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Oves Badami
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Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics 19, 1031-1046, 2020
292020
Electro-thermal performance boosting in stacked Si gate-all-around nanosheet FET with engineered source/drain contacts
S Venkateswarlu, O Badami, K Nayak
IEEE Transactions on Electron Devices 68 (9), 4723-4728, 2021
232021
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors
T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
232019
An improved surface roughness scattering model for bulk, thin-body, and quantum-well MOSFETs
O Badami, E Caruso, D Lizzit, P Osgnach, D Esseni, P Palestri, L Selmi
IEEE Transactions on Electron Devices 63 (6), 2306-2312, 2016
232016
Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors
O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ...
Applied Sciences 9 (9), 1895, 2019
192019
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
O Badami, F Driussi, P Palestri, L Selmi, D Esseni
2017 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2017
182017
Mobility of circular and elliptical Si nanowire transistors using a multi-subband 1D formalism
C Medina-Bailon, T Sadi, M Nedjalkov, H Carrillo-Nunez, J Lee, ...
IEEE Electron Device Letters 40 (10), 1571-1574, 2019
162019
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme
D Lizzit, O Badami, R Specogna, D Esseni
Journal of Applied Physics 121 (24), 2017
112017
Benchmarking of 3-D MOSFET architectures: Focus on the impact of surface roughness and self-heating
O Badami, D Lizzit, F Driussi, P Palestri, D Esseni
IEEE Transactions on Electron Devices 65 (9), 3646-3653, 2018
102018
Design optimization of gate-allaround vertical nanowire transistors for future memory applications
TK Agarwal, O Badami, S Ganguly, S Mahapatra, D Saha
IEEE International Conference of Electron Devices and Solid-State Circuitsá…, 2013
102013
Schr÷dinger equation based quantum corrections in drift-diffusion: A multiscale approach
T Dutta, C Medina-Bailon, H Carrillo-Nunez, O Badami, V Georgiev, ...
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2019
92019
Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs
J Lee, O Badami, H Carrillo-Nu˝ez, S Berrada, C Medina-Bailon, T Dutta, ...
Micromachines 9 (12), 643, 2018
82018
Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor
S Gundapaneni, A Goswami, O Badami, R Cuduvally, A Konar, M Bajaj, ...
Applied Physics Express 7 (12), 124302, 2014
72014
A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory
O Badami, T Sadi, F Adamu-Lema, P Lapham, D Mu, V Georgiev, J Ding, ...
IEEE Transactions on Nanotechnology 19, 704-710, 2020
62020
Surface Roughness Scattering in NEGF using self-energy formulation
O Badami, S Berrada, H Carrillo-Nunez, C Medina-Bailon, V Georgiev, ...
2019 International Conference on Simulation of Semiconductor Processes andá…, 2019
62019
Enhanced capabilities of the nano-electronic simulation software (ness)
C Medina-Bailon, O Badami, H Carrillo-Nunez, T Dutta, D Nagy, ...
2020 International Conference on Simulation of Semiconductor Processes andá…, 2020
52020
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations
MG Pala, O Badami, D Esseni
2017 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2017
52017
Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications
VP Georgiev, A Sengupta, P Maciazek, O Badami, C Medina-Bailon, ...
2020 International Conference on Simulation of Semiconductor Processes andá…, 2020
42020
Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices
MG Pala, O Badami, D Esseni
2018 IEEE International Electron Devices Meeting (IEDM), 33.1. 1-33.1. 4, 2018
42018
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section
O Badami, D Lizzit, R Specogna, D Esseni
2016 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2016
42016
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