Jaehyun Lee
Jaehyun Lee
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Analysis of drain-induced barrier rising in short-channel negative-capacitance FETs and its applications
J Seo, J Lee, M Shin
IEEE Transactions on Electron Devices 64 (4), 1793-1798, 2017
Density functional theory based simulations of silicon nanowire field effect transistors
M Shin, WJ Jeong, J Lee
Journal of applied physics 119 (15), 2016
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ...
Journal of Computational Electronics 19, 1031-1046, 2020
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors
T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications
J Liang, R Chen, R Ramos, J Lee, H Okuno, D Kalita, V Georgiev, ...
IEEE Transactions on Electron Devices 66 (5), 2346-2352, 2019
NESS: new flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors
O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ...
Applied Sciences 9 (9), 1895, 2019
A worst-case analysis of trap-assisted tunneling leakage in DRAM using a machine learning approach
J Lee, P Asenov, M Aldegunde, SM Amoroso, AR Brown, V Moroz
IEEE Electron Device Letters 42 (2), 156-159, 2020
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization
R Chen, L Chen, J Liang, Y Cheng, S Elloumi, J Lee, K Xu, VP Georgiev, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 30 (4), 432-439, 2022
Mobility of circular and elliptical Si nanowire transistors using a multi-subband 1D formalism
C Medina-Bailon, T Sadi, M Nedjalkov, H Carrillo-Nunez, J Lee, ...
IEEE Electron Device Letters 40 (10), 1571-1574, 2019
Variability study of MWCNT local interconnects considering defects and contact resistances-Part I: pristine MWCNT
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices, 2018
Progress on carbon nanotube BEOL interconnects
B Uhlig, J Liang, J Lee, R Ramos, A Dhavamani, N Nagy, J Dijon, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 937-942, 2018
DTCO launches Moore’s law over the feature scaling wall
V Moroz, XW Lin, P Asenov, D Sherlekar, M Choi, L Sponton, LS Melvin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 41.1. 1-41.1. 4, 2020
p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge-and Si-Channel Devices
W Choi, J Lee, M Shin
Electron Devices, IEEE Transactions on, 1-1, 2014
Random dopant-induced variability in Si-InAs nanowire tunnel FETs: A quantum transport simulation study
H Carrillo-Nuñez, J Lee, S Berrada, C Medina-Bailón, F Adamu-Lema, ...
IEEE Electron Device Letters 39 (9), 1473-1476, 2018
Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study
J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ...
IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ...
2017 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2017
Negative capacitance logic device, clock generator including the same and method of operating clock generator
MC Shin, JH Lee, DH Kang, JB Seo, WJ Jeong
US Patent 9,484,924, 2016
Atomistic-to circuit-level modeling of doped SWCNT for on-chip interconnects
J Liang, J Lee, S Berrada, VP Georgiev, R Pandey, R Chen, A Asenov, ...
IEEE Transactions on Nanotechnology 17 (6), 1084-1088, 2018
Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
C Medina-Bailon, H Carrillo-Nunez, J Lee, C Sampedro, JL Padilla, ...
Micromachines 11 (2), 204, 2020
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