| Stable Blue Emission from a Polyfluorene/Layered‐Compound Guest/Host Nanocomposite E Aharon, A Albo, M Kalina, GL Frey Advanced Functional Materials 16 (7), 980-986, 2006 | 96 | 2006 |
| Electronic bound states in the continuum above (Ga, In)(As, N)/(Al, Ga) As quantum wells A Albo, D Fekete, G Bahir Physical Review B—Condensed Matter and Materials Physics 85 (11), 115307, 2012 | 63 | 2012 |
| Room temperature negative differential resistance in terahertz quantum cascade laser structures A Albo, Q Hu, JL Reno Applied Physics Letters 109 (8), 2016 | 60 | 2016 |
| Carrier leakage into the continuum in diagonal GaAs/Al0. 15GaAs terahertz quantum cascade lasers A Albo, Q Hu Applied Physics Letters 107 (24), 2015 | 60 | 2015 |
| Investigating temperature degradation in THz quantum cascade lasers by examination of temperature dependence of output power A Albo, Q Hu Applied Physics Letters 106 (13), 2015 | 54 | 2015 |
| Two-well terahertz quantum cascade lasers with suppressed carrier leakage A Albo, YV Flores, Q Hu, JL Reno Applied Physics Letters 111 (11), 2017 | 47 | 2017 |
| Tradeoffs between oscillator strength and lifetime in terahertz quantum cascade lasers CWI Chan, A Albo, Q Hu, JL Reno Applied Physics Letters 109 (20), 2016 | 42 | 2016 |
| Split-well direct-phonon terahertz quantum cascade lasers A Albo, YV Flores, Q Hu, JL Reno Applied Physics Letters 114 (19), 191102, 2019 | 41 | 2019 |
| Impact of interface roughness scattering on the performance of GaAs/AlxGa1-xAs terahertz quantum cascade lasers YV Flores, A Albo | 40 | 2017 |
| Temperature-driven enhancement of the stimulated emission rate in terahertz quantum cascade lasers A Albo, YV Flores IEEE Journal of Quantum Electronics 53 (1), 1-5, 2016 | 33 | 2016 |
| 3 mega-pixel InSb detector with 10µm pitch G Gershon, A Albo, M Eylon, O Cohen, Z Calahorra, M Brumer, M Nitzani, ... Infrared Technology and Applications XXXIX 8704, 929-938, 2013 | 30 | 2013 |
| Carrier leakage dynamics in terahertz quantum cascade lasers A Albo, YV Flores IEEE Journal of Quantum Electronics 53 (5), 1-8, 2017 | 26 | 2017 |
| Method and system for detecting light having a light absorbing layer with bandgap modifying atoms G Bahir, D Fekete, A Asaf US Patent 8,492,702, 2013 | 19 | 2013 |
| Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers A Albo, G Bahir, D Fekete Journal of Applied Physics 108 (9), 2010 | 19 | 2010 |
| Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications A Albo, C Cytermann, G Bahir, D Fekete Applied Physics Letters 96 (14), 2010 | 19 | 2010 |
| Self-consistent gain calculations and carrier transport analysis for split-well direct-phonon terahertz quantum cascade lasers N Lander Gower, S Piperno, A Albo AIP Advances 10 (11), 2020 | 16 | 2020 |
| The effect of doping in split-well direct-phonon THz quantum-cascade laser structures N Lander Gower, S Piperno, A Albo Photonics 8 (6), 195, 2021 | 15 | 2021 |
| The significance of carrier leakage for stable lasing in split-well direct phonon terahertz quantum cascade lasers N Lander Gower, S Piperno, A Albo Photonics 7 (3), 59, 2020 | 15 | 2020 |
| LARGE FORMAT InSb INFRARED DETECTOR WITH 10 µm PIXELS G Gershon, A Albo, M Eylon, O Cohen, Z Calahorra, M Brumer, M Nitzani, ... Proc. Optro Conference 2931891, 2014 | 15 | 2014 |
| Light emitting system and method of fabricating and using the same G Bahir, D Fekete, A Asaf US Patent 8,367,450, 2013 | 12 | 2013 |
John L RenoSandia National Laboratories, University of Illinois at Chicago, Center for IntegratedVerified email at sandia.gov
