HM Wang, JP Zhang, CQ Chen, Q Fareed, JW Yang, MA Khan
Applied physics letters 81 (4), 604-606, 2002
Pulsed atomic-layer epitaxy of ultrahigh-quality structures for deep ultraviolet emissions below 230 nm
JP Zhang, MA Khan, WH Sun, HM Wang, CQ Chen, Q Fareed, E Kuokstis, ...
Applied Physics Letters 81 (23), 4392-4394, 2002
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
GaN homoepitaxy on freestanding oriented GaN substrates
CQ Chen, ME Gaevski, WH Sun, E Kuokstis, JP Zhang, RSQ Fareed, ...
Applied physics letters 81 (17), 3194-3196, 2002
Pulsed atomic layer epitaxy of quaternary AlInGaN layers
J Zhang, E Kuokstis, Q Fareed, H Wang, J Yang, G Simin, MA Khan, ...
Applied Physics Letters 79 (7), 925-927, 2001
Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
Z Chen, RS Qhalid Fareed, M Gaevski, V Adivarahan, JW Yang, A Khan, ...
Applied physics letters 89 (8), 2006
Etching a nitride-based heterostructure
R Gaska, X Hu, Q Fareed, M Shur
US Patent 7,429,534, 2008
High-Temperature Performance of AlGaN/GaN MOSHEMT With Gate Insulator Fabricated on Si (111) Substrate
F Husna, M Lachab, M Sultana, V Adivarahan, Q Fareed, A Khan
IEEE Transactions on Electron Devices 59 (9), 2424-2429, 2012
Near-band-edge photoluminescence of wurtzite-type AlN
E Kuokstis, J Zhang, Q Fareed, JW Yang, G Simin, MA Khan, R Gaska, ...
Applied Physics Letters 81 (15), 2755-2757, 2002
High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
RSQ Fareed, R Jain, R Gaska, MS Shur, J Wu, W Walukiewicz, MA Khan
Applied physics letters 84 (11), 1892-1894, 2004
Methods of growing nitride-based film using varying pulses
Q Fareed, R Gaska, M Shur
US Patent 7,192,849, 2007
V-shaped defects in InGaN/GaN multiquantum wells
S Mahanty, M Hao, T Sugahara, RSQ Fareed, Y Morishima, Y Naoi, ...
Materials Letters 41 (2), 67-71, 1999
AlGaN layers grown on GaN using strain-relief interlayers
CQ Chen, JP Zhang, ME Gaevski, HM Wang, WH Sun, RSQ Fareed, ...
Applied physics letters 81 (26), 4961-4963, 2002
276 nm substrate-free flip-chip AlGaN light-emitting diodes
S Hwang, D Morgan, A Kesler, M Lachab, B Zhang, A Heidari, H Nazir, ...
Applied physics express 4 (3), 032102, 2011
Band-edge luminescence in quaternary AlInGaN light-emitting diodes
M Shatalov, A Chitnis, V Adivarahan, A Lunev, J Zhang, JW Yang, ...
Applied Physics Letters 78 (6), 817-819, 2001
Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition
RS Qhalid Fareed, JW Yang, J Zhang, V Adivarahan, V Chaturvedi, ...
Applied Physics Letters 77 (15), 2343-2345, 2000
Utlraviolet light emitting devices and methods of fabrication
MA Khan, Q Fareed, V Adivarahan
US Patent 9,331,240, 2016
Air-bridged lateral growth of crack-free on highly relaxed porous GaN
RSQ Fareed, V Adivarahan, CQ Chen, S Rai, E Kuokstis, JW Yang, ...
Applied physics letters 84 (5), 696-698, 2004
Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes
JP Zhang, V Adivarahan, HM Wang, Q Fareed, E Kuokstis, A Chitnis, ...
Japanese Journal of Applied Physics 40 (9A), L921, 2001
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