Mohi Uddin Jewel
Mohi Uddin Jewel
TD-FEOL Integration Engineer, Samsung Austin Semiconductor
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Inkjet-printed molybdenum disulfide and nitrogen-doped graphene active layer high on/off ratio transistors
MU Jewel, MA Monne, B Mishra, MY Chen
Molecules 25 (5), 1081, 2020
Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications
MU Jewel, MDS Mahmud, MA Monne, A Zakhidov, MY Chen
RSC advances 9 (4), 1841-1848, 2019
Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1
M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ...
Applied Physics Express 13 (9), 094002, 2020
Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment
S Hasan, MU Jewel, SG Karakalos, M Gaevski, I Ahmad
Coatings 12 (7), 924, 2022
Photoconductive Thin Films Composed of Environmentally Benign AgBiS2 Nanocrystal Inks Obtained through a Rapid Phase Transfer Process
ML Kelley, F Ahmed, SL Abiodun, M Usman, MU Jewel, K Hussain, ...
ACS Applied Electronic Materials 3 (4), 1550-1555, 2021
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders
MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ...
Applied Physics Letters 119 (13), 2021
Graphene based 3D printed single patch antenna
MA Monne, MU Jewel, Z Wang, MY Chen
Low-Dimensional Materials and Devices 2018 10725, 21-26, 2018
Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence
AK Mohi Uddin Jewel, Md Didarul Alam, Shahab Mollah, Kamal Hussain, Virginia ...
Applied Physics Letters 115, 213502, 2019
A comprehensive study of defects in gallium oxide by density functional theory
MU Jewel, S Hasan, I Ahmad
Computational Materials Science 218, 111950, 2023
MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor
S Hasan, MU Jewel, SR Crittenden, D Lee, V Avrutin, Ü Özgür, H Morkoç, ...
Crystals 13 (2), 231, 2023
Flexible graphene field effect transistor with graphene oxide dielectric on polyimide substrate
MU Jewel, TA Siddiquee, MR Islam
2013 International Conference on Electrical Information and Communication …, 2014
Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template
MU Jewel, S Hasan, SR Crittenden, V Avrutin, Ü Özgür, H Morkoç, ...
physica status solidi (a) 220 (11), 2300036, 2023
Gas and Air Quality Detection, and Monitoring Using Embedded System for Nanofabrication Facility
MU Jewel, B DasGupta, D Valles
International Conference of Embedded Systems, Cyber-physical Systems …, 2018
All inkjet-printed high on/off ratio two-dimensional materials field effect transistor
MU Jewel, F Mokhtari-Koushyar, RT Chen, MY Chen
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-4, 2018
Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics
A Mamun, K Hussain, MU Jewel, S Mollah, K Huynh, ME Liao, T Bai, ...
Electrochemical Society Meeting Abstracts 239, 1075-1075, 2021
Publisher's Note:“Trap characterization in ultra-wide bandgap Al0. 65Ga0. 4N/Al0. 4Ga0. 6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence …
MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ...
Applied Physics Letters 115 (24), 2019
Reduction in density of interface traps determined by CV analysis in III-nitride-based MOSHFET structure
S Hasan, MU Jewel, SR Crittenden, MG Zakir, NJ Nipa, V Avrutin, ...
Applied Physics Letters 124 (11), 2024
Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD
MU Jewel, S Hasan, SR Crittenden, V Avrutin, Ü Özgür, H Morkoc, ...
Oxide-based Materials and Devices XIV 12422, 18-22, 2023
Gate leakage current and threshold voltage characteristics of β-Ga2O3 passivated AlGaN/GaN based heterojunction field effect transistor
S Hasan, MU Jewel, SR Crittenden, D Lee, VS Avrutin, Ü Özgür, ...
Gallium Nitride Materials and Devices XVIII 12421, 73-77, 2023
MOCVD-Grown Ga2O3 as a Gate Dielectric on Algan/Gan Based Heterojunction Field Effect Transistor
S Hasan, MU Jewel, SR Crittenden, D Lee, V Avrutin, U Ozgur, H Morkoç, ...
Preprints, 2023
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