| Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ... IEEE Transactions on Electron Devices 63 (1), 419-425, 2015 | 133 | 2015 |
| Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN B Gunning, J Lowder, M Moseley, W Alan Doolittle Applied Physics Letters 101 (8), 2012 | 102 | 2012 |
| Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015 | 99 | 2015 |
| High voltage and high current density vertical GaN power diodes AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ... Electronics Letters 52 (13), 1170-1171, 2016 | 98 | 2016 |
| Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look Applied Physics Letters 93 (17), 2008 | 97 | 2008 |
| Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018 | 89 | 2018 |
| Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ... Applied Physics Letters 109 (12), 2016 | 81 | 2016 |
| Tunnel-injected sub-260 nm ultraviolet light emitting diodes Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ... Applied Physics Letters 110 (20), 2017 | 77 | 2017 |
| Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap M Moseley, J Lowder, D Billingsley, WA Doolittle Applied Physics Letters 97 (19), 2010 | 68 | 2010 |
| Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes M Moseley, A Allerman, M Crawford, JJ Wierer, M Smith, L Biedermann Journal of Applied Physics 116 (5), 2014 | 61 | 2014 |
| Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle Applied Physics Letters 103 (13), 2013 | 56 | 2013 |
| Transient atomic behavior and surface kinetics of GaN M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle Journal of Applied Physics 106 (1), 2009 | 55 | 2009 |
| Observation and control of the surface kinetics of InGaN for the elimination of phase separation M Moseley, B Gunning, J Greenlee, J Lowder, G Namkoong, ... Journal of Applied Physics 112 (1), 2012 | 53 | 2012 |
| Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ... Applied Physics Letters 111 (5), 2017 | 52 | 2017 |
| Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes JJ Wierer, AA Allerman, I Montaņo, MW Moseley Applied Physics Letters 105 (6), 2014 | 45 | 2014 |
| Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ... Applied Physics Letters 109 (19), 2016 | 44 | 2016 |
| Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes MW Moseley, AA Allerman, MH Crawford, JJ Wierer, ML Smith, ... Journal of Applied Physics 117 (9), 2015 | 44 | 2015 |
| Comparison of interfacial and bulk ionic motion in analog memristors JD Greenlee, WL Calley, MW Moseley, WA Doolittle IEEE Transactions on Electron Devices 60 (1), 427-432, 2012 | 41 | 2012 |
| Extremely high hole concentrations in c‐plane GaN E Trybus, WA Doolittle, M Moseley, W Henderson, D Billingsley, ... physica status solidi c 6 (S2 2), S788-S791, 2009 | 39 | 2009 |
| Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs Y Zhang, AA Allerman, S Krishnamoorthy, F Akyol, MW Moseley, ... Applied Physics Express 9 (5), 052102, 2016 | 38 | 2016 |
