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Asaf Albo
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Cited by
Year
Stable Blue Emission from a Polyfluorene/Layered‐Compound Guest/Host Nanocomposite
E Aharon, A Albo, M Kalina, GL Frey
Advanced Functional Materials 16 (7), 980-986, 2006
942006
Electronic bound states in the continuum above (Ga, In)(As, N)/(Al, Ga) As quantum wells
A Albo, D Fekete, G Bahir
Physical Review B 85 (11), 115307, 2012
602012
Carrier leakage into the continuum in diagonal GaAs/Al0. 15GaAs terahertz quantum cascade lasers
A Albo, Q Hu
Applied Physics Letters 107 (24), 2015
552015
Room temperature negative differential resistance in terahertz quantum cascade laser structures
A Albo, Q Hu, JL Reno
Applied Physics Letters 109 (8), 2016
532016
Investigating temperature degradation in THz quantum cascade lasers by examination of temperature dependence of output power
A Albo, Q Hu
Applied Physics Letters 106 (13), 2015
482015
Two-well terahertz quantum cascade lasers with suppressed carrier leakage
A Albo, YV Flores, Q Hu, JL Reno
Applied Physics Letters 111 (11), 2017
402017
Tradeoffs between oscillator strength and lifetime in terahertz quantum cascade lasers
CWI Chan, A Albo, Q Hu, JL Reno
Applied Physics Letters 109 (20), 2016
392016
Split-well direct-phonon terahertz quantum cascade lasers
A Albo, YV Flores, Q Hu, JL Reno
Applied Physics Letters 114 (19), 191102, 2019
352019
Impact of interface roughness scattering on the performance of GaAs/AlxGa1-xAs terahertz quantum cascade lasers
YV Flores, A Albo
332017
3 mega-pixel InSb detector with 10Ám pitch
G Gershon, A Albo, M Eylon, O Cohen, Z Calahorra, M Brumer, M Nitzani, ...
Infrared Technology and Applications XXXIX 8704, 929-938, 2013
302013
Temperature-driven enhancement of the stimulated emission rate in terahertz quantum cascade lasers
A Albo, YV Flores
IEEE Journal of Quantum Electronics 53 (1), 1-5, 2016
282016
Carrier leakage dynamics in terahertz quantum cascade lasers
A Albo, YV Flores
IEEE Journal of Quantum Electronics 53 (5), 1-8, 2017
202017
Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers
A Albo, G Bahir, D Fekete
Journal of Applied Physics 108 (9), 2010
192010
Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications
A Albo, C Cytermann, G Bahir, D Fekete
Applied Physics Letters 96 (14), 2010
192010
Method and system for detecting light having a light absorbing layer with bandgap modifying atoms
G Bahir, D Fekete, A Asaf
US Patent 8,492,702, 2013
182013
LARGE FORMAT InSb INFRARED DETECTOR WITH 10 Ám PIXELS
G Gershon, A Albo, M Eylon, O Cohen, Z Calahorra, M Brumer, M Nitzani, ...
Proc. Optro Conference 2931891, 2014
152014
Light emitting system and method of fabricating and using the same
G Bahir, D Fekete, A Asaf
US Patent 8,367,450, 2013
122013
The significance of carrier leakage for stable lasing in split-well direct phonon terahertz quantum cascade lasers
N Lander Gower, S Piperno, A Albo
Photonics 7 (3), 59, 2020
112020
The effect of doping in split-well direct-phonon THz quantum-cascade laser structures
N Lander Gower, S Piperno, A Albo
Photonics 8 (6), 195, 2021
102021
Self-consistent gain calculations and carrier transport analysis for split-well direct-phonon terahertz quantum cascade lasers
N Lander Gower, S Piperno, A Albo
AIP Advances 10 (11), 2020
102020
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