Baojuan Dong (董宝娟)
Baojuan Dong (董宝娟)
Institude of Metal Research, Chinese Academy of Sciences
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Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor
Z Wang, T Zhang, M Ding, B Dong, Y Li, M Chen, X Li, J Huang, H Wang, ...
Nature nanotechnology 13 (7), 554-559, 2018
Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe2
X Sun, W Li, X Wang, Q Sui, T Zhang, Z Wang, L Liu, D Li, S Feng, ...
Nano Research 13, 3358-3363, 2020
Control of surface and edge oxidation on phosphorene
KL Kuntz, RA Wells, J Hu, T Yang, B Dong, H Guo, AH Woomer, ...
ACS applied materials & interfaces 9 (10), 9126-9135, 2017
Gate tunable giant anisotropic resistance in ultra-thin GaTe
H Wang, ML Chen, M Zhu, Y Wang, B Dong, X Sun, X Zhang, S Cao, X Li, ...
Nature communications 10 (1), 2302, 2019
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
S Zhao, B Dong, H Wang, H Wang, Y Zhang, ZV Han, H Zhang
Nanoscale Advances 2 (1), 109-139, 2020
A FinFET with one atomic layer channel
ML Chen, X Sun, H Liu, H Wang, Q Zhu, S Wang, H Du, B Dong, J Zhang, ...
Nature communications 11 (1), 1205, 2020
New two-dimensional phase of tin chalcogenides: Candidates for high-performance thermoelectric materials
B Dong, Z Wang, NT Hung, AR Oganov, T Yang, R Saito, Z Zhang
Physical Review Materials 3 (1), 013405, 2019
Interpreting core-level spectra of oxidizing phosphorene: Theory and experiment
T Yang, B Dong, J Wang, Z Zhang, J Guan, K Kuntz, SC Warren, ...
Physical Review B 92 (12), 125412, 2015
Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges
S Zhao, X Li, B Dong, H Wang, H Wang, Y Zhang, Z Han, H Zhang
Reports on Progress in Physics 84 (2), 026401, 2021
Deep-ultraviolet Raman scattering spectroscopy of monolayer WS2
HL Liu, T Yang, Y Tatsumi, Y Zhang, B Dong, H Guo, Z Zhang, ...
Scientific reports 8 (1), 11398, 2018
Thermoelectric properties of α-In2Se3 monolayer
T Nian, Z Wang, B Dong
Applied Physics Letters 118 (3), 033103, 2021
Spontaneous antiferromagnetic order and strain effect on electronic properties of α-graphyne
B Dong, H Guo, Z Liu, T Yang, P Tao, S Tang, R Saito, Z Zhang
Carbon 131, 223-228, 2018
Fundamental band gap and alignment of two-dimensional semiconductors explored by machine learning
Z Zhu, B Dong, H Guo, T Yang, Z Zhang
Chinese Physics B 29 (4), 046101, 2020
Perspectives on exfoliated two-dimensional spintronics
X Li, B Dong, X Sun, H Wang, T Yang, G Yu, ZV Han
Journal of Semiconductors 40 (8), 081508, 2019
Stability and electronic properties of two-dimensional indium iodide
J Wang, B Dong, H Guo, T Yang, Z Zhu, G Hu, R Saito, Z Zhang
Physical Review B 95 (4), 045404, 2017
Large magnetocrystalline anisotropy of Fe3− xCrxSe4 single crystals due to Cr substitution
D Li, SJ Li, BJ Dong, T Yang, W Liu, ZD Zhang
Europhysics Letters 109 (3), 37004, 2015
Mid-infrared modulators integrating silicon and black phosphorus photonics
L Huang, B Dong, ZG Yu, J Zhou, Y Ma, YW Zhang, C Lee, KW Ang
Materials Today Advances 12, 100170, 2021
The emerging ferroic orderings in two dimensions
Y Zhang, H Wang, F Li, X Sun, B Dong, X Li, ZV Han, T Yang, H Zhang
Science China Information Sciences 62, 1-27, 2019
Single orthorhombic b axis orientation and antiferromagnetic ordering type in multiferroic CaMnO3 thin film with La0.67Ca0.33MnO3 buffer layer
F Wang, BJ Dong, YQ Zhang, W Liu, HR Zhang, Y Bai, SK Li, T Yang, ...
Applied Physics Letters 111 (12), 122902, 2017
Flattening is flattering: The revolutionizing 2D electronic systems
B Dong, T Yang, Z Han
Chinese Physics B 29 (9), 097307, 2020
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