Michael Horn-von Hoegen
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Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit
K Sokolowski-Tinten, C Blome, J Blums, A Cavalleri, C Dietrich, ...
Nature 422, 287-289, 2003
Detection of nonthermal melting by ultrafast X-ray diffraction
CW Siders, A Cavalleri, K Sokolowski-Tinten, C Toth, T Guo, M Kammler, ...
Science 286 (5443), 1340-1342, 1999
Ultrafast bond softening in bismuth: Mapping a solid's interatomic potential with x-rays
DM Fritz, DA Reis, B Adams, RA Akre, J Arthur, C Blome, PH Bucksbaum, ...
Science 315 (5812), 633-636, 2007
Influence of surfactants in Ge and Si epitaxy on Si (001)
M Copel, MC Reuter, M Horn-von Hoegen, RM Tromp
Physical Review B 42 (18), 11682, 1990
Electronic acceleration of atomic motions and disordering in bismuth
G Sciaini, M Harb, SG Kruglik, T Payer, CT Hebeisen, FJM Heringdorf, ...
Nature 458 (7234), 56-59, 2009
Femtosecond X-ray measurement of ultrafast melting and large acoustic transients
K Sokolowski-Tinten, C Blome, C Dietrich, A Tarasevitch, ...
Physical Review Letters 87 (22), 225701-225701, 2001
Defect self-annihilation in surfactant-mediated epitaxial growth
M Horn-von Hoegen, FK LeGoues, M Copel, MC Reuter, RM Tromp
Physical Review Letters 67 (9), 1130-1133, 1991
Anharmonic lattice dynamics in germanium measured with ultrafast X-ray diffraction
A Cavalleri, CW Siders, FLH Brown, DM Leitner, C Toth, JA Squier, ...
Physical Review Letters 85 (3), 586-589, 2000
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction-Part I
M Horn-von Hoegen
Zeitschrift für Kristallographie 214 (10), 591-629, 1999
Interplay of wrinkles, strain, and lattice parameter in graphene on iridium
H Hattab, AT N’Diaye, D Wall, C Klein, G Jnawali, J Coraux, C Busse, ...
Nano letters 12 (2), 678-682, 2012
A new two‐dimensional particle detector for a toroidal electrostatic analyzer
RM Tromp, M Copel, MC Reuter, M Horn von Hoegen, J Speidell, ...
Review of scientific instruments 62 (11), 2679-2683, 1991
In situ observation of stress relaxation in epitaxial graphene
R Gastel, AJ Martínez-Galera, J Coraux, H Hattab, D Wall, FJ Heringdorf, ...
New Journal of Physics 11, 113056, 2009
Selecting a single orientation for millimeter sized graphene sheets
R van Gastel, AT N’Diaye, D Wall, J Coraux, C Busse, NM Buckanie, ...
Applied physics letters 95 (12), 2009
Optically excited structural transition in atomic wires on surfaces at the quantum limit
T Frigge, B Hafke, T Witte, B Krenzer, C Streubühr, A Samad Syed, ...
Nature 544 (7649), 207-211, 2017
Growth temperature dependent graphene alignment on Ir (111)
H Hattab, AT N’Diaye, D Wall, G Jnawali, J Coraux, C Busse, ...
Applied Physics Letters 98 (14), 2011
Layer-by-layer growth of germanium on Si (100): strain-induced morphology and the influence of surfactants
U Kohler, O Jusko, B Muller, M Horn-von Hoegen, M Pook
Ultramicroscopy 42, 832-837, 1992
Normal-incidence photoemission electron microscopy (NI-PEEM) for imaging surface plasmon polaritons
P Kahl, S Wall, C Witt, C Schneider, D Bayer, A Fischer, P Melchior, ...
Plasmonics 9, 1401-1407, 2014
Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold
A Cavalleri, CW Siders, C Rose-Petruck, R Jimenez, C Tóth, JA Squier, ...
Physical Review B 63 (19), 193306-193306, 2001
Short-range surface plasmonics: Localized electron emission dynamics from a 60-nm spot on an atomically flat single-crystalline gold surface
B Frank, P Kahl, D Podbiel, G Spektor, M Orenstein, L Fu, T Weiss, ...
Science Advances 3 (7), e1700721, 2017
Formation of interfacial dislocation network in surfactant mediated growth of Ge on Si (111) investigated by SPA-LEED.
M Horn-von Hoegen, A Al-Falou, H Pietsch, BH Müller, M Henzler
Surface science 298 (1), 29-42, 1993
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