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Ron Schrimpf
Ron Schrimpf
Professor of Electrical Engineering, Vanderbilt University
Verified email at vanderbilt.edu
Title
Cited by
Cited by
Year
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
4692006
Response of advanced bipolar processes to ionizing radiation
EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin
IEEE transactions on nuclear science 38 (6), 1342-1351, 1991
4071991
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3751994
Physical model for enhanced interface-trap formation at low dose rates
SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
2922002
Monte Carlo simulation of single event effects
RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
2762010
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE Transactions on Nuclear Science 40 (6), 1276-1285, 1993
2351993
Defect generation by hydrogen at the Si-SiO2 interface
SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
2312001
ELDRS in bipolar linear circuits: A review
RL Pease, RD Schrimpf, DM Fleetwood
2008 European Conference on Radiation and Its Effects on Components and …, 2008
2282008
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2
ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
2272002
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies
B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007
2252007
Single event transient pulse widths in digital microcircuits
MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ...
IEEE transactions on nuclear science 51 (6), 3285-3290, 2004
2202004
Impact of low-energy proton induced upsets on test methods and rate predictions
BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ...
IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009
2182009
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
2082002
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf
IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996
1971996
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1942005
Trends in the total-dose response of modern bipolar transistors
RN Nowlin, EW Enlow, RD Schrimpf, WE Combs
IEEE Transactions on Nuclear Science 39 (6), 2026-2035, 1992
1931992
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
1912003
Radiation effects and soft errors in integrated circuits and electronic devices
DM Fleetwood, RD Schrimpf
World Scientific, 2004
1832004
Reactions of hydrogen with Si-SiO2 interfaces
ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf
IEEE Transactions on Nuclear Science 47 (6), 2262-2268, 2000
1832000
The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2
CJ Nicklaw, ZY Lu, DM Fleetwood, RD Schrimpf, ST Pantelides
IEEE Transactions on Nuclear Science 49 (6), 2667-2673, 2002
1822002
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