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Jaroslaw Dabrowski
Jaroslaw Dabrowski
Verified email at ihp-microelectronics.com
Title
Cited by
Cited by
Year
The Physics of Semiconductors
MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Singapore: World Scientific, 1990
8921990
Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL 2?
J Dabrowski, M Scheffler
Physical review letters 60 (21), 2183, 1988
3361988
Silicon surfaces and formation of interfaces: basic science in the industrial world
J Dabrowski, HJ Mussig
World Scientific, 2000
3212000
Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface
J. Dabrowski, M. Scheffler
Applied Surface Science 56, 15, 1992
2841992
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
2802013
Atomic structure of clean Si (113) surfaces: Theory and experiment
J Dabrowski, HJ Müssig, G Wolff
Physical review letters 73 (12), 1660, 1994
2501994
Isolated arsenic-antisite defect in GaAs and the properties of EL2
J. Dabrowski, M. Scheffler
Physical Review B 40, 10391, 1989
2101989
Vertical Graphene Base Transistor
W Mehr, J Dabrowski, G Lippert, YH Xie, MC Lemme, M Ostling, G Lupina
Electron Device Letters 33, 691, 2012
188*2012
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
1402009
Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
A Fissel, J Dabrowski, HJ Osten
Journal of applied physics 91 (11), 8986-8991, 2002
1312002
Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors
M Scheffler, J Dabrowski
Philosophical Magazine A 58 (1), 107-121, 1988
1261988
Energy and width of hyperon in nuclear matter
J Dabrowski, J Rożynek
Physical Review C 23 (4), 1706, 1981
1031981
Titanium-added praseodymium silicate high-k layers on Si (001)
T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 2005
872005
Direct graphene growth on insulator
G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina
physica status solidi (b) 248 (11), 2619-2622, 2011
832011
Isospin dependence of the single-particle potential of the hyperon in nuclear matter
J Dabrowski
Physical Review C 60 (2), 025205, 1999
831999
Graphene grown on Ge (001) from atomic source
G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, F Herziger, J ...
Carbon 75 (104-112), 2014
802014
Mechanism of dopant segregation to interfaces
J Dabrowski, HJ Müssig, V Zavodinsky, R Baierle, MJ Caldas
Physical Review B 65 (24), 245305, 2002
802002
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates
M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
742016
Calculation of the surface stress anisotropy for the buckled Si(001)(1×2) and p(2×2) surfaces
J Dabrowski, E Pehlke, M Scheffler
Physical Review B 49 (7), 4790, 1994
721994
Anion-antisite-like defects in III-V compounds
MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Physical review letters 65 (16), 2046, 1990
721990
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