|Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus|
G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ...
Nano letters 16 (12), 7768-7773, 2016
|Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides|
S Xu, Z Wu, H Lu, Y Han, G Long, X Chen, T Han, W Ye, Y Wu, J Lin, ...
2D Materials 3 (2), 021007, 2016
|Zero-field superconducting diode effect in small-twist-angle trilayer graphene|
JX Lin, P Siriviboon, HD Scammell, S Liu, D Rhodes, K Watanabe, ...
Nature Physics 18 (10), 1221-1227, 2022
|Isolation and Characterization of Few-Layer Manganese Thiophosphite|
G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ...
ACS nano 11 (11), 11330-11336, 2017
|Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides|
Z Wu, S Xu, H Lu, A Khamoshi, GB Liu, T Han, Y Wu, J Lin, G Long, Y He, ...
Nature communications 7, 12955, 2016
|Intrinsic valley Hall transport in atomically thin MoS2|
Z Wu, BT Zhou, X Cai, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ...
Nature communications 10 (1), 611, 2019
|Spin-orbit–driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene|
JX Lin, YH Zhang, E Morissette, Z Wang, S Liu, D Rhodes, K Watanabe, ...
Science 375 (6579), 437-441, 2022
|van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition|
S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ...
Nano letters 15 (4), 2645-2651, 2015
|Odd-Integer Quantum Hall States and Giant Spin Susceptibility in -Type Few-Layer |
S Xu, J Shen, G Long, Z Wu, Z Bao, CC Liu, X Xiao, T Han, J Lin, Y Wu, ...
Physical review letters 118 (6), 067702, 2017
|Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-Layer MoS2|
X Han, J Lin, J Liu, N Wang, D Pan
The Journal of Physical Chemistry C 123 (23), 14797-14802, 2019
|Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2|
J Lin, T Han, B Piot, Z Wu, S Xu, G Long, L An, P Cheung, PP Zheng, ...
Nano Letters, 2019
|Ambipolar quantum transport in few-layer black phosphorus|
G Long, D Maryenko, S Pezzini, S Xu, Z Wu, T Han, J Lin, C Cheng, Y Cai, ...
Physical Review B 96 (15), 155448, 2017
|Detection of interlayer interaction in few-layer graphene|
Z Wu, Y Han, J Lin, W Zhu, M He, S Xu, X Chen, H Lu, W Ye, T Han, Y Wu, ...
Physical Review B 92 (7), 075408, 2015
|Probing Defect‐Induced Midgap States in MoS2 Through Graphene–MoS2 Heterostructures|
Y Han, Z Wu, S Xu, X Chen, L Wang, Y Wang, W Xiong, T Han, W Ye, ...
Advanced Materials Interfaces 2 (8), 1500064, 2015
|A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment|
Z Wu, Y Guo, Y Guo, R Huang, S Xu, J Song, H Lu, Z Lin, Y Han, H Li, ...
Nanoscale 8 (5), 2594-2600, 2016
|Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport|
G Long, S Xu, J Shen, J Hou, Z Wu, T Han, J Lin, WK Wong, Y Cai, R Lortz, ...
2D Materials 3 (3), 031001, 2016
|Bridging the gap between atomically thin semiconductors and metal leads|
X Cai, Z Wu, X Han, Y Chen, S Xu, J Lin, T Han, P He, X Feng, L An, R Shi, ...
Nature Communications 13 (1), 1777, 2022
|Probing the electronic states and impurity effects in black phosphorus vertical heterostructures|
X Chen, L Wang, Y Wu, H Gao, Y Wu, G Qin, Z Wu, Y Han, S Xu, T Han, ...
2D Materials 3 (1), 015012, 2016
|Negative compressibility in graphene-terminated black phosphorus heterostructures|
Y Wu, X Chen, Z Wu, S Xu, T Han, J Lin, B Skinner, Y Cai, Y He, C Cheng, ...
Physical Review B 93 (3), 035455, 2016
|Investigation of the two-gap superconductivity in a few-layer -graphene heterojunction|
T Han, J Shen, NFQ Yuan, J Lin, Z Wu, Y Wu, S Xu, L An, G Long, Y Wang, ...
Physical Review B 97 (6), 060505, 2018