| Transparent, conductive carbon nanotube films Z Wu, Z Chen, X Du, JM Logan, J Sippel, M Nikolou, K Kamaras, ... Science 305 (5688), 1273-1276, 2004 | 3657 | 2004 |
| Carbon-based electronics P Avouris, Z Chen, V Perebeinos Nature nanotechnology 2 (10), 605-615, 2007 | 2992 | 2007 |
| Graphene nano-ribbon electronics Z Chen, YM Lin, MJ Rooks, P Avouris Physica E: Low-dimensional Systems and Nanostructures 40 (2), 228-232, 2007 | 1895 | 2007 |
| The role of metal− nanotube contact in the performance of carbon nanotube field-effect transistors Z Chen, J Appenzeller, J Knoch, Y Lin, P Avouris Nano letters 5 (7), 1497-1502, 2005 | 848 | 2005 |
| An integrated logic circuit assembled on a single carbon nanotube Z Chen, J Appenzeller, YM Lin, J Sippel-Oakley, AG Rinzler, J Tang, ... Science 311 (5768), 1735-1735, 2006 | 728 | 2006 |
| Energy dissipation in graphene field-effect transistors M Freitag, M Steiner, Y Martin, V Perebeinos, Z Chen, JC Tsang, ... Nano letters 9 (5), 1883-1888, 2009 | 469 | 2009 |
| Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design J Appenzeller, YM Lin, J Knoch, Z Chen, P Avouris IEEE Transactions on Electron Devices 52 (12), 2568-2576, 2005 | 424 | 2005 |
| Length scaling of carbon nanotube transistors AD Franklin, Z Chen Nature nanotechnology 5 (12), 858-862, 2010 | 423 | 2010 |
| Bulk separative enrichment in metallic or semiconducting single-walled carbon nanotubes Z Chen, X Du, MH Du, CD Rancken, HP Cheng, AG Rinzler Nano Letters 3 (9), 1245-1249, 2003 | 341 | 2003 |
| Electrical observation of subband formation in graphene nanoribbons YM Lin, V Perebeinos, Z Chen, P Avouris Physical Review B 78 (16), 161409, 2008 | 265 | 2008 |
| Enhanced electrical and thermal conduction in graphene-encapsulated copper nanowires R Mehta, S Chugh, Z Chen Nano letters 15 (3), 2024-2030, 2015 | 208 | 2015 |
| Electrically Tunable Bandgaps in Bilayer MoS2 T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen Nano letters 15 (12), 8000-8007, 2015 | 181 | 2015 |
| High-performance dual-gate carbon nanotube FETs with 40-nm gate length YM Lin, J Appenzeller, Z Chen, ZG Chen, HM Cheng, P Avouris IEEE Electron device letters 26 (11), 823-825, 2005 | 177 | 2005 |
| Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes YM Lin, J Appenzeller, J Knoch, Z Chen, P Avouris Nano letters 6 (5), 930-936, 2006 | 164 | 2006 |
| Length sorting cut single wall carbon nanotubes by high performance liquid chromatography E Farkas, ME Anderson, Z Chen, AG Rinzler Chemical Physics Letters 363 (1-2), 111-116, 2002 | 162 | 2002 |
| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 157 | 2021 |
| Externally assembled gate-all-around carbon nanotube field-effect transistor Z Chen, D Farmer, S Xu, R Gordon, P Avouris, J Appenzeller IEEE electron device letters 29 (2), 183-185, 2008 | 152 | 2008 |
| Single wall carbon nanotubes for p-type ohmic contacts to GaN light-emitting diodes K Lee, Z Wu, Z Chen, F Ren, SJ Pearton, AG Rinzler Nano Letters 4 (5), 911-914, 2004 | 149 | 2004 |
| Decoupling graphene from SiC (0001) via oxidation S Oida, FR McFeely, JB Hannon, RM Tromp, M Copel, Z Chen, Y Sun, ... Physical Review B 82 (4), 041411, 2010 | 143 | 2010 |
| Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors C Dimitrakopoulos, YM Lin, A Grill, DB Farmer, M Freitag, Y Sun, SJ Han, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010 | 138 | 2010 |
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
