| Experimental demonstration of capacitorless A2RAM cells on silicon-on-insulator N Rodriguez, C Navarro, F Gamiz, F Andrieu, O Faynot, S Cristoloveanu IEEE Electron Device Letters 33 (12), 1717-1719, 2012 | 66 | 2012 |
| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 54 | 2018 |
| Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ... IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017 | 43 | 2017 |
| Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations C Navarro, S Barraud, S Martinie, J Lacord, MA Jaud, M Vinet Solid-State Electronics 128, 155-162, 2017 | 38 | 2017 |
| Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors C Navarro, M Bawedin, F Andrieu, B Sagnes, F Martinez, S Cristoloveanu Journal of Applied Physics 118 (18), 2015 | 38 | 2015 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 34 | 2017 |
| Experimental Demonstration of Operational Z2-FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ... IEEE Electron Device Letters 39 (5), 660-663, 2018 | 28 | 2018 |
| Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ... Nature Electronics 2 (9), 412-419, 2019 | 27 | 2019 |
| Reconfigurable field effect transistor for advanced CMOS: A comparison with FDSOI devices C Navarro, S Barraud, S Martinie, J Lacord, MA Jaud, M Vinet 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 24 | 2016 |
| Experimental developments of A2RAM memory cells on SOI and bulk substrates N Rodriguez, F Gamiz, C Navarro, C Marquez, F Andrieu, O Faynot, ... Solid-State Electronics 103, 7-14, 2015 | 21 | 2015 |
| Low-power Z2-FET capacitorless 1T-DRAM MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 18 | 2017 |
| Self-heating effects in ultrathin FD SOI transistors N Rodriguez, C Navarro, F Andrieu, O Faynot, F Gamiz, S Cristoloveanu IEEE 2011 International SOI Conference, 1-2, 2011 | 18 | 2011 |
| Multibranch mobility analysis for the characterization of FDSOI transistors C Navarro, N Rodriguez, A Ohata, F Gamiz, F Andrieu, ... IEEE electron device letters 33 (8), 1102-1104, 2012 | 17 | 2012 |
| Fully depleted SOI characterization by capacitance analysis of pin gated diodes C Navarro, M Bawedin, F Andrieu, J Cluzel, S Cristoloveanu IEEE Electron Device Letters 36 (1), 5-7, 2014 | 16 | 2014 |
| Thorough understanding of retention time of Z2FET memory operation M Duan, C Navarro, B Cheng, F Adamu-Lema, X Wang, VP Georgiev, ... IEEE Transactions on Electron Devices 66 (1), 383-388, 2018 | 15 | 2018 |
| 3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs C Navarro, S Navarro, C Marquez, JL Padilla, P Galy, F Gamiz IEEE Transactions on Electron Devices 66 (6), 2513-2519, 2019 | 14 | 2019 |
| Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors A Ohata, N Rodriguez, C Navarro, L Donetti, F Gamiz, ... Journal of Applied Physics 113 (14), 2013 | 14 | 2013 |
| Investigating the transient response of Schottky barrier back-gated MoS2 transistors C Marquez, N Salazar, F Gity, C Navarro, G Mirabelli, JC Galdon, R Duffy, ... 2D Materials 7 (2), 025040, 2020 | 13 | 2020 |
| MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications J Lacord, MS Parihar, C Navarro, FT Wakam, M Bawedin, S Cristoloveanu, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 13 | 2018 |
| Electrical characterization of FDSOI by capacitance measurements in gated pin diodes C Navarro, M Bawedin, F Andrieu, J Cluzel, S Cristoloveanu IEEE Transactions on Electron Devices 63 (3), 982-989, 2016 | 13 | 2016 |
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
