| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... 2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010 | 163 | 2010 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 155 | 2011 |
| Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminum … JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ... ECS Journal of Solid State Science and Technology 6 (10), N189, 2017 | 110 | 2017 |
| Effects of barrier layers on device performance of high mobility In0. 7Ga0. 3As metal-oxide-semiconductor field-effect-transistors H Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee Applied Physics Letters 96 (10), 2010 | 79 | 2010 |
| High performance In0. 7Ga0. 3As metal-oxide-semiconductor transistors with mobility> 4400 cm2/V s using InP barrier layer H Zhao, YT Chen, JH Yum, Y Wang, N Goel, JC Lee Applied Physics Letters 94 (19), 2009 | 71 | 2009 |
| 300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique KW Ang, J Barnett, WY Loh, J Huang, BG Min, PY Hung, I Ok, JH Yum, ... 2011 International Electron Devices Meeting, 35.5. 1-35.5. 4, 2011 | 70 | 2011 |
| Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0. 53Ga0. 47As and InP using physical vapor deposition HfO2 and silicon … IJ Ok, H Kim, M Zhang, F Zhu, S Park, J Yum, H Zhao, D Garcia, P Majhi, ... Applied Physics Letters 92 (20), 2008 | 69 | 2008 |
| Effects of gate-first and gate-last process on interface quality of In0. 53Ga0. 47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides H Zhao, J Huang, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee Applied Physics Letters 95 (25), 2009 | 61 | 2009 |
| Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric H Zhao, D Shahrjerdi, F Zhu, M Zhang, HS Kim, I Ok, JH Yum, SI Park, ... Applied Physics Letters 92 (23), 2008 | 58* | 2008 |
| Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI I Ok, K Akarvardar, S Lin, M Baykan, CD Young, PY Hung, MP Rodgers, ... 2010 International Electron Devices Meeting, 34.2. 1-34.2. 4, 2010 | 57 | 2010 |
| Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices JH Yum, T Akyol, M Lei, T Hudnall, G Bersuker, M Downer, CW Bielawski, ... Journal of Applied Physics 109 (6), 2011 | 51 | 2011 |
| A study of metal-oxide-semiconductor capacitors on GaAs, In0. 53Ga0. 47As, InAs, and InSb substrates using a germanium interfacial passivation layer HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, P Majhi, ... Applied Physics Letters 93 (6), 2008 | 45 | 2008 |
| Improved electrical characteristics of TaN/Al2O3/In0. 53Ga0. 47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation YT Chen, H Zhao, JH Yum, Y Wang, F Xue, F Zhou, JC Lee Applied Physics Letters 95 (1), 2009 | 44 | 2009 |
| Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, J Oh, ... Applied Physics Letters 92 (3), 2008 | 41 | 2008 |
| Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee Applied Physics Letters 91 (4), 2007 | 41 | 2007 |
| In0. 53Ga0. 47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics H Zhao, JH Yum, YT Chen, JC Lee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 38 | 2009 |
| Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕ HfO2 gate dielectric H Zhao, D Shahrjerdi, F Zhu, HS Kim, I Ok, M Zhang, JH Yum, ... Applied Physics Letters 92 (25), 2008 | 38 | 2008 |
| A study of highly crystalline novel beryllium oxide film using atomic layer deposition JH Yum, T Akyol, M Lei, DA Ferrer, TW Hudnall, M Downer, CW Bielawski, ... Journal of Crystal Growth 334 (1), 126-133, 2011 | 37 | 2011 |
| Evidence for hydrogen two-level systems in atomic layer deposition oxides MS Khalil, MJA Stoutimore, S Gladchenko, AM Holder, CB Musgrave, ... Applied Physics Letters 103 (16), 2013 | 36 | 2013 |
| Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å YT Chen, H Zhao, JH Yum, Y Wang, JC Lee Applied Physics Letters 94 (21), 2009 | 36 | 2009 |
Chen Yen-TingUT AustinDirección de correo verificada de mail.utexas.edu
