| Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 245324, 2009 | 295 | 2009 |
| Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 83 (4), 045303, 2011 | 259 | 2011 |
| Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates E Uccelli, J Arbiol, C Magen, P Krogstrup, E Russo-Averchi, M Heiss, ... Nano letters 11 (9), 3827-3832, 2011 | 167 | 2011 |
| Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy B Ketterer, M Heiss, E Uccelli, J Arbiol, A Fontcuberta i Morral ACS nano 5 (9), 7585-7592, 2011 | 157 | 2011 |
| P-doping mechanisms in catalyst-free gallium arsenide nanowires J Dufouleur, C Colombo, T Garma, B Ketterer, E Uccelli, M Nicotra, ... Nano letters 10 (5), 1734-1740, 2010 | 144 | 2010 |
| InAs quantum dot arrays decorating the facets of GaAs nanowires E Uccelli, J Arbiol, JR Morante, A Fontcuberta i Morral ACS nano 4 (10), 5985-5993, 2010 | 125 | 2010 |
| Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating M Soini, I Zardo, E Uccelli, S Funk, G Koblmüller, A Fontcuberta i Morral, ... Applied Physics Letters 97 (26), 2010 | 123 | 2010 |
| Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks P Aseev, A Fursina, F Boekhout, F Krizek, JE Sestoft, F Borsoi, S Heedt, ... Nano letters 19 (1), 218-227, 2018 | 121 | 2018 |
| Field effect enhancement in buffered quantum nanowire networks F Krizek, JE Sestoft, P Aseev, S Marti-Sanchez, S Vaitiekėnas, L Casparis, ... Physical review materials 2 (9), 093401, 2018 | 108 | 2018 |
| Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon E Russo-Averchi, M Heiss, L Michelet, P Krogstrup, J Nygard, C Magen, ... Nanoscale 4 (5), 1486-1490, 2012 | 101 | 2012 |
| Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates L Czornomaz, E Uccelli, M Sousa, V Deshpande, V Djara, D Caimi, ... 2015 Symposium on VLSI Technology (VLSI Technology), T172-T173, 2015 | 100 | 2015 |
| Towards large size substrates for III-V co-integration made by direct wafer bonding on Si N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ... APL materials 2 (8), 2014 | 91 | 2014 |
| Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy B Ketterer, E Uccelli, AF i Morral Nanoscale 4 (5), 1789-1793, 2012 | 81 | 2012 |
| Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 87 (12), 125304, 2013 | 73 | 2013 |
| In (Ga) As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires M Heiss, B Ketterer, E Uccelli, JR Morante, J Arbiol, AF i Morral Nanotechnology 22 (19), 195601, 2011 | 59 | 2011 |
| Compensation mechanism in silicon-doped gallium arsenide nanowires B Ketterer, E Mikheev, E Uccelli, A Fontcuberta i Morral Applied physics letters 97 (22), 2010 | 58 | 2010 |
| Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si (0 0 1) KJ Kormondy, S Abel, F Fallegger, Y Popoff, P Ponath, AB Posadas, ... Microelectronic Engineering 147, 215-218, 2015 | 54 | 2015 |
| An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling L Czornomaz, N Daix, D Caimi, M Sousa, R Erni, MD Rossell, M El-Kazzi, ... 2012 International Electron Devices Meeting, 23.4. 1-23.4. 4, 2012 | 54 | 2012 |
| Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ... IEEE Journal of the Electron Devices Society 3 (3), 176-183, 2015 | 49 | 2015 |
| Pressure tuning of the optical properties of GaAs nanowires I Zardo, S Yazji, C Marini, E Uccelli, A Fontcuberta i Morral, G Abstreiter, ... ACS nano 6 (4), 3284-3291, 2012 | 49 | 2012 |
