Nils Weimann
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
Scattering of electrons at threading dislocations in GaN
NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of Applied Physics 83 (7), 3656-3659, 1998
The role of dislocation scattering in n-type GaN films
HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
Undoped AlGaN/GaN HEMTs for microwave power amplification
LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
GaN nanotip pyramids formed by anisotropic etching
HM Ng, NG Weimann, A Chowdhury
Journal of applied physics 94 (1), 650-653, 2003
Second-harmonic generation in periodically poled GaN
A Chowdhury, HM Ng, M Bhardwaj, NG Weimann
Applied physics letters 83 (6), 1077-1079, 2003
Monlithically coupled waveguide and phototransistor
YK Chen, VE Houtsma, AB Leven, NG Weimann
US Patent 7,471,855, 2008
Role of spontaneous and piezoelectric polarization induced effects in Group‐III nitride based heterostructures and devices
O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ...
physica status solidi (b) 216 (1), 381-389, 1999
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
JA Smart, AT Schremer, NG Weimann, O Ambacher, LF Eastman, ...
Applied physics letters 75 (3), 388-390, 1999
SiGe differential transimpedance amplifier with 50-GHz bandwidth
JS Weiner, A Leven, V Houtsma, Y Baeyens, YK Chen, P Paschke, ...
IEEE Journal of Solid-State Circuits 38 (9), 1512-1517, 2003
High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, S Syed, ...
Journal of applied physics 92 (1), 338-345, 2002
Patterning GaN microstructures by polarity-selective chemical etching
HM Ng, W Parz, NG Weimann, A Chowdhury
Japanese Journal of Applied Physics 42 (12A), L1405, 2003
Compact InP-based HBT VCOs with a wide tuning range at W-and D-band
Y Baeyens, C Dorschky, N Weimann, Q Lee, R Kopf, G Georgiou, ...
IEEE Transactions on Microwave Theory and Techniques 48 (12), 2403-2408, 2000
Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
O Mitrofanov, M Manfra, N Weimann
Applied physics letters 82 (24), 4361-4363, 2003
An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth
JS Weiner, JS Lee, A Leven, Y Baeyens, V Houtsma, G Georgiou, Y Yang, ...
IEEE journal of solid-state circuits 39 (10), 1720-1723, 2004
High-reflectivity ultraviolet AlGaN∕ AlGaN distributed Bragg reflectors
O Mitrofanov, S Schmult, MJ Manfra, T Siegrist, NG Weimann, AM Sergent, ...
Applied physics letters 88 (17), 2006
Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates
MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, SNG Chu
Applied physics letters 81 (8), 1456-1458, 2002
Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates
NG Weimann, MJ Manfra, T Wachtler
IEEE Electron Device Letters 24 (2), 57-59, 2003
Monolithic InP dual-polarization and dual-quadrature coherent receiver
CR Doerr, L Zhang, PJ Winzer, N Weimann, V Houtsma, TC Hu, NJ Sauer, ...
IEEE Photonics Technology Letters 23 (11), 694-696, 2011
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