Jingwang Wan
Cited by
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Longitudinal changes in cortical thickness associated with normal aging
M Thambisetty, J Wan, A Carass, Y An, JL Prince, SM Resnick
Neuroimage 52 (4), 1215-1223, 2010
Co single-atom anchored on Co3O4 and nitrogen-doped active carbon toward bifunctional catalyst for zinc-air batteries
X Zhong, W Yi, Y Qu, L Zhang, H Bai, Y Zhu, J Wan, S Chen, M Yang, ...
Applied Catalysis B: Environmental 260, 118188, 2020
Physical properties, antifungal and mycotoxin inhibitory activities of five essential oil nanoemulsions: Impact of oil compositions and processing parameters
J Wan, S Zhong, P Schwarz, B Chen, J Rao
Food chemistry 291, 199-206, 2019
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
IEEE Electron Device Letters 33 (2), 179-181, 2011
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan, A Zaslavsky
IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 65, 226-233, 2011
A tunneling field effect transistor model combining interband tunneling with channel transport
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Journal of Applied Physics 110 (10), 2011
Micropollutants in wastewater: fate and removal processes
S Das, NM Ray, J Wan, A Khan, T Chakraborty, MB Ray
Physico-chemical wastewater treatment and resource recovery 3, 75-117, 2017
The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method
SY Liu, T Chen, J Wan, GP Ru, BZ Li, XP Qu
Applied Physics A 94, 775-780, 2009
A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 90, 2-11, 2013
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky
Solid-State Electronics 76, 109-111, 2012
A New Platinum‐Like Efficient Electrocatalyst for Hydrogen Evolution Reaction at All pH: Single‐Crystal Metallic Interweaved V8C7 Networks
H Xu, J Wan, H Zhang, L Fang, L Liu, Z Huang, J Li, X Gu, Y Wang
Advanced Energy Materials 8 (23), 1800575, 2018
Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 84, 147-154, 2013
A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect
F Liao, J Deng, X Chen, Y Wang, X Zhang, J Liu, H Zhu, L Chen, Q Sun, ...
Small 16 (1), 1904369, 2020
Isolation and characterization of a rhizobacterial antagonist of root-knot nematodes
L Wei, Y Shao, J Wan, H Feng, H Zhu, H Huang, Y Zhou
PloS one 9 (1), e85988, 2014
An Iris Image Quality Assessment Method Based on Laplacian of Gaussian Operation.
J Wan, X He, P Shi
MVA, 248-251, 2007
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer
J Wan, SR Deng, R Yang, Z Shu, BR Lu, SQ Xie, Y Chen, E Huq, R Liu, ...
Microelectronic Engineering 86 (4-6), 1238-1242, 2009
Z2-FET: A promising FDSOI device for ESD protection
Y Solaro, J Wan, P Fonteneau, C Fenouillet-Beranger, C Le Royer, ...
Solid-State Electronics 97, 23-29, 2014
Low-frequency noise behavior of tunneling field effect transistors
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Applied Physics Letters 97 (24), 2010
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