Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zúñiga-Pérez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 140 | 2016 |
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ... Journal of Applied Physics 113 (17), 2013 | 80 | 2013 |
Power performance at 40 GHz of AlGaN/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si (111) substrate P Altuntas, F Lecourt, A Cutivet, N Defrance, E Okada, M Lesecq, ... IEEE Electron Device Letters 36 (4), 303-305, 2015 | 79 | 2015 |
Universal description of III-V/Si epitaxial growth processes I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ... Physical review materials 2 (6), 060401, 2018 | 69 | 2018 |
III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet J Selles, V Crepel, I Roland, M El Kurdi, X Checoury, P Boucaud, M Mexis, ... Applied Physics Letters 109 (23), 2016 | 47 | 2016 |
Blue microlasers integrated on a photonic platform on silicon F Tabataba-Vakili, L Doyennette, C Brimont, T Guillet, S Rennesson, ... ACS photonics 5 (9), 3643-3648, 2018 | 35 | 2018 |
Efficient second harmonic generation in low-loss planar GaN waveguides M Gromovyi, J Brault, A Courville, S Rennesson, F Semond, G Feuillet, ... Optics express 25 (19), 23035-23044, 2017 | 30 | 2017 |
Optimization of High Electron Mobility Heterostructures for High-Power/Frequency Performances S Rennesson, F Lecourt, N Defrance, M Chmielowska, S Chenot, ... IEEE transactions on electron devices 60 (10), 3105-3111, 2013 | 29 | 2013 |
Proposition of a model elucidating the AlN-on-Si (111) microstructure N Mante, S Rennesson, E Frayssinet, L Largeau, F Semond, JL Rouvière, ... Journal of Applied Physics 123 (21), 2018 | 26 | 2018 |
Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range S Maine, C Koechlin, S Rennesson, J Jaeck, S Salort, B Chassagne, ... Applied optics 51 (15), 3031-3035, 2012 | 24 | 2012 |
III-nitride on silicon electrically injected microrings for nanophotonic circuits F Tabataba-Vakili, S Rennesson, B Damilano, E Frayssinet, JY Duboz, ... Optics Express 27 (8), 11800-11808, 2019 | 21 | 2019 |
Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE S Rennesson, M Leroux, M Al Khalfioui, M Nemoz, S Chenot, J Massies, ... physica status solidi (a) 215 (9), 1700640, 2018 | 20 | 2018 |
Short-wave infrared (λ= 3 μm) intersubband polaritons in the GaN/AlN system T Laurent, JM Manceau, E Monroy, CB Lim, S Rennesson, F Semond, ... Applied Physics Letters 110 (13), 2017 | 18 | 2017 |
Strong Coupling of Exciton-Polaritons in a Bulk Planar Waveguide: Quantifying the Coupling Strength C Brimont, L Doyennette, G Kreyder, F Réveret, P Disseix, F Médard, ... Physical Review Applied 14 (5), 054060, 2020 | 16 | 2020 |
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon F Tabataba-Vakili, L Doyennette, C Brimont, T Guillet, S Rennesson, ... Scientific Reports 9 (1), 18095, 2019 | 16 | 2019 |
AlGaN/GaN HEMTs with an InGaN back‐barrier grown by ammonia‐assisted molecular beam epitaxy S Rennesson, B Damilano, P Vennegues, S Chenot, Y Cordier physica status solidi (a) 210 (3), 480-483, 2013 | 14 | 2013 |
Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities F Tabataba-Vakili, I Roland, TM Tran, X Checoury, M El Kurdi, S Sauvage, ... Applied Physics Letters 111 (13), 2017 | 11 | 2017 |
Ridge polariton laser: different from a semiconductor edge-emitting laser H Souissi, M Gromovyi, T Gueye, C Brimont, L Doyennette, ... Physical Review Applied 18 (4), 044029, 2022 | 9 | 2022 |
Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy M Nemoz, F Semond, S Rennesson, M Leroux, S Bouchoule, ... Superlattices and Microstructures 150, 106801, 2021 | 9 | 2021 |
Laser damage of free-standing nanometer membranes Y Morimoto, I Roland, S Rennesson, F Semond, P Boucaud, P Baum Journal of Applied Physics 122 (21), 2017 | 9 | 2017 |