Saravanapriyan Sriraman

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Dimitrios MaroudasProfessor of Chemical Engineering, University of Massachusetts AmherstDirección de correo verificada de ecs.umass.edu
Eray AydilNew York University Tandon School of Engineering Chemical and Biomolecular Engineering DepartmentDirección de correo verificada de nyu.edu
Richard GottschoLam ResearchDirección de correo verificada de alum.mit.edu
Mark J. KushnerUniversity of MichiganDirección de correo verificada de umich.edu
Chad HuardUniversity of MichiganDirección de correo verificada de umich.edu
Sumit AgarwalColorado School of MinesDirección de correo verificada de mines.edu
Thorsten LillClarycon Nanotechnology ResearchDirección de correo verificada de claryconresearch.com
Yiting ZhangKLA-TencorDirección de correo verificada de kla-tencor.com
Ioannis KevrekidisJohns Hopkins UniversityDirección de correo verificada de jhu.edu
Gerhard HummerMax Planck Institute of BiophysicsDirección de correo verificada de biophys.mpg.de
Richard Van de Sandenscientific director Eindhoven Institute of Renewable Energy Systems (EIRES), group leader DutchDirección de correo verificada de differ.nl
Juline ShoebLam research corporationDirección de correo verificada de lamrc.com
W.M.M. (Erwin) KESSELSEindhoven University of TechnologyDirección de correo verificada de tue.nl
Shenli ZhangPostdoctoral researcher at Lawrence Livermore National LabDirección de correo verificada de llnl.gov
Roland FallerTexas Tech UniversityDirección de correo verificada de ttu.edu

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Saravanapriyan Sriraman

Lam Research Corporation

Dirección de correo verificada de lamrc.com

Plasma processing Multi-physics Modeling and Simulation Nanomaterials...


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Overview of atomic layer etching in the semiconductor industry KJ Kanarik, T Lill, EA Hudson, S Sriraman, S Tan, J Marks, V Vahedi, ... Journal of Vacuum Science & Technology A 33 (2), 2015	601	2015
Mechanism of hydrogen-induced crystallization of amorphous silicon S Sriraman, S Agarwal, ES Aydil, D Maroudas Nature 418 (6893), 62-65, 2002	480	2002
Coarse master equation from Bayesian analysis of replica molecular dynamics simulations S Sriraman, IG Kevrekidis, G Hummer The Journal of Physical Chemistry B 109 (14), 6479-6484, 2005	154	2005
Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation S Sriraman, TA Kamp, A Paterson US Patent 10,163,610, 2018	100	2018
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions CM Huard, Y Zhang, S Sriraman, A Paterson, KJ Kanarik, MJ Kushner Journal of Vacuum Science & Technology A 35 (3), 2017	84	2017
Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features CM Huard, Y Zhang, S Sriraman, A Paterson, MJ Kushner Journal of Vacuum Science & Technology A 35 (5), 2017	65	2017
Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator Y Zhang, C Huard, S Sriraman, J Belen, A Paterson, MJ Kushner Journal of Vacuum Science & Technology A 35 (2), 2017	65	2017
Coarse nonlinear dynamics and metastability of filling-emptying transitions: water in carbon nanotubes S Sriraman, IG Kevrekidis, G Hummer Physical review letters 95 (13), 130603, 2005	65	2005
Multi-step method for etching strain gate recesses S Sriraman, L Braly US Patent 7,303,999, 2007	63	2007
Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas CM Huard, S Sriraman, A Paterson, MJ Kushner Journal of Vacuum Science & Technology A 36 (6), 2018	56	2018
Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H2 plasmas S Sriraman, MS Valipa, ES Aydil, D Maroudas Journal of Applied Physics 100 (5), 2006	56	2006
Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation S Ramalingam, S Sriraman, ES Aydil, D Maroudas Applied Physics Letters 78 (18), 2685-2687, 2001	51	2001
Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching S Sriraman, A Paterson US Patent 9,053,908, 2015	50	2015
Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles Y Zhang, MJ Kushner, S Sriraman, A Marakhtanov, J Holland, A Paterson Journal of Vacuum Science & Technology A 33 (3), 2015	49	2015
Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds MS Valipa, S Sriraman, ES Aydil, D Maroudas Journal of applied physics 100 (5), 2006	39	2006
Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework S Sriraman, R Wise, H Singh, A Paterson, AD Bailey III, V Vahedi, ... US Patent 10,197,908, 2019	38	2019
Growth and characterization of hydrogenated amorphous silicon thin films from radical precursor: Atomic-scale analysis S Sriraman, ES Aydil, D Maroudas Journal of applied physics 95 (4), 1792-1805, 2004	37	2004
Layout pattern proximity correction through fast edge placement error prediction J Mailfert, S Sriraman, MD Tetiker US Patent 10,254,641, 2019	31	2019
Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber Z Tan, Y Zhang, Q Fu, Q Xu, Y Wu, S Sriraman, A Paterson US Patent 10,242,845, 2019	31	2019
Mechanism and activation energy barrier for H abstraction by H (D) from a-Si: H surfaces S Agarwal, S Sriraman, A Takano, MCM Van de Sanden, ES Aydil, ... Surface science 515 (1), L469-L474, 2002	30	2002

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