| Substrate support apparatus having reduced substrate particle generation P Agarwal, SM Suh, G Mori, SV Sansoni | 457 | 2020 |
| Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer J Abel, P Agarwal, R Phillips, P Kumar, A Lavoie US Patent 10,269,559, 2019 | 370 | 2019 |
| Sectional modeling of nanoparticle size and charge distributions in dusty plasmas P Agarwal, SL Girshick Plasma Sources Science and Technology 21 (5), 055023, 2012 | 66 | 2012 |
| Numerical Modeling of an RF Argon–Silane Plasma with Dust Particle Nucleation and Growth P Agarwal, SL Girshick Plasma Chemistry and Plasma Processing 34 (3), 489-503, 2014 | 60 | 2014 |
| Homogeneous nucleation with magic numbers: Aluminum SL Girshick, P Agarwal, DG Truhlar The Journal of chemical physics 131 (13), 2009 | 47 | 2009 |
| Atomic layer etch methods and hardware for patterning applications P Agarwal, P Kumar, A Lavoie US Patent 9,997,371, 2018 | 33 | 2018 |
| Atomic layer etch, reactive precursors and energetic sources for patterning applications A Lavoie, P Agarwal, P Kumar US Patent 10,832,909, 2020 | 27 | 2020 |
| Atomic layer clean for removal of photoresist patterning scum P Agarwal, P Kumar, A Lavoie US Patent 10,494,715, 2019 | 15 | 2019 |
| Substrate transfer robot end effector P Agarwal, D Greenberg, SM Suh, J Brodine, SV Sansoni, G Mori US Patent 9,425,076, 2016 | 15 | 2016 |
| Cleaning of chamber components with solid carbon dioxide particles SM Suh, Y Guo, G Xuan, P Agarwal US Patent 9,925,639, 2018 | 11 | 2018 |
| Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation C Qu, Y Sakiyama, P Agarwal, MJ Kushner Journal of Vacuum Science & Technology A 39 (5), 2021 | 9 | 2021 |
| Chemical kinetics of photoinduced chemical vapor deposition: silica coating of gas-phase nanoparticles AM Boies, S Calder, P Agarwal, P Lei, SL Girshick The Journal of Physical Chemistry C 116 (1), 104-114, 2012 | 7 | 2012 |
| Conical wafer centering and holding device for semiconductor processing P Agarwal, I Karim, P Kumar, A Lavoie, SJ Kim, P Breiling US Patent 10,655,224, 2020 | 6 | 2020 |
| Method of providing a plasma atomic layer deposition P Agarwal, P Kumar, A Lavoie US Patent App. 15/974,500, 2019 | 5 | 2019 |
| Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer JR Abel, P Agarwal, R Phillips, P Kumar, A Lavoie US Patent 10,658,172, 2020 | 4 | 2020 |
| Numerical modeling of plasmas in which nanoparticles nucleate and grow P Agarwal University of Minnesota, 2012 | 4 | 2012 |
| Multi zone substrate support for ALD film property correction and tunability MP Roberts, R Chandrasekharan, P Agarwal, A Bingham, A Saurabh, ... US Patent 11,236,422, 2022 | 3 | 2022 |
| Numerical simulations of nanodusty RF plasmas P Agarwal, SL Girshick IEEE Transactions on Plasma Science 39 (11), 2760-2761, 2011 | 3 | 2011 |
| Temperature control of a multi-zone pedestal R Chandrasekharan, MP Roberts, A Bingham, A Saurabh, A Lavoie, ... US Patent App. 17/620,552, 2022 | 2 | 2022 |
| Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes R Chandrasekharan, MP Roberts, P Agarwal, A Lavoie, R Kumar, ... US Patent 12,071,689, 2024 | 1 | 2024 |
Ranganathan GopalakrishnanThe University of MemphisVerified email at memphis.edu
