Romain Maurand
Romain Maurand
Cea Grenoble
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A CMOS silicon spin qubit
R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
Ballistic interferences in suspended graphene
P Rickhaus, R Maurand, MH Liu, M Weiss, K Richter, C Schönenberger
Nature communications 4 (1), 2342, 2013
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ...
Nature communications 10 (1), 2776, 2019
Snake trajectories in ultraclean graphene p–n junctions
P Rickhaus, P Makk, MH Liu, E Tóvári, M Weiss, R Maurand, K Richter, ...
Nature communications 6 (1), 6470, 2015
Gate-based high fidelity spin readout in a CMOS device
M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...
Nature nanotechnology 14 (8), 737-741, 2019
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits
A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET
B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2016
Nonlocal spectroscopy of Andreev bound states
J Schindele, A Baumgartner, R Maurand, M Weiss, C Schönenberger
Physical Review B 89 (4), 045422, 2014
First-Order Quantum Phase Transition in the Kondo Regime of a Superconducting Carbon-Nanotube Quantum Dot
R Maurand, T Meng, E Bonet, S Florens, L Marty, W Wernsdorfer
Physical Review X 2 (1), 011009, 2012
Scalable tight-binding model for graphene
MH Liu, P Rickhaus, P Makk, E Tóvári, R Maurand, F Tkatschenko, ...
Physical review letters 114 (3), 036601, 2015
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
Guiding of electrons in a few-mode ballistic graphene channel
P Rickhaus, MH Liu, P Makk, R Maurand, S Hess, S Zihlmann, M Weiss, ...
Nano letters 15 (9), 5819-5825, 2015
19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8 GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot
L Le Guevel, G Billiot, X Jehl, S De Franceschi, M Zurita, Y Thonnart, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 306-308, 2020
Germanium quantum-well Josephson field-effect transistors and interferometers
F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ...
Nano letters 19 (2), 1023-1027, 2019
Large-scale fabrication of BN tunnel barriers for graphene spintronics
W Fu, P Makk, R Maurand, M Bräuninger, C Schönenberger
Journal of applied physics 116 (7), 2014
Charge detection in an array of CMOS quantum dots
E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...
Physical Review Applied 14 (2), 024066, 2020
SOI technology for quantum information processing
S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016
A single hole spin with enhanced coherence in natural silicon
N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ...
Applied Physics Letters 109 (19), 2016
Spin symmetry of the bilayer graphene ground state
F Freitag, M Weiss, R Maurand, J Trbovic, C Schönenberger
Physical Review B 87 (16), 161402, 2013
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