Many-body perturbation theory calculations using the yambo code D Sangalli, A Ferretti, H Miranda, C Attaccalite, I Marri, E Cannuccia, ... Journal of Physics: Condensed Matter 31 (32), 325902, 2019 | 381 | 2019 |

Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics M Govoni, I Marri, S Ossicini Nature Photonics 6 (10), 672-679, 2012 | 142 | 2012 |

Engineering silicon nanocrystals: theoretical study of the effect of codoping with boron and phosphorus F Iori, E Degoli, R Magri, I Marri, G Cantele, D Ninno, F Trani, O Pulci, ... Physical Review B 76 (8), 085302, 2007 | 102 | 2007 |

Silicon nanocrystallites in a matrix: Role of disorder and size R Guerra, I Marri, R Magri, L Martin-Samos, O Pulci, E Degoli, S Ossicini Physical Review B 79 (15), 155320, 2009 | 73 | 2009 |

Structural, electronic, and surface properties of anatase TiO 2 nanocrystals from first principles A Iacomino, G Cantele, D Ninno, I Marri, S Ossicini Physical Review B 78 (7), 075405, 2008 | 70 | 2008 |

X-ray optical activity: Applications of sum rules J Goulon, A Rogalev, F Wilhelm, C Goulon-Ginet, P Carra, I Marri, ... Journal of Experimental and Theoretical Physics 97, 402-431, 2003 | 55 | 2003 |

X-ray dichroism in noncentrosymmetric crystals P Carra, A Jerez, I Marri Physical Review B 67 (4), 045111, 2003 | 54 | 2003 |

Auger recombination in Si and GaAs semiconductors: Ab initio results M Govoni, I Marri, S Ossicini Physical Review B 84 (7), 075215, 2011 | 52 | 2011 |

Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2 (110) interface: A first principle study I Marri, S Ossicini Solid state communications 147 (5-6), 205-207, 2008 | 43 | 2008 |

Doping in silicon nanocrystals: an ab initio study of the structural, electronic and optical properties F Iori, E Degoli, E Luppi, R Magri, I Marri, G Cantele, D Ninno, F Trani, ... Journal of Luminescence 121 (2), 335-339, 2006 | 41 | 2006 |

Scattering operators for E 1− E 2 x-ray resonant diffraction I Marri, P Carra Physical Review B 69 (11), 113101, 2004 | 40 | 2004 |

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces I Marri, E Degoli, S Ossicini Progress in Surface Science 92 (4), 375-408, 2017 | 37 | 2017 |

Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals I Marri, M Govoni, S Ossicini Journal of the American Chemical Society 136 (38), 13257-13266, 2014 | 34 | 2014 |

Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures E Degoli, R Guerra, F Iori, R Magri, I Marri, O Pulci, O Bisi, S Ossicini Comptes Rendus Physique 10 (6), 575-586, 2009 | 29 | 2009 |

Tuning the work function of Si (100) surface by halogen absorption: A DFT study M Bertocchi, M Amato, I Marri, S Ossicini physica status solidi c 14 (12), 1700193, 2017 | 27 | 2017 |

Resonant x-ray magnetic scattering from alloys E Lidström, D Mannix, A Hiess, J Rebizant, F Wastin, GH Lander, I Marri, ... Physical Review B 61 (2), 1375, 2000 | 27 | 2000 |

Optical properties of silicon nanocrystallites in SiO2 matrix: Crystalline vs. amorphous case R Guerra, I Marri, R Magri, L Martin-Samos, O Pulci, E Degoli, S Ossicini Superlattices and Microstructures 46 (1-2), 246-252, 2009 | 24 | 2009 |

First-principles study of silicon nanocrystals: structural and electronic properties, absorption, emission, and doping S Ossicini, O Bisi, E Degoli, I Marri, F Iori, E Luppi, R Magri, R Poli, ... Journal of Nanoscience and Nanotechnology 8 (2), 479-492, 2008 | 24 | 2008 |

First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes I Marri, M Govoni, S Ossicini Solar Energy Materials and Solar Cells 145, 162-169, 2016 | 20 | 2016 |

Carrier multiplication in silicon nanocrystals: ab initio results I Marri, M Govoni, S Ossicini Beilstein journal of nanotechnology 6 (1), 343-352, 2015 | 20 | 2015 |