Gunther Lippert

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Jaroslaw DabrowskiIHPVerified email at ihp-microelectronics.com
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinVerified email at ikz-berlin.de
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsVerified email at ihp-microelectronics.com
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHVerified email at eld.rwth-aachen.de
Holger RückerIHP, Innovations for High Performance MicroelelectronicsVerified email at ihp-microelectronics.com
Anil ManeArgonne National LaboratoryVerified email at anl.gov
Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
Sam VaziriStanford UniversityVerified email at stanford.edu
Mindaugas LukosiusIHPVerified email at ihp-microelectronics.com
Yuji YamamotoIHPVerified email at ihp-microelectronics.com
Anderson David SmithAssociate Professor, Chalmers University of TechnologyVerified email at kth.se
Jens BaringhausLeibniz Universität Hannover, Institut für FestkörperphysikVerified email at fkp.uni-hannover.de
Jose AvilaSynchrotron SOLEILVerified email at synchrotron-soleil.fr
J. Christoph ScheyttPaderborn UniversityVerified email at hni.uni-paderborn.de
Marco LiskerIHPVerified email at ihp-microelectronics.com
Maria C. AsensioProfessor, at Materials Science Institute of Madrid (ICMM) of the CSICVerified email at csic.es
Melkamu BeleteResearch Scientist at RWTH Aachen University, Faculty of Electrical Engineering and InfoVerified email at eld.rwth-aachen.de
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringVerified email at ucla.edu
Malgorzata Kot (Sowinska)BTU Cottbus-SenftenbergVerified email at b-tu.de
Ivy Razado-ColamboUniversity of the Philippines at Los BanosVerified email at up.edu.ph

Gunther Lippert

limited access caused by retirement, Frankfurt (Oder) Germany

Verified email at ihp-microelectronics.com

graphene MBE HBT SiGe:C hBN


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A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano letters 13 (4), 1435-1439, 2013	280	2013
Vertical Graphene Base Transistor W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ... Electron Device Letters, IEEE 33 (5), 691-693, 2012	188	2012
Suppressed diffusion of boron and carbon in carbon-rich silicon H Rücker, B Heinemann, W Röpke, R Kurps, D Krüger, G Lippert, ... Applied Physics Letters 73 (12), 1682-1684, 1998	182	1998
Surfactant-controlled solid phase epitaxy of germanium on silicon HJ Osten, J Klatt, G Lippert, B Dietrich, E Bugiel Physical review letters 69 (3), 450, 1992	116	1992
Measurement of stress and relaxation in Si_1−xGe_x layers by Raman line shift and x‐ray diffraction B Dietrich, E Bugiel, J Klatt, G Lippert, T Morgenstern, HJ Osten, ... Journal of applied physics 74 (5), 3177-3180, 1993	89	1993
Titanium-added praseodymium silicate high-k layers on Si (001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ... Applied Physics Letters 87 (2), 2005	87	2005
Direct graphene growth on insulator G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina physica status solidi (b) 248 (11), 2619-2622, 2011	84	2011
On the single-chip implementation of a Hiperlan/2 and IEEE 802.11 a capable modem E Grass, K Tittelbach-Helmrich, U Jagdhold, A Troya, G Lippert, O Kruger, ... IEEE Personal Communications 8 (6), 48-57, 2001	84	2001
Graphene grown on Ge (0 0 1) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ... Carbon 75, 104-112, 2014	80	2014
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016	75	2016
Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te HJ Osten, J Klatt, G Lippert, E Bugiel, S Higuchi Journal of applied physics 74 (4), 2507-2511, 1993	75	1993
Observation of the formation of a carbon-rich surface layer in silicon HJ Osten, M Methfessel, G Lippert, H Rücker Physical Review B 52 (16), 12179, 1995	71	1995
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics C Wenger, J Dąbrowski, P Zaumseil, R Sorge, P Formanek, G Lippert, ... Materials science in semiconductor processing 7 (4-6), 227-230, 2004	61	2004
The influence of surfactants on growth modes in molecular‐beam epitaxy: the growth of germanium layers on Si (100) HJ Osten, G Lippert, J Klatt Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992	61	1992
Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications G Lupina, G Kozłowski, J Dabrowski, C Wenger, P Dudek, P Zaumseil, ... Applied Physics Letters 92 (6), 2008	58	2008
Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si (111) T Schroeder, TL Lee, L Libralesso, I Joumard, J Zegenhagen, P Zaumseil, ... Journal of applied physics 97 (7), 2005	56	2005
The impact of supersaturated carbon on transient enhanced diffusion H Rücker, B Heinemann, D Bolze, R Kurps, D Krüger, G Lippert, HJ Osten Applied physics letters 74 (22), 3377-3379, 1999	56	1999
Two‐dimensional lattice‐mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant HJ Osten, J Klatt, G Lippert, E Bugiel, S Hinrich Applied physics letters 60 (20), 2522-2524, 1992	56	1992
Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices HJ Osten, B Heinemann, D Knoll, G Lippert, H Rücker Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998	52	1998
Understanding the growth mechanism of graphene on Ge/Si (001) surfaces J Dabrowski, G Lippert, J Avila, J Baringhaus, I Colambo, YS Dedkov, ... Scientific reports 6 (1), 31639, 2016	51	2016

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