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Martin Rack
Martin Rack
Electrical Engineering Senior Researcher
Verified email at uclouvain.be
Title
Cited by
Cited by
Year
A SPDT RF switch small-and large-signal characteristics on TR-HR SOI substrates
BK Esfeh, M Rack, S Makovejev, F Allibert, JP Raskin
IEEE Journal of the Electron Devices Society 6, 543-550, 2018
292018
Low-loss Si-substrates enhanced using buried PN junctions for RF applications
M Rack, L Nyssens, JP Raskin
IEEE Electron Device Letters 40 (5), 690-693, 2019
282019
Small-and large-signal performance up to 175° C of low-cost porous silicon substrate for RF applications
M Rack, Y Belaroussi, KB Ali, G Scheen, BK Esfeh, JP Raskin
IEEE transactions on electron devices 65 (5), 1887-1895, 2018
232018
Post-process porous silicon for 5G applications
G Scheen, R Tuyaerts, M Rack, L Nyssens, J Rasson, M Nabet, JP Raskin
Solid-State Electronics 168, 107719, 2020
212020
SOI technologies for RF and millimeter-wave applications
M Rack, JP Raskin
Convergence of More Moore, More than Moore and Beyond Moore, 131-182, 2021
202021
Modeling of semiconductor substrates for RF applications: Part I—Static and dynamic physics of carriers and traps
M Rack, F Allibert, JP Raskin
IEEE Transactions on Electron Devices 68 (9), 4598-4605, 2021
172021
Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies
L Nyssens, M Rack, JP Raskin
International Journal of Microwave and Wireless Technologies 12 (7), 615-628, 2020
172020
Silicon-substrate enhancement technique enabling high quality integrated RF passives
M Rack, L Nyssens, JP Raskin
2019 IEEE MTT-S International Microwave Symposium (IMS), 1295-1298, 2019
162019
Silicon-substrate enhancement technique enabling high quality integrated RF passives
M Rack, L Nyssens, JP Raskin
2019 IEEE MTT-S International Microwave Symposium (IMS), 1295-1298, 2019
162019
Engineering SOI substrates for RF to mm-wave front-ends
F Allibert, L Andia, Y Morandini, C Veytizou, M Rack, L Nyssens, ...
Microwave Journal, 72, 2020
142020
Modeling of semiconductor substrates for RF applications: Part II—Parameter Impact on harmonic distortion
M Rack, F Allibert, JP Raskin
IEEE Transactions on Electron Devices 68 (9), 4606-4613, 2021
122021
High quality silicon-based substrates for microwave and millimeter wave passive circuits
Y Belaroussi, M Rack, AA Saadi, G Scheen, MT Belaroussi, M Trabelsi, ...
Solid-State Electronics 135, 78-84, 2017
122017
DC-40 GHz SPDTs in 22 nm FD-SOI and back-gate impact study
M Rack, L Nyssens, S Wane, D Bajon, JP Raskin
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 67-70, 2020
112020
On the separate extraction of self-heating and substrate effects in FD-SOI MOSFET
L Nyssens, M Rack, A Halder, JP Raskin, V Kilchytska
IEEE Electron Device Letters 42 (5), 665-668, 2021
102021
Ultra low-loss Si substrate for on-chip UWB GHz antennas
N André, M Rack, L Nyssens, C Gimeno, D Oueslati, KB Ali, S Gilet, ...
IEEE Journal of the Electron Devices Society 7, 393-397, 2019
92019
RF harmonic distortion modeling in silicon-based substrates including non-equilibrium carrier dynamics
M Rack, JP Raskin
2017 IEEE MTT-S International Microwave Symposium (IMS), 91-94, 2017
82017
Noise coupling between TSVs and active devices: Planar nMOSFETs vs. nFinFETs
X Sun, ARN Abadi, W Guo, KB Ali, M Rack, CR Neve, M Choi, V Moroz, ...
2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 260-265, 2015
82015
Behavior of gold-doped silicon substrate under small-and large-RF signal
M Nabet, M Rack, NZI Hashim, CHK de Groot, JP Raskin
Solid-State Electronics 168, 107718, 2020
72020
RF small-and large-signal characteristics of CPW and TFMS lines on trap-rich HR-SOI substrates
BK Esfeh, M Rack, KB Ali, F Allibert, JP Raskin
IEEE Transactions on Electron Devices 65 (8), 3120-3126, 2018
72018
Fast and accurate modelling of large TSV arrays in 3D-ICs using a 3D circuit model validated against full-wave FEM simulations and RF measurements
M Rack, JP Raskin, X Sun, G Van der Plas, P Absil, E Beyne
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 966-971, 2016
72016
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