ivan marri
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Many-body perturbation theory calculations using the yambo code
D Sangalli, A Ferretti, H Miranda, C Attaccalite, I Marri, E Cannuccia, ...
Journal of Physics: Condensed Matter 31 (32), 325902, 2019
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics
M Govoni, I Marri, S Ossicini
Nature Photonics 6 (10), 672-679, 2012
Engineering silicon nanocrystals: theoretical study of the effect of codoping with boron and phosphorus
F Iori, E Degoli, R Magri, I Marri, G Cantele, D Ninno, F Trani, O Pulci, ...
Physical Review B 76 (8), 085302, 2007
Silicon nanocrystallites in a matrix: Role of disorder and size
R Guerra, I Marri, R Magri, L Martin-Samos, O Pulci, E Degoli, S Ossicini
Physical Review B 79 (15), 155320, 2009
Structural, electronic, and surface properties of anatase TiO 2 nanocrystals from first principles
A Iacomino, G Cantele, D Ninno, I Marri, S Ossicini
Physical Review B 78 (7), 075405, 2008
X-ray optical activity: Applications of sum rules
J Goulon, A Rogalev, F Wilhelm, C Goulon-Ginet, P Carra, I Marri, ...
Journal of Experimental and Theoretical Physics 97, 402-431, 2003
X-ray dichroism in noncentrosymmetric crystals
P Carra, A Jerez, I Marri
Physical Review B 67 (4), 045111, 2003
Auger recombination in Si and GaAs semiconductors: Ab initio results
M Govoni, I Marri, S Ossicini
Physical Review B 84 (7), 075215, 2011
Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2 (110) interface: A first principle study
I Marri, S Ossicini
Solid state communications 147 (5-6), 205-207, 2008
Doping in silicon nanocrystals: an ab initio study of the structural, electronic and optical properties
F Iori, E Degoli, E Luppi, R Magri, I Marri, G Cantele, D Ninno, F Trani, ...
Journal of Luminescence 121 (2), 335-339, 2006
Scattering operators for E 1− E 2 x-ray resonant diffraction
I Marri, P Carra
Physical Review B 69 (11), 113101, 2004
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces
I Marri, E Degoli, S Ossicini
Progress in Surface Science 92 (4), 375-408, 2017
Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals
I Marri, M Govoni, S Ossicini
Journal of the American Chemical Society 136 (38), 13257-13266, 2014
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures
E Degoli, R Guerra, F Iori, R Magri, I Marri, O Pulci, O Bisi, S Ossicini
Comptes Rendus Physique 10 (6), 575-586, 2009
Tuning the work function of Si (100) surface by halogen absorption: A DFT study
M Bertocchi, M Amato, I Marri, S Ossicini
physica status solidi c 14 (12), 1700193, 2017
Resonant x-ray magnetic scattering from alloys
E Lidstr÷m, D Mannix, A Hiess, J Rebizant, F Wastin, GH Lander, I Marri, ...
Physical Review B 61 (2), 1375, 2000
Optical properties of silicon nanocrystallites in SiO2 matrix: Crystalline vs. amorphous case
R Guerra, I Marri, R Magri, L Martin-Samos, O Pulci, E Degoli, S Ossicini
Superlattices and Microstructures 46 (1-2), 246-252, 2009
First-principles study of silicon nanocrystals: structural and electronic properties, absorption, emission, and doping
S Ossicini, O Bisi, E Degoli, I Marri, F Iori, E Luppi, R Magri, R Poli, ...
Journal of Nanoscience and Nanotechnology 8 (2), 479-492, 2008
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes
I Marri, M Govoni, S Ossicini
Solar Energy Materials and Solar Cells 145, 162-169, 2016
Carrier multiplication in silicon nanocrystals: ab initio results
I Marri, M Govoni, S Ossicini
Beilstein journal of nanotechnology 6 (1), 343-352, 2015
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