| Top-gated graphene field-effect-transistors formed by decomposition of SiC YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ... Applied Physics Letters 92, 092102, 2008 | 306 | 2008 |
| Atomic-layer-deposited nanostructures for graphene-based nanoelectronics Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye Applied Physics Letters 92, 013101, 2008 | 299 | 2008 |
| Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ... Applied Physics Letters 101 (2), 2012 | 224 | 2012 |
| Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped : <?format ?>Evidence for Layered Transport of Bulk Carriers H Cao, J Tian, I Miotkowski, T Shen, J Hu, S Qiao, YP Chen Physical review letters 108 (21), 216803, 2012 | 221 | 2012 |
| Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric Y Xuan, YQ Wu, HC Lin, T Shen, PD Ye Electron Device Letters, IEEE 28 (11), 935-938, 2007 | 221 | 2007 |
| Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye Applied Physics Letters 95, 172105, 2009 | 179 | 2009 |
| Ultraviolet/ozone treatment to reduce metal-graphene contact resistance W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ... Applied Physics Letters 102 (18), 2013 | 174 | 2013 |
| High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics Y Xuan, YQ Wu, T Shen, T Yang, PD Ye Electron Devices Meeting, 2007. IEDM 2007. IEEE International, 637-640, 2007 | 164 | 2007 |
| Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited AlO∕ GaN metal-oxide-semiconductor structures YQ Wu, T Shen, PD Ye, GD Wilk Applied physics letters 90, 143504, 2007 | 131 | 2007 |
| Magnetoconductance oscillations in graphene antidot arrays T Shen, YQ Wu, MA Capano, LP Rokhinson, LW Engel, PD Ye Applied Physics Letters 93 (12), 2008 | 127 | 2008 |
| First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching YQ Wu, RS Wang, T Shen, JJ Gu, PD Ye Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 108 | 2009 |
| Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited AlO dielectrics YQ Wu, Y Xuan, T Shen, PD Ye, Z Cheng, A Lochtefeld Applied physics letters 91, 022108, 2007 | 106 | 2007 |
| Topological insulator based spin valve devices: Evidence for spin polarized transport of spin-momentum-locked topological surface states J Tian, I Childres, H Cao, T Shen, I Miotkowski, YP Chen Solid State Communications 191, 1-5, 2014 | 88 | 2014 |
| High-performance surface channel In-rich In0. 75Ga0. 25As MOSFETs with ALD high-k as gate dielectric Y Xuan, T Shen, M Xu, YQ Wu, PD Ye Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 84 | 2008 |
| Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO∕ AlO nanolaminate gate dielectric T Yang, Y Xuan, D Zemlyanov, T Shen, YQ Wu, JM Woodall, PD Ye, ... Applied Physics Letters 91, 142122, 2007 | 77 | 2007 |
| Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric HC Lin, T Yang, H Sharifi, SK Kim, Y Xuan, T Shen, S Mohammadi, PD Ye Applied Physics Letters 91 (21), 212101-212101-3, 2007 | 74 | 2007 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 71 | 2019 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 66 | 2017 |
| Metal-oxide-semiconductor field-effect transistors on GaAs (111) A surface with atomic-layer-deposited AlO as gate dielectrics M Xu, YQ Wu, O Koybasi, T Shen, PD Ye Applied Physics Letters 94, 212104, 2009 | 63 | 2009 |
| Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors Y Xuan, PD Ye, T Shen Applied Physics Letters 91 (23), 2007 | 62 | 2007 |
