Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1 M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ... Applied Physics Express 13 (9), 094002, 2020 | 23 | 2020 |
Inkjet-printed molybdenum disulfide and nitrogen-doped graphene active layer high on/off ratio transistors MU Jewel, MA Monne, B Mishra, MY Chen Molecules 25 (5), 1081, 2020 | 21 | 2020 |
Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications MU Jewel, MDS Mahmud, MA Monne, A Zakhidov, MY Chen RSC advances 9 (4), 1841-1848, 2019 | 18 | 2019 |
Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment S Hasan, MU Jewel, SG Karakalos, M Gaevski, I Ahmad Coatings 12 (7), 924, 2022 | 17 | 2022 |
Photoconductive Thin Films Composed of Environmentally Benign AgBiS2 Nanocrystal Inks Obtained through a Rapid Phase Transfer Process ML Kelley, F Ahmed, SL Abiodun, M Usman, MU Jewel, K Hussain, ... ACS Applied Electronic Materials 3 (4), 1550-1555, 2021 | 12 | 2021 |
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ... Applied Physics Letters 119 (13), 2021 | 9 | 2021 |
MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor S Hasan, MU Jewel, SR Crittenden, D Lee, V Avrutin, Ü Özgür, H Morkoç, ... Crystals 13 (2), 231, 2023 | 7 | 2023 |
Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence AK Mohi Uddin Jewel, Md Didarul Alam, Shahab Mollah, Kamal Hussain, Virginia ... Applied Physics Letters 115, 213502, 2019 | 7 | 2019 |
Graphene based 3D printed single patch antenna MA Monne, MU Jewel, Z Wang, MY Chen Low-Dimensional Materials and Devices 2018 10725, 21-26, 2018 | 7 | 2018 |
A comprehensive study of defects in gallium oxide by density functional theory MU Jewel, S Hasan, I Ahmad Computational Materials Science 218, 111950, 2023 | 6 | 2023 |
Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template MU Jewel, S Hasan, SR Crittenden, V Avrutin, Ü Özgür, H Morkoç, ... physica status solidi (a) 220 (11), 2300036, 2023 | 5 | 2023 |
Flexible graphene field effect transistor with graphene oxide dielectric on polyimide substrate MU Jewel, TA Siddiquee, MR Islam 2013 International Conference on Electrical Information and Communication …, 2014 | 5 | 2014 |
Gas and Air Quality Detection, and Monitoring Using Embedded System for Nanofabrication Facility MU Jewel, B DasGupta, D Valles International Conference of Embedded Systems, Cyber-physical Systems …, 2018 | 2 | 2018 |
All inkjet-printed high on/off ratio two-dimensional materials field effect transistor MU Jewel, F Mokhtari-Koushyar, RT Chen, MY Chen 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-4, 2018 | 2 | 2018 |
Reduction in density of interface traps determined by CV analysis in III-nitride-based MOSHFET structure S Hasan, MU Jewel, SR Crittenden, MG Zakir, NJ Nipa, V Avrutin, ... Applied Physics Letters 124 (11), 2024 | 1 | 2024 |
Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics A Mamun, K Hussain, MU Jewel, S Mollah, K Huynh, ME Liao, T Bai, ... Electrochemical Society Meeting Abstracts 239, 1075-1075, 2021 | 1 | 2021 |
Publisher's Note:“Trap characterization in ultra-wide bandgap Al0. 65Ga0. 4N/Al0. 4Ga0. 6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence … MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ... Applied Physics Letters 115 (24), 2019 | 1 | 2019 |
Surface properties of MOCVD grown (Al1− xGax) 2O3 thin films on c-plane sapphire via scanning Kelvin probe microscopy MU Jewel, SR Crittenden, T Hassan, S Hasan, D Lee, NJ Nipa, MG Zakir, ... AIP Advances 14 (12), 2024 | | 2024 |
In-situ deposition of oxide passivation layer on iii-nitride based hemt I Ahmad, S Hasan, MU Jewel US Patent App. 18/520,979, 2024 | | 2024 |
Phase stabilized growth of monoclinic-gallium oxide on thermally conducting materials I Ahmad, MU Jewel, S Hasan US Patent App. 18/506,315, 2024 | | 2024 |