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Tapas Dutta
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Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation
G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ...
IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016
2192016
Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part I: Model Description
G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ...
IEEE Transactions on Electron Devices 63 (12), 4981 - 4985, 2016
2192016
Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures
G Pahwa, T Dutta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 65 (3), 867-873, 2018
1362018
Compact model for ferroelectric negative capacitance transistor with MFIS structure
G Pahwa, T Dutta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 64 (3), 1366-1374, 2017
1162017
Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM
T Dutta, G Pahwa, AR Trivedi, S Sinha, A Agarwal, YS Chauhan
IEEE Electron Device Letters 38 (8), 1161-1164, 2017
942017
Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X IONusing compact modeling approach
G Pahwa, T Dutta, A Agarwal, YS Chauhan
ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 49-54, 2016
812016
Impact of process variations on negative capacitance FinFET devices and circuits
T Dutta, G Pahwa, A Agarwal, YS Chauhan
IEEE Electron Device Letters 39 (1), 147-150, 2017
552017
Impact of Channel Thickness Variation on Bandstructure and Source-to-Drain Tunneling in Ultra-Thin Body III-V MOSFETs
T Dutta, S Kumar, P Rastogi, A Agarwal, YS Chauhan
IEEE Journal of Electron Devices Society 4 (2), 66-71, 2016
412016
Quantum confinement effects in extremely thin body germanium n-MOSFETs
P Rastogi, T Dutta, S Kumar, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 62 (11), 3575-3580, 2015
352015
Nano‑electronic Simulation Software (NESS): a flexible nano‑device simulation platform
S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics 19, 1031–1046, 2020
342020
NESS: new flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
212018
Modeling of the impact of source/drain regions on short channel effects in MOSFETs
T Dutta, Q Rafhay, G Pananakakis, G Ghibaudo
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
192013
Accurate boundary condition for short-channel effect compact modeling in MOS devices
G Hiblot, T Dutta, Q Rafhay, J Lacord, M Akbal, F Boeuf, G Ghibaudo
IEEE Transactions on Electron Devices 62 (1), 28-35, 2014
172014
Simulation and modeling of novel electronic device architectures with NESS (nano-electronic simulation software): A modular nano TCAD simulation framework
C Medina-Bailon, T Dutta, A Rezaei, D Nagy, F Adamu-Lema, ...
Micromachines 12 (6), 680, 2021
132021
Random discrete dopant induced variability in negative capacitance transistors
T Dutta, V Georgiev, A Asenov
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
122018
Origins of the short channel effects increase in III-V nMOSFET technologies
T Dutta, Q Rafhay, R Clerc, J Lacord, S Monfray, G Pananakakis, F Boeuf, ...
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
122012
Energy-Delay Tradeoffs in Negative Capacitance FinFET based CMOS Circuits
G Pahwa, T Dutta, A Agarwal, YS Chauhan
3rd International Conference on Emerging Electronics (ICEE), Mumbai, 2016
112016
Nano-electronic simulation software (NESS): A novel open-source TCAD simulation environment
C Medina-Bailon, T Dutta, F Adamu-Lema, A Rezaei, D Nagy, ...
Journal of Microelectronic Manufacturing 3 (4), 2020
102020
Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach
T Dutta, C Medina-Bailon, H Carrillo-Nuñez, O Badami, VP Georgiev, ...
14th IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm …, 2019
102019
Atomistic study of band structure and transport in extremely thin channel InP MOSFETs
T Dutta, P Kumar, P Rastogi, A Agarwal, YS Chauhan
physica status solidi (a) 213 (4), 898-904, 2016
102016
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