| The Physics of Semiconductors MJ Caldas, J Dabrowski, A Fazzio, M Scheffler Singapore: World Scientific, 1990 | 892 | 1990 |
| Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL 2? J Dabrowski, M Scheffler Physical review letters 60 (21), 2183, 1988 | 336 | 1988 |
| Silicon surfaces and formation of interfaces: basic science in the industrial world J Dabrowski, HJ Mussig World Scientific, 2000 | 321 | 2000 |
| Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface J. Dabrowski, M. Scheffler Applied Surface Science 56, 15, 1992 | 284 | 1992 |
| A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano letters 13 (4), 1435-1439, 2013 | 280 | 2013 |
| Atomic structure of clean Si (113) surfaces: Theory and experiment J Dabrowski, HJ Müssig, G Wolff Physical review letters 73 (12), 1660, 1994 | 250 | 1994 |
| Isolated arsenic-antisite defect in GaAs and the properties of EL2 J. Dabrowski, M. Scheffler Physical Review B 40, 10391, 1989 | 210 | 1989 |
| Vertical Graphene Base Transistor W Mehr, J Dabrowski, G Lippert, YH Xie, MC Lemme, M Ostling, G Lupina Electron Device Letters 33, 691, 2012 | 188* | 2012 |
| Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ... Journal of Applied Physics 105 (11), 2009 | 140 | 2009 |
| Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) A Fissel, J Dabrowski, HJ Osten Journal of applied physics 91 (11), 8986-8991, 2002 | 131 | 2002 |
| Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors M Scheffler, J Dabrowski Philosophical Magazine A 58 (1), 107-121, 1988 | 126 | 1988 |
| Energy and width of hyperon in nuclear matter J Dabrowski, J Rożynek Physical Review C 23 (4), 1706, 1981 | 103 | 1981 |
| Titanium-added praseodymium silicate high-k layers on Si (001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ... Applied Physics Letters 87 (2), 2005 | 87 | 2005 |
| Direct graphene growth on insulator G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina physica status solidi (b) 248 (11), 2619-2622, 2011 | 83 | 2011 |
| Isospin dependence of the single-particle potential of the hyperon in nuclear matter J Dabrowski Physical Review C 60 (2), 025205, 1999 | 83 | 1999 |
| Graphene grown on Ge (001) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, F Herziger, J ... Carbon 75 (104-112), 2014 | 80 | 2014 |
| Mechanism of dopant segregation to interfaces J Dabrowski, HJ Müssig, V Zavodinsky, R Baierle, MJ Caldas Physical Review B 65 (24), 245305, 2002 | 80 | 2002 |
| Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016 | 74 | 2016 |
| Calculation of the surface stress anisotropy for the buckled Si(001)(1×2) and p(2×2) surfaces J Dabrowski, E Pehlke, M Scheffler Physical Review B 49 (7), 4790, 1994 | 72 | 1994 |
| Anion-antisite-like defects in III-V compounds MJ Caldas, J Dabrowski, A Fazzio, M Scheffler Physical review letters 65 (16), 2046, 1990 | 72 | 1990 |
