| Estimation of threshold voltage in SiC short-channel MOSFETs K Tachiki, T Ono, T Kobayashi, H Tanaka, T Kimoto IEEE Transactions on Electron Devices 65 (7), 3077-3080, 2018 | 33 | 2018 |
| Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure H Tanaka, S Asada, T Kimoto, J Suda Journal of Applied Physics 123 (24), 2018 | 25 | 2018 |
| Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs H Tanaka, N Mori Japanese Journal of Applied Physics 59 (3), 031006, 2020 | 24 | 2020 |
| Electron mobility along< 0001> and< 11̅00> directions in 4H-SiC over a wide range of donor concentration and temperature R Ishikawa, M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Express 14 (6), 061005, 2021 | 14 | 2021 |
| Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors H Tanaka, T Kimoto, N Mori Applied Physics Express 13 (4), 041006, 2020 | 9 | 2020 |
| Phonon-limited electron mobility in rectangular cross-sectional Ge nanowires H Tanaka, S Mori, N Morioka, J Suda, T Kimoto IEEE Transactions on Electron Devices 61 (6), 1993-1998, 2014 | 9 | 2014 |
| Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Letters 120 (17), 2022 | 7 | 2022 |
| Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires H Tanaka, J Suda, T Kimoto Physical Review B 93 (15), 155303, 2016 | 6 | 2016 |
| Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires H Tanaka, S Mori, N Morioka, J Suda, T Kimoto Journal of Applied Physics 116 (23), 2014 | 6 | 2014 |
| Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes H Tanaka, T Kimoto, N Mori Journal of Applied Physics 131 (22), 2022 | 5 | 2022 |
| Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides F Hashimoto, H Tanaka, N Mori Journal of Physics D: Applied Physics 53 (25), 255107, 2020 | 5 | 2020 |
| Physics and Innovative technologies in SiC power devices T Kimoto, M Kaneko, K Tachiki, K Ito, R Ishikawa, X Chi, D Stefanakis, ... 2021 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2021 | 4 | 2021 |
| Analysis of high-field hole transport in germanium and silicon nanowires based on boltzmann's transport equation H Tanaka, J Suda, T Kimoto IEEE Transactions on Nanotechnology 16 (1), 118-125, 2016 | 4 | 2016 |
| Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model H Tanaka, J Suda, T Kimoto Solid-State Electronics 123, 143-149, 2016 | 4 | 2016 |
| Carrier trapping effects on forward characteristics of SiC pin diodes fabricated on high-purity semi-insulating substrates K Takahashi, H Tanaka, M Kaneko, T Kimoto IEEE Transactions on Electron Devices 69 (4), 1989-1994, 2022 | 3 | 2022 |
| Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the< 110> direction T Maeda, X Chi, H Tanaka, M Horita, J Suda, T Kimoto Japanese Journal of Applied Physics 58 (9), 091007, 2019 | 3 | 2019 |
| Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires H Tanaka, J Suda, T Kimoto Journal of Applied Physics 123 (2), 2018 | 3 | 2018 |
| Impacts of surface roughness scattering on hole mobility in germanium nanowires H Tanaka, J Suda, T Kimoto 2015 Silicon Nanoelectronics Workshop (SNW), 1-2, 2015 | 3 | 2015 |
| Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation H Tanaka, J Suda, T Kimoto 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 2 | 2017 |
| Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation H Tanaka, J Suda, T Kimoto Journal of Physics: Conference Series 864 (1), 012046, 2017 | 2 | 2017 |
Tsunenobu KimotoKyoto UniversityVerified email at kyoto-u.ac.jp
